Intersil Corporation HRF3205, HRF3205S Datasheet

HRF3205, HRF3205S

Data Sheet June 1999 File Number

100A, 55V, 0.008 Ohm, N-Channel, Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.

Ordering Information

PART NUMBER PACKAGE BRAND

HRF3205 TO-220AB HRF3205
HRF3205S TO-263AB HRF3205S

NOTE: Whenordering, use the entire part number.AddthesuffixT
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.

Features

• 100A, 55V (See Note)

• Low On-Resistance, r

• Temperature Compensating PSPICE

DS(ON)

= 0.008Ω

®

Model

• Thermal Impedance SPICE Model

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

4447.4

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN
(FLANGE)

4-29

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HRF3205, HRF3205S

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

= 25oC, Unless Othewise Specified

C

DSS

DGR

GS

55 V
55 V

±20V V

Drain Current

Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

100
390

Figure 10

175

1.17

-55 to 175

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V 55 - - V

= VDS, ID = 250µA2-4V
VDS = 55V, VGS = 0V - - 25 µA
VDS = 44V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I
Breakdown Voltage Temperature

∆V

(BR)DSS

Coefficient
Drain to Source On Resistance r
Turn-On Delay Time t

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Source Inductance L

Internal Drain Inductance L

GSS

∆T

ISS
OSS
RSS

VGS = ±20V - - 100 nA

/

Reference to 25oC, ID = 250µA - 0.057 - V

J

= 59A, VGS = 10V (Figure 4) - 0.0065 0.008 Ω

VDD = 28V, ID≅ 59A,
RL = 0.47Ω, VGS= 10V,

r

RGS = 2.5Ω

-14 - ns

- 100 - ns

-43 - ns

f

VDD = 44V, ID≅ 59A,

g

VGS = 10V, I

gs

(Figure 6)

gd

VDS = 25V, VGS = 0V,
f = 1MHz (Figure 5)

g(REF)

= 3mA

-70 - ns

- - 170 nC

- - 32 nC

- - 74 nC

- 4000 - pF

- 1300 - pF

- 480 - pF

Measured From the Contact

S

Screw on Tab to Center of Die
Measured From the Drain

Lead, 6mm (0.25in) From
Package to Center of Die

Measured From the Source

D

Modified MOSFET
Symbol Showing the
Internal Devices In­ductances

D

L

D

- 7.5 - nH

- 4.5 - nH

Lead, 6mm (0.25in) From Head-

G

L

S

S

- - 0.85

o
o
o

C/W
C/W
C/W

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient

er to Source Bonding Pad

θJC

R

θJA

TO-220 - - 62
TO-263 (PCB Mount, Steady State) - - 40

4-30

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

Pulsed Source to Drain Current (Note 2) I

HRF3205, HRF3205S

SD

SDM

MOSFET
Symbol Showing
The Integral
Reverse P-N
Junction Diode

D

- - 100
(Note 1

A

- - 390 A

G

S

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

SD

RR

ISD = 59A (Note 4) - - 1.3 V
ISD = 59A, dISD/dt = 100A/µs (Note 4) - 110 170 ns

rr

ISD = 59A, dISD/dt = 100A/µs (Note 4) - 450 680 nC

NOTE:

2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)

Typical Performance Curves

1000

VGSIN DECENDING ORDER

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

100

4.5V

, DRAIN TO SOURCE CURRENT (A)

D

I

10

0.1 1.0 10 100
, DRAIN TO SOURCE VOLTAGE (V)

V

DS

20µs PULSE WIDTH

= 25oC

T

C

FIGURE 1. OUTPUT CHARACTERISTICS FIGURE 2. OUTPUT CHARACTERISTICS

1000

100

, DRAIN TO SOURCE CURRENT (A)

D

I

10

0.1 1 10 100

V

IN DECENDING ORDER

GS

15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

20µs PULSE WIDTH

T

= 175oC

C

1000

TJ = 25oC

100

10

, DRAIN TO SOURCE CURRENT(A)

D

I

1

3 4.5 6 7.5 9

TJ = 175oC

V

= 25V

DS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS, GATE TO SOURCE VOLTAGE (V)

2.5
ID = 98A, VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 3. TRANSFER CHARACTERISTICS FIGURE 4. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4-31