Intersil Corporation HP4410DY Datasheet

HP4410DY

Data Sheet August 1999 File Number

10A, 30V, 0.0135 Ohm, Single N-Channel,
Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative
process. This advanced process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Ordering Information

PART NUMBER PACKAGE BRAND

HP4410DY SO-8 P4410DY

NOTE: When ordering, use the entire part number.Add the suffix T
to obtain the variant in tape and reel, e.g., HP4410DYT.

Features

• Logic Level Gate Drive

• 10A, 30V

•r

•r

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

= 0.0135Ω at ID = 10A, VGS = 10V

DS(ON)

= 0.020Ω at ID = 8A, VGS = 4.5V

DS(ON)

Components to PC Boards”

Symbol

SOURCE(1)

SOURCE(2)

SOURCE(3)

DRAIN(8)

DRAIN(7)

DRAIN(6)

4468.4

Packaging

SO-8

GATE(4)

DRAIN(5)

8-3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HP4410DY

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

HP4410DY UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (10µs Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

10
50

2.5

0.02

-55 to 150

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TA = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V 30 - - V

= VDS, ID = 250µA (Figure 9) 1 - - V
VDS = 30V, VGS = 0V - - 1 µA
VDS = 30V, VGS = 0V, TA = 55oC--25µA

Gate to Source Leakage Current I
Drain to Source On Resistance r

GSS

DS(ON)ID

VGS = ±16V - - 100 nA

= 8A, VGS = 4.5V (Figures 6, 8) - 0.015 0.020 Ω

ID = 10A, VGS = 10V (Figures 6, 8) - 0.011 0.0135 Ω

Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VDS

Gate to Source Charge Q
Gate to Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

ISS
OSS
RSS

θJA

VDD = 25V, ID≅ 1A,

r

f

RL = 25Ω, V
RGS = 6Ω

GEN

= 15V, VGS = 10V, ID≅ 10A - 35 60 nC

gs

gd

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 4)

Pulse Width < 10s (Figure 11)

= 10V,

-1530ns

- 9 20 ns

- 70 100 ns

-2080ns

- 7.5 - nC

- 5.8 - nC

- 1600 - pF

- 685 - pF

- 115 - pF

--50oC/W

Device Mounted on FR-4 Material

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

8-4

SD

rr

ISD = 2.3A (Figure 7) - 0.75 1.1 V
ISD = 2.3A, dISD/dt = 100A/µs - 50 80 ns