Intersil Corporation HM-65262-883 Datasheet

March 1997

HM-65262/883

16K x 1 Asynchronous

CMOS Static RAM

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max

• Low Standby Current. . . . . . . . . . . . . . . . . . . .50

• Low Operating Current . . . . . . . . . . . . . . . . . 50mA Max

• Data Retention at 2.0V. . . . . . . . . . . . . . . . . . .20µA Max

• TTL Compatible Inputs and Outputs

µA Max

Description

The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­dom Access Memory manufactured using the Intersil
Advanced SAJI V process. The device utilizes asynchro­nous circuit design for fast cycle times and ease of use.
The HM-65262/883 is available in both JEDEC Standard 20
pin, 0.300 inch wide CERDIP and 20 pad CLCC packages,
providing high board-level packing density. Gated inputs
lower standby current, and also eliminate the need for pull­up or pull-down resistors.

The HM-65262/883, a full CMOS RAM, utilizes an array of
six transistor (6T) memory cells for the most stable and

• JEDEC Approved Pinout

• No Clocks or Strobes Required

o

• Temperature Range. . . . . . . . . . . . . . . +55

C to +125oC

• Gated Inputs-No Pull-Up or Pull-Down Resistors
Required

lowest possible standby supply current over the full military
temperature range. In addition to this, the high stability of
the 6T RAM cell provides excellent protection against soft
errors due to noise and alpha particles. This stability also
improves the radiation tolerance of the RAM over that of
four transistor (4T) devices.

• Equal Cycle and Access Time

• Single 5V Supply

Ordering Information

70ns/20µA 85ns/20µA 85ns/400µA TEMP. RANGE PACKAGE PKG. NO.

- HM1-65262/883 - -55oC to +125oC CERDIP F20.3

HM4-65262B/883 HM4-65262/883 - -55oC to +125oC CLCC J20.C

Pinouts

HM1-65262/883 (CERDIP)

TOP VIEW

1

A0
A1

2

A2

3

A3

4

A4

5

A5

6

A6

7
8

Q

9

W

10

GND

VCC

20

A13

19

A12

18

A11

17

A10

16

A9

15

A8

14

A7

13
12

D

11

E

HM-65262 (CLCC)

TOP VIEW

A1A2VCC

220119

3

A3

4

A4

5

A5

6

A6

7

Q

8

9101112

W

A0

GND

A13

18

A12
A11

17

A10

16

A9

15

A8

14

A7

13

E

D

A0 - A13 Address Input

E Chip Enable/Power Down
Q Data Out
D Data In

VSS/GND Ground

VCC Power (+5)

W Write Enable

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

6-204

File Number 3003.2

Functional Diagram

HM-65262/883

A0
A1
A2
A3
A4

A12
A13

A

ROW

ADDRESS

BUFFER

D

E

W

7

DECODER
(1 OF 128)

A

7

ROW

MEMORY ARRAY

128

128 X 128

128

COLUMN DECODER

(1 OF 128)

AND I / O CIRCUITRY

A

A

7

COLUMN

ADDRESS BUFFERS

A7A6A8

A9

A10

A11

Q

7

A5

6-205

HM-65262/883

Absolute Maximum Ratings Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V

Input or Output Voltage Applied for all Grades . . . . . -0.3V to VCC +0.3V

Typical Derating Factor. . . . . . . . . . . . . . . .5mA/MHz Increase in ICCOP

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 1

Thermal Resistance (Typical) θ

CERDIP Package. . . . . . . . . . . . . . . . . . 66oC/W 13oC/W

CLCC Package. . . . . . . . . . . . . . . . . . . . 75

Maximum Storage Temperature Range. . . . . . . . . . . . .-65

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +175

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . +300

JA

o

C/W 18oC/W

Die Characteristics

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26256 Gates

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . . . . .±2.2V to VCC

Data Retention Supply Voltage. . . . . . . . . . . . . . . . . . . 2.0V to 4.5V

Input Rise and Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . .40ns Max.

θ

JC

o

C to +150oC

o
o

C
C

Device Guaranteed and 100% Tested

DC PARAMETER SYMBOL

High Level Output Voltage VOH1 VCC = 4.5V, IO = -4.0mA 1, 2, 3 -55oC ≤ TA≤ +125oC 2.4 - V
Low Level Output Voltage VOL VCC = 4.5V, IO = 8.0mA 1, 2, 3 -55
High Impedance Output

Leakage Current
Input Leakage Current II VCC = 5.5V, VI = GND or VCC 1, 2, 3 -55oC ≤ TA≤ +125oC -1.0 1.0 µA
Standby Supply Current ICCSB1 VCC = 5.5V, IO = 0mA,

Standby Supply Current ICCSB VCC = 5.5V, IO = 0mA, E = 2.2V 1, 2, 3 -55oC ≤ TA≤ +125oC- 5 mA
Operating Supply

Current
Data Retention Supply

Current
Enable Supply Current ICCEN VCC = 5.5V, IO = 0mA, E = 0.8V 1, 2, 3 -55oC ≤ TA≤ +125oC - 50 mA
Functional Test FT VCC = 4.5V (Note 3) 7, 8A, 8B -55

IOZ VCC = 5.5V,

or VCC

-0.3V

ICCOP VCC = 5.5V, (Note 2), f = 1MHz,

= 0.8V

ICCDR VCC = 2.0V, IO = 0mA,E = VCC

-0.3V

(NOTE 1)

CONDITIONS

E = 5.5V, VO = GND

E = VCC

GROUP A

SUB-GROUPS TEMPERATURE MIN MAX UNITS

o

C ≤ TA≤ +125oC - 0.4 V

1, 2, 3 -55oC ≤ TA≤ +125oC -1.0 1.0 µA

1, 2, 3 -55oC ≤ TA≤ +125oC- 50 µA

E

1, 2, 3 -55oC ≤ TA≤ +125oC - 50 mA

1, 2, 3 -55oC ≤ TA≤ +125oC- 20 µA

o

C ≤ TA≤ +125oC- - -

NOTES:

1. All voltages referenced to device GND.

2. Typical derating 1.5mA/MHz increase in ICCOP.

3. Tested as follows: f = 2MHz, VIH = 2.4V, VIL = 0.4V, IOH = -4.0mA, IOL = 4.0mA, VOH ≥ 1.5V, and VOL ≤ 1.5V.

TABLE 1. HM-65262/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS

Device Guaranteed and 100% Tested

AC PARAMETER SYMBOL

TABLE 2. HM-65262/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS

Read/Write/Cycle
Time

Address Access
Time

(1) TAVAX VCC = 4.5V and 5.5V 9, 10, 11 -55oC ≤ TA≤ +125oC 70 - 85 - ns

(2) TAVQV VCC = 4.5V and 5.5V 9, 10, 11 -55oC ≤ TA≤ +125oC - 70 - 85 ns

(NOTES 1, 2)

CONDITIONS

GROUP A

SUB-

GROUPS TEMPERATURE

6-206

HM-

65262B/883

LIMITS

HM-65262/883

LIMITS

UNITSMIN MAX MIN MAX