Intersil Corporation HM-65162-883 Datasheet

March 1997

HM-65162/883

2K x 8 Asynchronous

CMOS Static RAM

Features

• This Circuit is Processed in Accordance to MIL-STD­883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.

• Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max

• Low Standby Current. . . . . . . . . . . . . . . . . . . .50µA Max

• Low Operating Current . . . . . . . . . . . . . . . . . 70mA Max

• Data Retention at 2.0V. . . . . . . . . . . . . . . . . . .20µA Max

• TTL Compatible Inputs and Outputs

• JEDEC Approved Pinout (2716, 6116 Type)

• No Clocks or Strobes Required

o

• Wide Temperature Range . . . . . . . . . . -55

C to +125oC

Description

The HM-65162/883 is a CMOS 2048 x 8 Static Random
Access Memory manufactured using the Intersil Advanced
SAJI V process. The device utilizes asynchronous circuit
design for fast cycle time and ease of use. The pinout is the
JEDEC 24 pin DIP, and 32 pad 8-bit wide standard which
allows easy memory board layouts flexible to accommodate
a variety of industry standard PROMs, RAMs, ROMs and
EPROMs. The HM-65162/883 is ideally suited for use in
microprocessor based systems with its 8-bit word length
organization. The convenient output enable also simplifies
the bus interface by allowing the data outputs to be
controlled independent of the chip enable. Gated inputs
lower operating current and also eliminate the need for pull­up or pull-down resistors.

• Equal Cycle and Access Time

• Single 5V Supply

• Gated Inputs

- No Pull-Up or Pull-Down Resistors Required

Ordering Information

70ns/20µA 90ns/40µA 90ns/300µA TEMP. RANGE PACKAGE PKG. NO.

HM1-65162B/883 HM1-65162/883 HM1-65162C/883 -55oC to 125oC CERDIP F24.6
HM4-65162B/883 HM4-65162/883 - -55oC to 125oC CLCC J32.A

Pinouts

HM-65162/883 (CERDIP)

TOP VIEW

A7

1

A6

2

A5

3

A4

4

A3

5

A2

6

A1

7

A0

8

DQ0

9

DQ1

10

DQ2

11

GND

12

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

24

VCC

23

A8

22

A9

21

W

20

G

19

A10

18

E

17

DQ7

16

DQ6

15

DQ5

14

DQ4

13

DQ3

A6
A5

A4
A3
A2
A1
A0

NC

DQ0

| Copyright © Intersil Corporation 1999

HM-65162/883 (CLCC)

TOP VIEW

NC

A7

4 32 31 30

5
6

7
8

9
10
11
12
13

14

NC

NC

3 2

16 17 18 19 20

15

DQ1

DQ2

GND

1

NC

6-188

VCC

DQ3

NC

DQ4

NC

DQ5

29

A8

28

A9

27

NC

26

W

25

G

24

A10

23

E

22

DQ7

21

DQ6

PIN DESCRIPTION

NC No Connect

A0 - A10 Address Input

E Chip Enable/Power Down

VSS/GND Ground

DQ0 - DQ7 Data In/Data Out

VCC Power (+5V)

W Write Enable

G Output Enable

File Number 3001.1

Functional Diagram

HM-65162/883

A1
A2

A3
A4
A5
A6
A7

A

ROW

ADDRESS

BUFFER

E

G

W

7

A

7

ROW

DECODER

128

MEMORY ARRAY

COLUMN DECODER

INPUT / OUTPUT (X8)

4

ADDRESS BUFFER

A0 A8 A9 A10

128 X 128

128

AND DATA

A

COLUMN

1 OF 8

DQ0
THRU

8

DQ7

4

A

6-189

HM-65162/883

Absolute Maximum Ratings Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V

Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V

Typical Derating Factor . . . . . . . . . .1.5mA/MHz Increase in ICCOP

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

CAUTION: Stresses abov e those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating
and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Operating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Range . . . . . . . . . . . . . . . .-55oC to +125oC

Input Low Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V

Chip Enable High/Low Time. . . . . . . . . . . . . . . . . . . . . . . 40ns (Min)

TABLE 1. 65162/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS

Device Guaranteed and 100% Tested

(NOTE 1)

PARAMETER SYMBOL

High Level Out­put Voltage

Low Level Output
Voltage

High Impedance
Output Leakage
Current

Input Leakage
Current

Standby Supply
Current

Standby Supply
Current

Operating Supply
Current

Enable Supply
Current

Data Retention
Supply Current

Functional Test FT VCC = 4.5V (Note 3) 7, 8A, 8B -55
NOTES:

1. All voltages referenced to device GND.

2. Input pulse levels: 0.8V to VCC - 2.0V; Input rise and fall times: 5ns (max); Input and output timing reference level: 1.5V; Output load: 1
TTL gate equivalent, CL = 50pF (min) - for CL greater than 50pF, access time by 0.15ns per pF.

3. TAVQV = TELQV + TAVEL.

VOH1 VCC = 4.5V, IO = -1.0mA 1, 2, 3 -55

VOL VCC = 4.5V, IO = 4.0mA 1, 2, 3 -55

IIOZ VCC = 5.5V,

E = 2.2V, VI/O = GND or VCC

II VCC = 5.5V,

VI = GND or VCC

ICCSB1 HM-65162B/883, IO = 0mA,

VCC = 5.5V,
HM-65162/883, IO = 0mA,

VCC = 5.5V,
HM-65162C/883, IO = 0mA,

VCC = 5.5V,

ICCSB VCC = 5.5V, IO = 0mA,

E = 2.2V

ICCOP VCC = 5.5V,

(Note 2), f = 1MHz, E = 0.8V

ICCEN VCC = 5.5V, IO = 0mA,

E = 0.8V

ICCDR HM-65162B/883, IO = 0mA,

VCC = 2.0V,
HM-65162/883, IO = 0mA,

VCC = 2.0V,
HM-65162C/883, IO = 0mA,

VCC = 2.0V,

CONDITIONS

G = 2.2V, or

E = VCC -0.3V

E = VCC - 0.3V

E = VCC - 0.3V

G = 5.5V,

E = VCC - 0.3V

E = VCC - 0.3V

E = VCC - 0.3V

Thermal Resistance θ

CERDIP Package . . . . . . . . . . . . . . . . 48oC/W 8oC/W

CLCC Package . . . . . . . . . . . . . . . . . . 66oC/W 12oC/W

Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC

Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC

Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC

JA

θ

JC

Die Characteristics

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26000 Gates

Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.2V to VCC

Data Retention Supply Voltage. . . . . . . . . . . . . . . . . . . 2.0V to 4.5V

Input Rise and Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max

GROUP A

SUBGROUPS TEMPERATURE

o

C ≤ TA≤ +125oC 2.4 - V

o

C ≤ TA≤ +125oC - 0.4 V

1, 2, 3 -55oC ≤ TA≤ +125oC -1.0 1.0 µA

o

1, 2, 3 -55

1, 2, 3 -55oC ≤ TA≤ +125oC - 50 µA

1, 2, 3 -55oC ≤ TA≤ +125oC - 100 µA

1, 2, 3 -55oC ≤ TA≤ +125oC - 900 µA

1, 2, 3 -55oC ≤ TA≤ +125oC- 8 mA

1, 2, 3 -55oC ≤ TA≤ +125oC - 70 mA

1, 2, 3 -55oC ≤ TA≤ +125oC - 70 mA

1, 2, 3 -55oC ≤ TA≤ +125oC- 20µA

1, 2, 3 -55oC ≤ TA≤ +125oC- 40µA

1, 2, 3 -55oC ≤ TA≤ +125oC - 300 µA

C ≤ TA≤ +125oC -1.0 1.0 µA

o

C ≤ TA≤ +125oC- - -

LIMITS

UNITSMIN MAX

6-190