intersil HIP6601A DATA SHEET

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Data Sheet August 2004
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HIP6601A, HIP6603A, HIP6604
FN4884.5
The HIP6601A, HIP6603A and HIP6604 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with a HIP63xx or an ISL65xx Multi-Phase Buck PWM controller form a complete core-voltage regulator solution for advanced microprocessors.
The HIP6601A drives the lower gate in a synchronous rectifier to 12V, while the upper gate can be independently driven over a range from 5V to 12V. The HIP6603A drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses. The HIP6604 can be configured as either a HIP6601A or a HIP6603A.
The output drivers in the HIP6601A, HIP6603A and HIP6604 have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. These products implement bootstrapping on the upper gate with only an external capacitor required. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Lead SOIC and EPSOIC and 16 Lead QFN Packages
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Output Stage Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD® Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)”
Pinouts
HIP6601ACB, HIP6603ACB (SOIC)
HIP6601ECB, HIP6603ECB (EPSOIC)
TOP VIEW
Ordering Information
TEMP. RANGE
o
PART NUMBER
HIP6601ACB 0 to 85 8 Ld SOIC M8.15 HIP6603ACB 0 to 85 8 Ld SOIC M8.15 HIP6601ACB-T 8 Ld SOIC Tape and Reel HIP6603ACB-T 8 Ld SOIC Tape and Reel HIP6601ECB 0 to 85 8 Ld EPSOIC M8.15B HIP6603ECB 0 to 85 8 Ld EPSOIC M8.15B HIP6601ECB-T 8 Ld EPSOIC Tape and Reel HIP6603ECB-T 8 Ld EPSOIC Tape and Reel HIP6604CR 0 to 85 HIP6604CR-T 16 Ld 4x4 QFN Tape and Reel
(
C) PACKAGE
16 Ld 4x4 QFN
1
PKG.
DWG. #
L16.4x4
UGATE
NC
BOOT
PWM
GND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003, 2004. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
BOOT
PWM
GND
1
2
3
4
1 2 3 4
HIP6604 (QFN)
TOP VIEW
UGATENCPHASE
15
16 14 13
6578
NC
PGND
LGATE
8 7 6 5
NC
NC
PHASE PVCC VCC LGATE
12
NC
PVCC
11
10
LVCC
9
VCC
ti
Block Diagrams
HIP6601A, HIP6603A, HIP6604
HIP6601A AND HIP6603A
PVCC
VCC
PWM
GND
PVCC
VCC
PWM
+5V
10K
10K
+5V
10K
10K
CONTROL
LOGIC
CONTROL
LOGIC
PROTECTION
PAD
SHOOT-
THROUGH
PROTECTION
BOOT
UGATE
SHOOT-
THROUGH
FOR HIP6601ECB AND HIP6603ECB DEVICES, THE PAD ON THE BOTTOM SIDE OF THE PACKAGE MUST BE SOLDERED TO THE PC BOARD.
PHASE
LGATE
GND
VCC FOR HIP6601A
PVCC FOR HIP6603A
HIP6604 QFN PACKAGE
BOOT
UGATE
PHASE
CONNECT LVCC TO VCC FOR HIP6601A CONFIGURATION
LVCC
CONNECT LVCC TO PVCC FOR HIP6603A CONFIGURATION.
LGATE
PGND
PAD
PAD ON THE BOTTOM SIDE OF THE PACKAGE MUST BE SOLDERED TO THE PC BOARD
2
HIP6601A, HIP6603A, HIP6604
Typical Application - 3 Channel Converter Using HIP6301 and HIP6601A Gate Drivers
+12V
+5V
BOOT
VCC
PWM
PVCC
DRIVE
HIP6601A
UGATE
PHASE
LGATE
+12V
PGOOD
VID
VFB
VSEN
FS
+5V
VCC
MAIN
CONTROL
HIP6301
GND
COMP
PWM1 PWM2 PWM3
ISEN1 ISEN2 ISEN3
VCC PWM
VCC
PWM
+5V
PVCC
DRIVE
HIP6601A
+5V
PVCC
DRIVE
HIP6601A
BOOT
UGATE
PHASE
LGATE
BOOT
UGATE
PHASE
LGATE
+12V
+V
CORE
3
HIP6601A, HIP6603A, HIP6604
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V Input Voltage (V
UGATE. . . . . . .V
. . . . . . . . . . . V
LGATE. . . . . . . . . GND - 5V(<400ns pulse width) to V
. . . . . . . . . . . . . . GND - 3.0V(>400ns pulse width) to V
PHASE. . . . . . . . . . . . . . . . . .GND - 5V(<400ns pulse width) to 15V
- V
BOOT
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
PWM
- 5V(<400ns pulse width) to V
PHASE
- 3.0V(>400ns pulse width) to V
PHASE
) . . . . . . . . . . . . . . . . . . . . . . .15V
PHASE
BOOT BOOT PVCC PVCC
+ 0.3V + 0.3V + 0.3V + 0.3V
. . . . . . . . . . . . . . . . . . . . . . GND - 0.3V(>400ns pulse width) to 15V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . .200V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ “case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Bias Supply Current I
Upper Gate Bias Current I
VCC
PVCC
POWER-ON RESET
VCC Rising Threshold 9.7 9.95 10.4 V VCC Falling Threshold 9.0 9.2 9.5 V
PWM INPUT
Input Current I
PWM
PWM Rising Threshold 3.45 3.6 - V PWM Falling Threshold - 1.45 1.55 V UGATE Rise Time t LGATE Rise Time t UGATE Fall Time t LGATE Fall Time t UGATE Turn-Off Propagation Delay t LGATE Turn-Off Propagation Delay t
RUGATEVPVCC
RLGATEVPVCC FUGATEVPVCC
FLGATE PDLUGATEVPVCC PDLLGATEVPVCC
Shutdown Window 1.4 - 3.6 V Shutdown Holdoff Time - 230 - ns
OUTPUT
Upper Drive Source Impedance R
Upper Drive Sink Impedance R
Lower Drive Source Current I
Lower Drive Sink Impedance R
UGATEVPVCC
UGATEVPVCC
LGATE
LGATE
HIP6601A, f HIP6603A, f HIP6601A, f HIP6603A, f
V
= 0 or 5V (See Block Diagram) - 500 - µA
PWM
= 12V, 3nF Load - 20 - ns = 12V, 3nF Load - 50 - ns = 12V, 3nF Load - 20 - ns
V
= 12V, 3nF Load - 20 - ns
PVCC
= 12V, 3nF Load - 30 - ns = 12V, 3nF Load - 20 - ns
= 5V - 1.7 3.0
V
= 12V - 3.0 5.0
PVCC
= 5V - 2.3 4.0
V
= 12V - 1.1 2.0
PVCC
V
= 5V, HIP6603A 400 580 - mA
PVCC
V
= 12V, HIP6603A 500 730 - mA
PVCC
V
= 5V or 12V, HIP6601A 500 730 - mA
PVCC
V
= 5V or 12V - 1.6 4.0
PVCC
Thermal Resistance θJA (oC/W) θJC (oC/W) SOIC Package (Note 1) 97 N/A
EPSOIC Package (Note 2). . . . . . . . . . 38 N/A
QFN Package (Note 2). . . . . . . . . . . . . 48 10
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only) For Recommended soldering conditions see Tech Brief TB389.
Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . 0oC to 85oC
Maximum Operating Junction Temperature . . . . . . . . . . . . . 125oC
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V ±10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
PWM PWM PWM PWM
= 1MHz, V = 1MHz, V = 1MHz, V = 1MHz, V
= 12V - 4.4 6.2 mA
PVCC
= 12V - 2.5 3.6 mA
PVCC
= 12V - 200 430 µA
PVCC
= 12V - 1.8 3.3 mA
PVCC
JC,
the
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