Intersil Corporation HIP6601 Datasheet

HIP6601, HIP6603
Data Sheet January 2000
Synchronous-Rectified Buck MOSFET Drivers
The HIP6601 and HIP6603 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP630x Multi-Phase Buck PWM controller and Intersil UltraFETs™ form a complete core-voltage regulator solution for advanced microprocessors.
The HIP6601 drivesthe lower gate in a synchronous-rectifier bridge to 12V, while the upper gate can be independently driven over a range from 5V to 12V. The HIP6603 drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses.
The output drivers in the HIP6601 and HIP6603 have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. Both products implement bootstrapping on the upper gate with only an external capacitor required. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
File Number 4819
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
- Fast Output Rise Time
- Propagation Delay 30ns
• Small 8 Lead SOIC Package
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD® Athlon™ Microprocessors
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Pinout
HIP6601CB/HIP6603CB
(SOIC)
TOP VIEW
Ordering Information
TEMP. RANGE
PART NUMBER
HIP6601CB 0 to 85 8 Ld SOIC M8.15 HIP6603CB 0 to 85 8 Ld SOIC M8.15
(oC) PACKAGE PKG. NO.
Block Diagram
PVCC
VCC
+5V
10K
PWM
CONTROL
LOGIC
10K
SHOOT-
THROUGH
PROTECTION
UGATE
BOOT
PWM
GND
BOOT
UGATE
PHASE
1 2 3 4
8 7 6 5
PHASE PVCC VCC LGATE
VCC FOR HIP6601
PVCC FOR HIP6603
LGATE
GND
1
UltraFET™ is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143
Pentium® is a registered trademark of Intel Corporation. AMD® is a registered trademark of Advanced Micro Devices, Inc.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
| Copyright © Intersil Corporation 2000
Typical Application
HIP6601, HIP6603
+5V
BOOT
VCC
PWM
PVCC
DRIVE
HIP6601
UGATE
PHASE
LGATE
+12V
+12V
PGOOD
VID
VFB
VSEN
FS
+5V
VCC
MAIN
CONTROL
HIP6301
GND
COMP
PWM1 PWM2 PWM3
ISEN1 ISEN2 ISEN3
VCC PWM
VCC
PWM
+5V
PVCC
DRIVE
HIP6601
+5V
PVCC
DRIVE
HIP6601
BOOT
UGATE
PHASE
LGATE
BOOT
UGATE
PHASE
LGATE
+VCORE
+12V
2
HIP6601, HIP6603
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V Input Voltage (V
UGATE. . . . . . . . . . . . . . . . . . . . . .V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to V
- V
BOOT
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
PWM
). . . . . . . . . . . . . . . . . . . . . . . .15V
PHASE
- 0.3V to V
PHASE
BOOT PVCC
+ 0.3V + 0.3V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3015.7). . . . .3kV
Machine Model (Per EIAJ ED-4701 Method C-111). . . . . . . .200V
Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . .0oC to 85oC
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125oC
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V ±10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . . . . . . 5V to 12V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Bias Supply Current I
Power Supply Current I
VCC
PVCC
POWER-ON RESET
VCC Rising Threshold 9.7 9.9 10.0 V VCC Falling Threshold 9.0 9.1 9.2 V
PWM INPUT
Input Current I
PWM
PWM Rising Threshold 3.6 3.7 - V PWM Falling Threshold - 1.3 1.4 V UGATE Rise Time TR LGATE Rise Time TR UGATE Fall Time TF LGATE Fall Time TF UGATE Turn-Off Propagation Delay TPDL LGATE Turn-Off Propagation Delay TPDL
UGATEVPVCC
LGATEVPVCC
UGATEVPVCC
LGATEVPVCC
UGATEVVCC LGATEVVCC
Shutdown Window 1.5 - 3.6 V Shutdown Holdoff Time - 230 - ns
OUTPUT
Upper Drive Source Impedance R
Upper Drive Sink Impedance R
Lower Drive Source Impedance R
Lower Drive Sink Impedance R
UGATEVVCC
UGATEVVCC
LGATE
LGATE
HIP6601, f HIP6603, f HIP6601, f HIP6603, f
V
= 0 or 5V (See Block Diagram) - 500 - µA
PWM
= V = V = V
= V = V = V
= 12V, V
V
= V
VCC
= 12V, V
V
= 12V, V
VCC
V
= 12V, V
VCC
V
= 12V, V
VCC
V
= V
VCC
Thermal Resistance θJA (oC/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
= 1MHz, V
PWM
= 1MHz, V
PWM
= 1MHz, V
PWM
= 1MHz, V
PWM
= 12V, 3nF load - 20 - ns
VCC
= 12V, 3nF load - 50 - ns
VCC
= 12V, 3nF load - 20 - ns
VCC
= 12V, 3nF load - 20 - ns
VCC
= 12V, 3nF load - 30 - ns
PVCC
= 12V, 3nF load - 20 - ns
PVCC
= 5V - 2.5 3.0
PVCC
= 12V - 7.0 7.5
PVCC
= 5V - 2.3 2.8
PVCC
= 12V - 1.0 1.3
PVCC
= 5V - 4.5 5.0
PVCC
= 12V - 9.0 9.5
PVCC
= 12V - 1.5 2.9
PVCC
= 12V - 4.4 6.2 mA
PVCC
= 12V - 2.5 3.6 mA
PVCC
= 12V - 200 430 µA
PVCC
= 12V - 1.8 3.3 mA
PVCC
3
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