intersil HIP6521 DATA SHEET

TM
HIP6521
Data Sheet August 2000
PWM and Triple Linear Power Controller
The HIP6521 provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates a voltage­mode PWMcontroller and three linear controllers, as well as monitoring and protection functions into a 16-lead SOIC package. The PWM controller is intended to regulate the microprocessor memory core voltage with a synchronous­rectified buck converter. The linear controllers are intended to regulate the computer system’s AGP 1.5V bus power,the
2.5V clock power, and the 1.8V power for the North/South Bridge core voltage and/or cache memory circuits. Both the switching regulator and linear voltage references provide ±2% of static regulation over line, load, and temperature ranges. All outputs are user-adjustable by means of an external resistor divider. All linear controllers employ bipolar NPNs for the pass transistors.
The HIP6521 monitors all the output voltages. The PWM controller’s adjustable overcurrent function monitors the output current by using the voltage drop across the upper MOSFET’s r
. The linear regulator outputs are
DS(ON)
monitored via the FB pins for undervoltage events.
Ordering Information
PKG.
PART NUMBER TEMP. RANGE (oC) PACKAGE
HIP6521CB 0 to 70 16 Ld SOIC M16.15 HIP6521EVAL1 Evaluation Board
NO.
Applications
Motherboard Power Regulation for Computers
File Number 4837.1
Features
• Provides 4 Regulated Voltages
- Memory Core, AGP, Clock, and Memory Controller Hub Power
• ACPI Compatible
• Drives Bipolar Linear Pass Transistors
• Externally Resistor-Adjustable Outputs
• Simple Single-Loop Control Design
- Voltage-Mode PWM Control
• Fast PWM Converter Transient Response
- High-Bandwidth Error Amplifier
- Full 0% to 100% Duty Ratio
• Excellent Output Voltage Regulation
- All Outputs: ±2% Over Temperature
• Overcurrent Fault Monitors
- Switching Regulator Does Not Require Extra Current Sensing Element, Uses MOSFET’s r
DS(ON)
• Small Converter Size
- 300kHz Constant Frequency Operation
- Small External Component Count
Related Literature
• Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)”
Pinout
HIP6521 (SOIC)
TOP VIEW
16 15 14 13 12 11 10
9
FB3 DRIVE3 FB4 DRIVE4 OCSET VCC LGATE PGND
DRIVE2
FB2
FB
COMP
GND
PHASE
BOOT
1 2 3 4 5 6 7 8UGATE
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Block Diagram
VCC
VCC
FB3
OCSET
2
DRIVE3
DRIVE4
FB4
DRIVE2
FB2
EA3
-
+
EA4
+
-
0.8V
INHIBIT/SOFT-START
+
-
EA2
-
+
x 0.70
+
UV3
+
-
UV4
40µA
-
SOFT-
START
AND FAULT
+
-
UV2
LOGIC
+
-
EA1
+
-
COMP1
OCC
+
+
-
-
PWM
POWER-ON
RESET (POR)
HIP6521
BOOT
DRIVE1
UGATE
PHASE
GATE
CONTROL
VCC
GND
OSCILLATOR
FB
COMP
SYNC
DRIVE
LGATE
PGND
Simplified Power System Diagram
HIP6521
+5VSB (+5V
+5V
+3.3V
DUAL
DUAL
)
IN
Typical Application
+5V
SB
+5V
DUAL
L
IN
V
V
OUT3
OUT2
C
IN
Q1
Q3
+
Q4
+
+
LINEAR
CONTROLLER
LINEAR
CONTROLLER
VCC
HIP6521
PWM
CONTROLLER
LINEAR
CONTROLLER
Q2
Q5
+
+
V
OUT4
V
OUT1
V
2.5V
+3.3V
+3.3V
OUT2
DUAL
V
OUT3
1.8V
V
OUT4
1.5V
IN
DRIVE2
Rp2
DRIVE3
Rp3
DRIVE4
FB2
HIP6521
FB3
FB4
GND
C
C
OUT3
OUT4
Q3
OUT2
Rs4
Rs2
Rs3
Rp4
+
C
Q4
+
Q5
+
BOOT
OCSET
UGATE PHASE
LGATE PGND
FB
COMP
Q1
Q2
C
CR1
Rp1
BOOT
L
OUT1
C
OUT1
Rs1
V
OUT1
2.5V
+
3
HIP6521
Absolute Maximum Ratings Thermal Information
UGATE, BOOT. . . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 15V
VCC, PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to +7V
DRIVE, LGATE, all other pins . . . . . . . . GND - 0.3V to VCC + 0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
Operating Conditions
Supply Voltage on VCC. . . . . . . . . . . . . . . . . . . . . . . . . . +5V ±10%
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . 0oC to 70oC
Junction Temperature Range. . . . . . . . . . . . . . . . . . . 0oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Block and Simplified Power System
Diagrams, and Typical Application Schematic
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Nominal Supply Current I
CC
POWER-ON RESET
Rising VCC Threshold 4.25 - 4.5 V Falling VCC Threshold 3.75 - 4.0 V
OSCILLATOR AND SOFT-START
Free Running Frequency F Ramp Amplitude V Soft-Start Interval T
OSC
OSC SS
REFERENCE VOLTAGE
Reference Voltage (All Regulators) V
REF
All Outputs Voltage Regulation -2.0 - +2.0 % LINEAR REGULATORS (OUT2, OUT3, AND OUT4) Output Drive Current (All Linears) VCC > 4.5V 100 120 - mA Undervoltage Level (VFB/V
)V
REF
UV
SYNCHRONOUS PWM CONTROLLER ERROR AMPLIFIER
DC Gain -80- dB Gain-Bandwidth Product GBWP 15 - - MHz Slew Rate SR COMP = 10pF - 6 - V/µs
PWM CONTROLLER GATE DRIVERS
UGATE Source I UGATE Sink I LGATE Source I LGATE Sink I
UGATE UGATE LGATE LGATE
PROTECTION
OCSET Current Source I
OCSET
UGATE, LGATE, DRIVE2, DRIVE3, and DRIVE4 Open
VCC = 5V, V V
UGATE-PHASE
VCC = 5V, V V
LGATE
Thermal Resistance (Typical, Note 1) θJA (oC/W)
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
-5- mA
275 300 325 kHz
- 1.5 - V
6.25 6.83 7.40 ms
- 0.800 - V
-70- %
= 2.5V - -1 - A
UGATE
= 2.5V - 1 - A
= 2.5V - -1 - A
LGATE
= 2.5V - 2 - A
34 40 46 µA
P-P
4
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