HIP6028
Data Sheet May 1998 File Number
Advanced PWM and Dual Linear Power
Control with Integrated ACPI Support
Interface
The HIP6028 provides the power control and protection for
three output voltages in high-performance microprocessor
and computer applications. The IC integrates a PWM
controller,a linear regulator and a linear controller as well as
the monitoring and protection functions into a single
package. The PWM controller regulates the microprocessor
core voltage with a synchronous-rectified buck converter.
The linear controller regulates power for the GTL bus and
the linear regulator provides powerfor the clock driver circuit.
The HIP6028 includes an Intel-compatible, TTL 5-input
digital-to-analog converter (DAC)that adjusts the core PWM
output voltage from 2.1V
and from 1.3V
to 2.05VDC in 0.05V steps. The precision
DC
to 3.5VDC in 0.1V increments
DC
reference and voltage-mode control provide±1% static
regulation. The linear regulator uses an internal pass device
to provide a fixed 2.5V ±2.5%. The linear controller drives an
external N-channel MOSFET to provide a fixed 1.5V ±2.5%.
The HIP6028 monitors all the output voltages. A single
Power Good signal is issued when the core is within ±10% of
the DAC setting and the other levels are above their undervoltage levels. Additional built-in over-voltage protection for
the core output uses the lower MOSFET to prevent output
voltages above 115% of the DAC setting. The PWM overcurrent function monitors the output current by using the
voltage drop across the upper MOSFET’s r
DS(ON)
,
eliminating the need for a current sensing resistor.
The HIP6028 offers integrated ACPI S3 shutdown state
support. Through the SD1&3 pin, the microprocessor core
and GTL bus supplies can be shut down when entering
power-saving standby operation mode.
Ordering Information
TEMP.
RANGE
PART NUMBER
HIP6028CB 0 to 70 24 Ld SOIC M24.3
HIP6028EVAL1 Evaluation Board
(oC) PACKAGE PKG. NO.
4630
Features
• Provides 3 Regulated Voltages
- Microprocessor Core, Clock and GTL Power
• Integrated ACPI S3-State Shutdown Support
• Drives Low Cost Transistors
- PWM Controller Drives N-MOSFETs
- Linear Controller Compatible with Both MOSFETs and
NPN Bipolar Transistors
• Operates from +3.3V, +5V and +12V Inputs
• Simple Control Design
- Single-Loop Voltage-Mode PWM Control
- Fixed 1.5V GTL Output Voltage
- Fixed 2.5V Clock Output Voltage
• Fast Transient Response
- High-Bandwidth Error Amplifier
- Full 0% to 100% Duty Ratio
• Excellent Output Voltage Regulation
- Core PWM Output: ±1% Over Temperature
- Other Outputs: ±2.5% Over Temperature
• TTL-compatible 5-Bit Digital-to-Analog Core Output
Voltage Selection
- Wide Range . . . . . . . . . . . . . . . . . . . 1.3V
DC
to 3.5V
• Power-Good Output Voltage Monitor
• Microprocessor Core Voltage Protection Against Shorted
MOSFET
• Over-Voltage and Over-Current Fault Monitors
- Does Not Require Extra Current Sensing Element,
Uses MOSFET’s r
DS(ON)
• Small Converter Size
- Constant Frequency Operation; 200kHz Free-Running
Oscillator; Programmable from 50kHz to 1MHz
Applications
•
Full Motherboard Power Regulation for Computers
•
Low-Voltage Distributed Power Supplies
Pinout
HIP6028 (SOIC)
TOP VIEW
24
23
22
21
20
19
18
17
16
15
14
13
UGATE
PHASE
LGATE
PGND
OCSET
VSEN1
FB
COMP
VSEN3
DRIVE3
GND
VOUT2
VCC
VID4
VID3
VID2
VID1
VID0
PGOOD
FAULT
SS
RT
SD1&3
VIN2
1
2
3
4
5
6
7
8
9
10
11
12
DC
2-311
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Simplified Power System Diagram
+5V
IN
HIP6028
+3.3V
IN
V
V
Typical Application
+12V
IN
+5V
IN
+3.3V
IN
V
OUT2
2.5V
C
OUT2
OUT2
OUT3
Q1
Q2
V
OUT1
Q3
LINEAR
REGULATOR
HIP6028
LINEAR
CONTROLLER
PWM
CONTROLLER
FIGURE 2.
C
IN
VCC
VIN2
VOUT2
OCSET
PGOOD
UGATE
PHASE
Q1
L
OUT1
POWERGOOD
V
OUT1
1.3V TO 3.5V
V
OUT3
1.5V
C
OUT3
Q3
2-313
DRIVE3
VSEN3
SD1&3
VID0
VID1
VID2
VID3
VID4
HIP6028
GND
FIGURE 3.
LGATE
PGND
VSEN1
FB
COMP
FAULT
RT
SS
Q2
C
SS
C
OUT1
HIP6028
Absolute Maximum Ratings Thermal Information
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
PGOOD, RT, FAULT, DRIVE3,
LGATE, and UGATE Voltage . . . . . . . . . GND - 0.3V to VCC + 0.3V
Other Input, Output or I/O Voltage. . . . . . . . . . . . . GND -0.3V to 7V
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V ±10%
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . 0oC to 70oC
Junction Temperature Range. . . . . . . . . . . . . . . . . . . 0oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Nominal Supply I
POWER-ON RESET
Rising VCC Threshold V
Falling VCC Threshold V
Rising VIN2 Under-Voltage Threshold 2.45 2.55 2.65 V
VIN2 Under-Voltage Hysteresis - 0.5 - V
Rising V
OSCILLATOR
Free Running Frequency RT = OPEN 185 200 215 kHz
Total Variation 6kΩ < RT to GND < 200kΩ -15 - +15 %
Ramp Amplitude ∆V
REFERENCE and DAC
DAC(VID0-VID4) Input Low Voltage - - 0.8 V
DAC(VID0-VID4) Input High Voltage 2.0 - - V
DACOUT Voltage Accuracy -1.0 - +1.0 %
LINEAR REGULATOR
Regulation 10mA < I
Under-Voltage Level VOUT2UVVOUT2 Rising - 1.875 2.175 V
Under-Voltage Hysteresis - 0.150 - V
Over-Current Protection (Current-Limiting) 180 230 - mA
LINEAR CONTROLLER
Regulation VSEN3 = DRIVE3 1.462 1.500 1.538 V
Under-Voltage Level VSEN3UVVSEN3 Rising - 1.125 1.305 V
Under-Voltage Hysteresis - 0.090 - V
DRIVE3 Source Current VSEN3 = 1.4V, DRIVE3 = 2V, VIN2 = 3.3V 20 40 - mA
PWM CONTROLLER ERROR AMPLIFIER
DC Gain -88- dB
Gain-Bandwidth Product GBWP - 15 - MHz
Threshold - 1.25 - V
OCSET
CC
OSC
UGATE, DRIVE3, LGATE, and VOUT2 Open - 8 - mA
= 4.5V 8.6 - 10.4 V
OCSET
= 4.5V 8.2 - 10.2 V
OCSET
RT = Open - 1.9 - V
VOUT2
Thermal Resistance (Typical, Note 1) θJA (oC/W)
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 3 00oC
(SOIC - Lead Tips Only)
P-P
< 150mA 2.437 2.500 2.563 V
2-314
HIP6028
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3 (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Slew Rate SR COMP = 10pF - 6 - V/µs
PWM CONTROLLER GATE DRIVER
Upper Drive Source I
Upper Drive Sink R
Lower Drive Source I
Lower Drive Sink R
UGATE
UGATEVUGATE-PHASE
LGATE
LGATEVLGATE
PROTECTION AND CONTROL
V
Over-Voltage Trip VSEN1 Rising 112 115 118 %
OUT1
FAULT Sourcing Current I
OCSET Current Source I
Soft-Start Current I
V
OUT1
V
OUT1
and V
and V
Disable Low Voltage - - 0.8 V
OUT3
Disable High Voltage 2.0 - - V
OUT3
OVP
OCSETVOCSET
SS
POWER GOOD
V
Upper Threshold VSEN1 Rising 108 - 110 %
OUT1
V
Under Voltage VSEN1 Rising 92 - 94 %
OUT1
V
Hysteresis (VSEN1 / DACOUT) Upper/Lower Threshold - 2 - %
OUT1
PGOOD Voltage Low V
PGOODIPGOOD
VCC = 12V, V
UGATE
(or V
) = 6V - 1 - A
GATE2
= 1V - 1.7 3.5 Ω
VCC = 12V, V
= 1V - 1 - A
LGATE
= 1V - 1.4 3.0 Ω
V
= 10V 10 14 - mA
FAULT
= 4.5V
DC
170 200 230 µA
-11- µA
= -4mA - - 0.5 V
Typical Performance Curves
1000
100
RESISTANCE (kΩ)
10
RT PULLUP
TO +12V
RT PULLDOWN TO V
10 100 1000
SWITCHING FREQUENCY (kHz)
FIGURE 4. RT RESISTANCE vs FREQUENCY FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
SS
100
80
60
(mA)
CC
I
40
20
0
100 200
C
UGATE
V
= 12V, VIN = 5V
VCC
= C
300 400
= C
LGATE
GATE
600 700 800 900
500
SWITCHING FREQUENCY (kHz)
C
C
GATE
C
GATE
C
GATE
= 4800pF
GATE
= 3600pF
= 1500pF
= 660pF
1000
2-315