HIP6018B
Data Sheet May 1999 File Number
Advanced PWM and Dual Linear Power
Control
The HIP6018B provides the power control and protection for
three output voltages in high-performance microprocessor
and computer applications. The IC integrates a PWM
controllers, a linear regulator and a linear controller as well
as the monitoring and protection functions into a single
package. The PWM controller regulates the microprocessor
core voltage with a synchronous-rectified buck converter.
The linear controller regulates power for the GTL bus and
the linear regulator provides powerfor the clock driver circuit.
The HIP6018B includes an Intel-compatible, TTL 5-input
digital-to-analog converter (DAC) that adjusts the core PWM
output voltage from 2.1VDC to 3.5VDC in 0.1V increments
and from 1.3VDC to 2.05VDC in 0.05V steps. The precision
reference and voltage-mode control provide±1% static
regulation. The linear regulator uses an internal pass device
to provide 2.5V ±2.5%. The linear controller drives an
external N-channel MOSFET to provide 1.5V ±2.5%.
The HIP6018B monitors all the output voltages. A single
Power Good signal is issued when the core is within 10% of
the DAC setting and the other levels are above their undervoltage levels. Additional built-in over-voltage protection for
the core output uses the lower MOSFET to prevent output
voltages above 115% of the DAC setting. The PWM overcurrent function monitors the output current by using the
voltage drop across the upper MOSFET’s r
DS(ON)
,
eliminating the need for a current sensing resistor.
Pinout
HIP6018B
(SOIC)
TOP VIEW
24
23
22
21
20
19
18
17
16
15
14
13
UGATE1
PHASE1
LGATE1
PGND
OCSET1
VSEN1
FB1
COMP1
FB3
DRIVE3
GND
VOUT2
VCC
VID4
VID3
VID2
VID1
VID0
PGOOD
FAULT
SS
RT
FB2
VIN2
1
2
3
4
5
6
7
8
9
10
11
12
4586.1
Features
• Provides 3 Regulated Voltages
- Microprocessor Core, Clock and GTL Power
• Drives N-Channel MOSFETs
• Operates from +3.3V, +5V and +12V Inputs
• Simple Single-Loop PWM Control Design
- Voltage-Mode Control
• Fast Transient Response
- High-Bandwidth Error Amplifier
- Full 0% to 100% Duty Ratios
• Excellent Output Voltage Regulation
- Core PWM Output: ±1% Over Temperature
- Other Outputs: ±2.5% Over Temperature
• TTL-Compatible 5-Bit Digital-to-Analog Core Output
Voltage Selection
- Wide Range . . . . . . . . . . . . . . . . . . . 1.3V
DC
to 3.5V
- 0.1V Steps . . . . . . . . . . . . . . . . . . . . 2.1VDC to 3.5V
- 0.05V Steps . . . . . . . . . . . . . . . . . . 1.3VDC to 2.05V
• Power-Good Output Voltage Monitor
• Microprocessor Core Voltage Protection Against Shorted
MOSFET
• Over-Voltage and Over-Current Fault Monitors
- Does Not Require Extra Current Sensing Element,
Uses MOSFET’s r
DS(ON)
• Small Converter Size
- Constant Frequency Operation
- 200kHz Free-Running Oscillator; Programmable from
50kHz to over 1MHz
Applications
•
Full Motherboard Power Regulation for Computers
•
Low-Voltage Distributed Power Supplies
Ordering Information
TEMP.
PART NUMBER
HIP6018BCB 0 to 70 24 Ld SOIC M24.3
RANGE (oC) PACKAGE
PKG.
NO.
DC
DC
DC
2-238
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Simplified Power System Diagram
+5V
IN
HIP6018B
+3.3V
IN
V
OUT2
V
OUT3
Typical Application
+12V
IN
+5V
IN
+3.3V
IN
V
OUT2
2.5V
C
OUT2
Q1
Q2
V
OUT1
Q3
LINEAR
REGULATOR
HIP6018B
LINEAR
CONTROLLER
PWM1
CONTROLLER
FIGURE 2.
C
IN
VCC
VIN2
VOUT2
FB2
OCSET1
PGOOD
UGATE1
PHASE1
Q1
POWERGOOD
L
OUT1
V
OUT1
1.3V TO 3.5V
V
OUT3
1.5V
C
Q3
OUT3
2-240
DRIVE3
FB3
VID0
VID1
VID2
VID3
VID4
HIP6018B
GND
FIGURE 3.
LGATE1
PGND
VSEN1
FB1
COMP1
FAULT
RT
SS
Q2
CR1
C
SS
C
OUT1
HIP6018B
Absolute Maximum Ratings Thermal Information
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
PGOOD, R T, FA ULT, and GATE Voltage . . . GND - 0.3V to VCC + 0.3V
Input, Output or I/O Voltage. . . . . . . . . . . . . . . . . . GND -0.3V to 7V
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V ±10%
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . .0oC to 70oC
Junction Temperature Range. . . . . . . . . . . . . . . . . . . . 0oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Nominal Supply I
POWER-ON RESET
Rising VCC Threshold V
Falling VCC Threshold V
Rising VIN2 Under-Voltage Threshold 2.45 2.55 2.65 V
VIN2 Under-Voltage Hysteresis - 100 - mV
Rising V
OSCILLATOR
Free Running Frequency RT = OPEN 185 200 215 kHz
Total Variation 6kΩ < RT to GND < 200kΩ -15 - +15 %
Ramp Amplitude ∆V
REFERENCE AND DAC
DAC(VID0-VID4) Input Low Voltage - - 0.8 V
DAC(VID0-VID4) Input High Voltage 2.0 - - V
DACOUT Voltage Accuracy -1.0 - +1.0 %
Reference Voltage (Pin FB2 and FB3) 1.240 1.265 1.290 V
LINEAR REGULATOR
Regulation 10mA < I
Under-Voltage Level FB2
Under-Voltage Hysteresis -6- %
Over-Current Protection 180 230 - mA
Over-Current Protection During Start-Up 560 700 - mA
LINEAR CONTROLLER
Regulation VSEN3 = DRIVE3, 0 < I
Under-Voltage Level FB3
Under-Voltage Hysteresis -6- %
Output Drive Current I
DRIVE3 Source Current VIN2 - DRIVE3 > 0.6V 20 40 - mA
Threshold - 1.25 - V
OCSET1
CC
OSC
DRIVE3
UGATE1, DRIVE3, LGATE1, and VOUT2 Open - 8 - mA
= 4.5V 8.6 - 10.4 V
OCSET
= 4.5V 8.2 - 10.2 V
OCSET
RT = Open - 1.9 - V
VOUT2
FB2 Rising - 75 87 %
UV
FB3 Rising - 75 87 %
UV
VIN2 - V
OUT3
Thermal Resistance (Typical, Note 1) θJA (oC/W)
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
SOIC Package (with 3 in2 of copper) . . . . . . . . . . . 65
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
P-P
< 150mA -2.5 - 2.5 %
< 20mA -2.5 - 2.5 %
DRIVE3
> 1.5V 20 40 - mA
2-241
HIP6018B
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3 (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
PWM CONTROLLER ERROR AMPLIFIER
DC Gain -88- dB
Gain-Bandwidth Product GBWP - 15 - MHz
Slew Rate SR COMP = 10pF - 6 - V/µs
PWM CONTROLLER GATE DRIVER
Upper Drive Source I
Upper Drive Sink R
Lower Drive Source I
Lower Drive Sink R
UGATE
UGATEVUGATE1-PHASE1
LGATE
LGATEVLGATE1
PROTECTION
V
Over-Voltage Trip VSEN1 Rising 112 115 118 %
OUT1
FAULT Sourcing Current I
OCSET1 Current Source I
Soft-Start Current I
OVP
OCSETVOCSET
SS
Chip Shutdown Soft-Start Threshold - - 1.0 V
POWER GOOD
V
Upper Threshold VSEN1 Rising 108 - 110 %
OUT1
V
Under Voltage VSEN1 Rising 92 - 94 %
OUT1
V
Hysteresis (VSEN1 / DACOUT) Upper/Lower Threshold - 2 - %
OUT1
PGOOD Voltage Low V
PGOODIPGOOD
VCC = 12V, V
UGATE1
(or V
) = 6V - 1 - A
GATE2
= 1V - 1.7 3.5 Ω
VCC = 12V, V
= 1V - 1 - A
LGATE1
= 1V - 1.4 3.0 Ω
V
= 10V 10 14 - mA
FAULT
= 4.5V
DC
170 200 230 µA
-11- µA
= -4mA - - 0.5 V
Typical Performance Curves
1000
100
RESISTANCE (kΩ)
10
RT PULLUP
TO +12V
RT PULLDOWN TO V
10 100 1000
SWITCHING FREQUENCY (kHz)
FIGURE 4. RT RESISTANCE vs FREQUENCY FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
SS
100
80
60
(mA)
CC
I
40
20
C
UGATE1
V
VCC
0
100 200
= C
= 12V, VIN = 5V
300 400
= C
LGATE1
SWITCHING FREQUENCY (kHz)
GATE
500
C
= 4800pF
GATE
C
= 3600pF
GATE
C
= 1500pF
GATE
C
= 660pF
GATE
600 700 800 900
1000
2-242