HIP6017B
PRELIMINARY
Data Sheet March 1999
Advanced PWM and Dual Linear Power
Control
The HIP6017B provides the power control and protection for
three output voltages in high-performance microprocessor
and computer applications. The IC integrates a PWM
controller,alinearregulatorand a linear controller as well as
the monitoring and protection functions into a single 28 lead
SOIC package. The PWM controller regulates the
microprocessor core voltage with a synchronous-rectified
buck converter. The linear controller regulates power for the
GTL bus and the linear regulator provides power for the
clock driver circuits.
The HIP6017B includes an Intel-compatible, TTL 5-input
digital-to-analog converter (DAC) that adjusts the core PWM
output voltage from 2.1VDC to 3.5VDC in 0.1V increments
and from 1.3VDC to 2.05VDC in 0.05V steps. The precision
reference and voltage-mode control provide±1% static
regulation. The linear regulator uses an internal pass device
to provide 2.5V ±2.5%. The linear controller drives an
external N-Channel MOSFET to provide 1.5V ±2.5%.
The HIP6017B monitors all the output voltages. A single
Power Good signal is issued when the core is within 10% of
the DAC setting and the other levels are above their undervoltage levels. Additional built-in over-voltage protection for
the core output uses the lower MOSFET to prevent output
voltages above 115% of the DAC setting. The PWM overcurrent function monitors the output current by using the
voltage drop across the upper MOSFET’s r
DS(ON)
,
eliminating the need for a current sensing resistor.
Pinout
HIP6017B (SOIC)
TOP VIEW
File Number
4585
Features
• Provides 3 Regulated Voltages
- Microprocessor Core, Clock and GTL Power
• Linear Controller Drives Either N-Channel MOSFETs or
Bipolar Transistors
• Operates from +3.3V, +5V and +12V Inputs
• Simple Single-Loop PWM Control Design
- Voltage-Mode Control
• Fast Transient Response
- High-Bandwidth Error Amplifier
- Full 0% to 100% Duty Ratios
• Excellent Output Voltage Regulation
- Core PWM Output: ±1% Over Temperature
- Other Outputs: ±2.5% Over Temperature
• TTL-Compatible 5-Bit Digital-to-Analog Core Output
Voltage Selection
- Wide Range - 1.3V
- 0.1V Steps from 2.1VDC to 3.5V
- 0.05V Steps from 1.3VDC to 2.05V
• Power-Good Output Voltage Monitor
• Microprocessor Core Voltage Protection Against Shorted
MOSFET
• Over-Voltage and Over-Current Fault Monitors
- Does Not Require Extra Current Sensing Element,
Uses MOSFET’s r
• Small Converter Size
- Constant Frequency Operation
- 200kHz Free-Running Oscillator; Programmable from
50kHz to over 1MHz
to 3.5V
DC
DS(ON)
DC
DC
DC
NC
NC
VID4
VID3
VID2
VID1
VID0
PGOOD
GND2
V33
NC
SS
FAULT/RT
FB2
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
UGATE1
PHASE1
LGATE1
PGND
OCSET1
VSEN1
FB1
COMP1
FB3
DRIVE3
GND
VOUT2
VIN2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
1
Applications
•
Full Motherboard Power Regulation for Computers
•
Low-Voltage Distributed Power Supplies
Ordering Information
TEMP.
PART NUMBER
HIP6017BCB 0 to 70 28 Ld SOIC M28.3
www.intersil.com or 407-727-9207
RANGE (oC) PACKAGE
| Copyright © Intersil Corporation 1999
PKG.
NO.
Simplified Power System Diagram
+5V
IN
+3.3V
IN
V
OUT2
V
OUT3
Typical Application
HIP6017B
LINEAR
REGULATOR
HIP6017B
LINEAR
CONTROLLER
FIGURE 2.
PWM1
CONTROLLER
V
OUT1
+12V
+5V
+3.3V
V
OUT2
2.5V
V
OUT3
1.5V
IN
IN
IN
C
OUT2
C
OUT3
Q3
L
IN
C
IN
VCC
VIN2
V33
VOUT2
FB2
DRIVE3
FB3
VID0
VID1
VID2
VID3
VID4
HIP6017B
OCSET1
PGOOD
UGATE1
PHASE1
LGATE1
PGND
VSEN1
FB1
COMP1
FAULT/RT
SS
Q1
Q2
CR1
L
OUT1
C
OUT1
POWERGOOD
V
OUT1
1.3V TO 3.5V
C
GND
GND2
SS
FIGURE 3.
3
HIP6017B
Absolute Maximum Ratings Thermal Information
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +15V
PGOOD, R T, FA ULT, and GATE Voltage . . . GND - 0.3V to VCC + 0.3V
Input, Output or I/O Voltage. . . . . . . . . . . . . . . . . . GND -0.3V to 7V
Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V ±10%
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . .0oC to 70oC
Junction Temperature Range. . . . . . . . . . . . . . . . . . . . 0oC to 125oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted.
Refer to Figures 1, 2 and 3
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Nominal Supply I
POWER-ON RESET
Rising VCC Threshold V
Falling VCC Threshold V
Rising VIN2 Under-Voltage Threshold 2.45 2.55 2.65 V
VIN2 Under-Voltage Hysteresis - 500 - mV
Rising V
OSCILLATOR
Free Running Frequency RT = OPEN 185 200 215 kHz
Total Variation 6kΩ < RT to GND < 200kΩ -15 - +15 %
Ramp Amplitude ∆V
REFERENCE AND DAC
DAC(VID0-VID4) Input Low Voltage - - 0.8 V
DAC(VID0-VID4) Input High Voltage 2.0 - - V
DACOUT Voltage Accuracy -1.0 - +1.0 %
Reference Voltage (Pin FB2 and FB3) 1.240 1.265 1.290 V
LINEAR REGULATOR
Regulation 10mA < I
Under-Voltage Level FB2
Under-Voltage Hysteresis -6- %
Over-Current Protection 180 230 - mA
Over-Current Protection During Start-Up 560 700 - mA
LINEAR CONTROLLER
Regulation VSEN3 = DRIVE3, 0 < I
Under-Voltage Level FB3
Under-Voltage Hysteresis -6- %
Output Drive Current I
Threshold - 1.25 - V
OCSET1
CC
DRIVE3
UGATE1, DRIVE3, LGATE1, and VOUT4 Open - 10 - mA
= 4.5V 8.6 - 10.4 V
OCSET
= 4.5V 8.2 - 10.2 V
OCSET
RT = Open - 1.9 - V
OSC
VOUT2
FB2 Rising - 75 87 %
UV
FB3 Rising - 75 87 %
UV
VIN2 - V
DRIVE3
Thermal Resistance (Typical, Note 1) θJA (oC/W)
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
P-P
< 150mA -2.5 - +2.5 %
< 20mA -2.5 - +2.5 %
DRIVE3
> 0.6V 20 40 - mA
4
HIP6017B
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted.
Refer to Figures 1, 2 and 3 (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
PWM CONTROLLER ERROR AMPLIFIER
DC Gain -88- dB
Gain-Bandwidth Product GBWP - 15 - MHz
Slew Rate SR COMP = 10pF - 6 - V/µs
PWM CONTROLLER GATE DRIVER
Upper Drive Source I
Upper Drive Sink R
Lower Drive Source I
Lower Drive Sink R
UGATE
UGATEVUGATE1-PHASE1
LGATE
LGATEVLGATE1
PROTECTION
V
Over-Voltage Trip VSEN1 Rising 112 115 118 %
OUT1
FAULT Sourcing Current I
OCSET1 Current Source I
Soft-Start Current I
OVP
OCSETVOCSET
SS
Chip Shutdown Soft-Start Threshold - - 1.0 V
POWER GOOD
V
Upper Threshold VSEN1 Rising 108 - 110 %
OUT1
V
Under-Voltage (Lower Threshold) VSEN1 Rising 92 - 94 %
OUT1
V
Hysteresis (VSEN1/DACOUT) Upper/Lower Threshold - 2 - %
OUT1
PGOOD Voltage Low V
PGOODIPGOOD
VCC = 12V, V
= 6V - 1 - A
UGATE1
= 1V - 1.7 3.5 Ω
VCC = 12V, V
= 1V - 1 - A
LGATE1
= 1V - 1.4 3.0 Ω
V
FAULT/RT
= 10V 10 14 - mA
= 4.5V
DC
170 200 230 µA
-11- µA
= -4mA - - 0.5 V
Typical Performance Curves
1000
100
RESISTANCE (kΩ)
10
RT PULLUP
TO +12V
RT PULLDOWN TO V
10 100 1000
SWITCHING FREQUENCY (kHz)
FIGURE 4. RT RESISTANCE vs FREQUENCY FIGURE 5. BIAS SUPPLY CURRENT vs FREQUENCY
SS
100
80
60
(mA)
CC
I
40
20
C
UGATE1
V
VCC
0
100 200
= C
= 12V, VIN = 5V
300 400
= C
LGATE1
SWITCHING FREQUENCY (kHz)
GATE
500
C
= 4800pF
GATE
C
= 3600pF
GATE
C
= 1500pF
GATE
C
= 660pF
GATE
600 700 800 900
1000
5