Intersil Corporation HIP2106 Datasheet

HIP2106

Data Sheet August 1999 File Number

100V/1A Peak, Low Cost, High Frequency Half Bridge Driver

The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, av ailable in 8 lead plastic SOIC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new levelshifter topology yields the low-power benefits of pulsed operation with the safetyofDCoperation.Unlikesome competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

Ordering Information

TEMP.

PART NUMBER

HIP2106IB -40 to 85 8 Ld SOIC M8.15 HIP2106IP -40 to 85 8 Ld PDIP E8.3

RANGE (oC) PACKAGE

PKG.

NO.

Pinout

HIP2106 (SOIC, PDIP)

TOP VIEW

LO V

4406.2

Features

• Drives N-Channel MOSFET Half Bridge

• Space Saving SO8 Package

• Bootstrap Supply Max Voltage to 116V

• On-Chip 1Ω Bootstrap Diode

• Fast Propagation Times Needed for Multi-MHz Circuits

• Drives 1000pF Load at 500kHz with Rise and Fall Times of Typically 20ns

• CMOS Input Thresholds for Improved Noise Immunity

• Independent Inputs for Non-Half Bridge Topologies

• No Start-Up Problems

• Outputs UnaffectedbySupplyGlitches,HSRingingBelow Ground, or HS Slewing at High dv/dt

• Low Power Consumption

• Wide Supply Range

• Supply Undervoltage Protection

•3Ω Output Resistance

Applications

• Telecom Half Bridge Power Supplies

• Avionic DC-DC Converters

• Two-Switch Forward Converters

• Active Clamp Forward Converters

Application Block Diagram

PWM

CONTROLLER

+12V

+100V

SECONDARY

CIRCUIT

DRIVE

CONTROL

HIP2106

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

REFERENCE

AND

ISOLATION

Functional Block Diagram

Other Applications

UNDER

VOLTAGE

UNDER

VOLTAGE

HIP2106

LEVEL SHIFT

DRIVER

+12V

+48V

PWM

HIP

2106

FIGURE 1. TWO-SWITCH FORWARD CONVERTER

+48V

PWM

HIP

2106

SECONDARY

CIRCUIT

ISOLATION

SECONDARY

CIRCUIT

FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE CLAMP

ISOLATION

HIP2106

Absolute Maximum Ratings Thermal Information

Supply Voltage, V

DD,VHB-VHS

LI and HI Voltages . . . . . . . . . . . . . . . . . . . . . . . . .-3V to VDD +0.3V

Voltage on LO . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V

Voltage on HO . . . . . . . . . . . . . . . . . . . . . . VHS -0.3V to VHB +0.3V

Voltage on HS (Continuous) . . . . . . . . . . . . . . . . . . . . . -1V to 110V

Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V

Average Current in VDD to HB Diode. . . . . . . . . . . . . . . . . . . 100mA

ESD Classiﬁcation . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)

Recommended Operating Conditions

Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . +9V to +16.5V

Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

2. All Voltages Relative to Pin 4, VSS Unless Otherwise Specified.

Electrical Speciﬁcations VDD= VHB= 12V, VSS= VHS= 0V, No Load on LO or HO, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS

SUPPLY CURRENTS

VDD Quiescent Current I VDD Operating Current I Total HB Quiescent Current I Total HB Operating Current I HB to VSS Current, Quiescent I HB to VSS Current, Operating I

INPUT PINS

Low Level Input Voltage Threshold V High Level Input Voltage Threshold V Input Voltage Hysteresis V Input Pulldown Resistance R

UNDER VOLTAGE PROTECTION

VDD Rising Threshold V VDD Threshold Hysteresis V HB Rising Threshold V HB Threshold Hysteresis V

BOOT STRAP DIODE

Low-Current Forward Voltage V High-Current Forward Voltage V Dynamic Resistance R

LO GATE DRIVER

Low Level Output Voltage V High Level Output Voltage V Peak Pullup Current I Peak Pulldown Current I

HO GATE DRIVER

Low Level Output Voltage V High Level Output Voltage V Peak Pullup Current I

. . . . . . . . . . . . . . . . . . .-0.3V to 18V

DDO

HB HBO HBS

HBSO

IHYS

DDR DDH

HBR

HBH

OLL

OHL OHL

OLL

OLH

OHH

LI = HI = 0V - 0.1 0.15 - 0.2 mA f = 500kHz - 1.5 2.5 - 3 mA LI = HI = 0V - 0.1 0.15 - 0.2 mA f = 500kHz - 1.5 2.5 - 3 mA VHS = VHB = 116.5V - 0.05 1 - 10 µA f = 500kHz - 0.7 - - - mA

= 100µA - 0.45 0.55 - 0.7 V

VDD-HB

= 100mA - 0.7 0.8 - 1 V

VDD-HB

= 100mA - 0.8 1 - 1.5 Ω

VDD-HB

ILO = 100mA - 0.25 0.3 - 0.4 V ILO = -100mA, V VLO = 0V - 1 - - - A VLO = 12V - 1 - - - A

IHO = 100mA - 0.25 0.3 - 0.4 V IHO = -100mA, V VHO = 0V - 1 - - - A

Thermal Resistance (Typical, Note 1) θJA (oC/W)

SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160

PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns

Maximum Power Dissipation at 25oC in Free Air. . . . . . . . . .780mW

Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC

Maximum Junction Temperature Range . . . . . . . . . -55oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC

(Lead Tips Only)

Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V

Voltage on HB. . .VHS +8V to VHS+16.5V and VDD-1V to VDD+100V

TJ= -40oC

TJ = 25oC

TO 125oC

4 5.4 - 3 - V

- 5.8 8 - 9 V

- 0.4 - - - V

- 200 - 100 500 kΩ

7 7.3 8 6.5 8.5 V

- 0.5 - - - V

6.5 6.9 7.5 6 8 V

- 0.4 - - - V

OHL

OHH

= VDD-V

= VHB-V

- 0.25 0.3 - 0.4 V

UNITSMIN TYP MAX MIN MAX

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