intersil HIP2101 DATA SHEET

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HIP2101

Data Sheet October 21, 2004 FN9025.8

100V/2A Peak, Low Cost, High Frequency Half Bridge Driver

The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the lowpower benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

Ordering Information

PART NUMBER

HIP2101IB -40 to 125 8 Ld SOIC M8.15 HIP2101IBZ (Note 1) -40 to 125 8 Ld SOIC (Pb-free) M8.15 HIP2101EIB -40 to 125 8 Ld EPSOIC M8.15C HIP2101EIBZ

(Note 1) HIP2101IR -40 to 125 16 Ld 5x5 QFN L16.5x5 HIP2101IRZ (Note 1) -40 to 125 16 Ld 5x5 QFN

HIP2101IR4 -40 to 125 12 Ld 4x4 DFN L12.4x4A HIP2101IR4Z

(Note 1)

NOTES:

1. Intersil Pb-free products employ special Pb-free material sets;

molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C.

2. Add “T” suffix for Tape and Reel packing option.

TEMP.

RANGE (°C) PACKAGE

-40 to 125 8 Ld EPSOIC (Pb-free)

(Pb-free)

-40 to 125 12 Ld 4x4 DFN (Pb-free)

PKG.

DWG. #

M8.15C

L16.5x5

L12.4x4A

Features

• Drives N-Channel MOSFET Half Bridge

• SOIC, EPSOIC, QFN and DFN Package Options

• SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221

• Pb-free Product Available (RoHS Compliant)

• Bootstrap Supply Max Voltage to 114VDC

• On-Chip 1Ω Bootstrap Diode

• Fast Propagation Times for Multi-MHz Circuits

• Drives 1000pF Load with Rise and Fall Times Typ. 10ns

• TTL/CMOS Input Thresholds Increase Flexibility

• Independent Inputs for Non-Half Bridge Topologies

• No Start-Up Problems

• Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt

• Low Power Consumption

• Wide Supply Range

• Supply Undervoltage Protection

•3Ω Output Driver Resistance

• QFN/DFN Package:

- Compliant to JEDEC PUB95 MO-220

QFN - Quad Flat No Leads - Package Outline

- Near Chip Scale Package footprint, which improves

PCB efficiency and has a thinner profile

Applications

• Telecom Half Bridge Power Supplies

• Avionics DC-DC Converters

• Two-Switch Forward Converters

• Active Clamp Forward Converters

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

Pinouts

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HIP2101 (SOIC, EPSOIC)

TOP VIEW

2 HO HS

EPAD

LO V

NOTE: EPAD = Exposed PAD.

Application Block Diagram

HIP2101

HIP2101IR4 (DFN)

TOP VIEW

6 7

HS HI

EPAD

LO V NC NC LI

HIP2101 (QFN)

TOP VIEW

VDDLO

16 14 13

EPAD

6578

PWM

CONTROLLER

+12V

CONTROL

HIP2101

DRIVE

+100V

REFERENCE

AND

ISOLATION

SECONDARY

CIRCUIT

FN9025.8

Functional Block Diagram

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*EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For

best thermal performance connect the EPAD to the PCB power ground plane.

UNDER

VOLTAGE

UNDER

VOLTAGE

HIP2101

LEVEL SHIFT

EPAD (EPSOIC, QFN and DFN PACKAGES ONLY)

HB HO

DRIVER

+12V

+48V

PWM

HIP

2101

FIGURE 1. TWO-SWITCH FORWARD CONVERTER

+48V

PWM

HIP

2101

SECONDARY

CIRCUIT

ISOLATION

SECONDARY

CIRCUIT

FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE CLAMP

ISOLATION

FN9025.8

HIP2101

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Absolute Maximum Ratings Thermal Information

Supply Voltage, V

LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.0V

Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to V

Voltage on HO (Note 4) . . . . . . . . . . . . . . . V

Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V

Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V

Average Current in V

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)

DD, VHB-VHS

Maximum Recommended Operating Conditions

Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . .+9V to 14.0VDC

Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 1V to 100V

Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V

Voltage on HB. . V

HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.

NOTES:

3. The HIP2101 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this mode of operation.

4. All voltages referenced to V

is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

5. θ

is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. θ

6. θ

“case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379.

+8V to VHS +14.0V and VDD -1V to V

(Notes 3, 4). . . . . . . . -0.3V to 18V

+0.3V

-0.3V to VHB +0.3V

to HB diode. . . . . . . . . . . . . . . . . . . 100mA

unless otherwise specified.

+100V

Thermal Resistance (Typical) θ

SOIC (Note 5) . . . . . . . . . . . . . . . . . . . 95 N/A

EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0

QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5

DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0

Max Power Dissipation at 25 Max Power Dissipation at 25 Max Power Dissipation at 25

Storage Temperature Range. . . . . . . . . . . . . . . . . . .-65°C to 150°C

Junction Temperature Range . . . . . . . . . . . . . . . . . .-55°C to 150°C

Lead Temperature (Soldering 10s - SOIC Lead Tips Only). . 300°C For Recommended soldering conditions see Tech Brief TB389.

C in Free Air (SOIC, Note 5) . . . . 1.3W

C in Free Air (EPSOIC, Note 6). . 3.1W

C in Free Air (QFN, Note 6). . . . . 3.3W

(°C/W) θJC (°C/W)

JC,

the

Electrical Specifications V

PARAMETERS SYMBOL T EST CONDITIONS

SUPPLY CURRENTS

Quiescent Current I

VDD Operating Current I Total HB Quiescent Current I Total HB Operating Current I HB to V HB to V

INPUT PINS

Low Level Input Voltage Threshold V High Level Input Voltage Threshold V Input Pulldown Resistance R

UNDER VOLTAGE PROTECTION

V V HB Rising Threshold V HB Threshold Hysteresis V

Current, Quiescent I

Current, Operating I

Rising Threshold V

Threshold Hysteresis V

= V

= 12V, V

DDO

HB HBO HBS

HBSO

IL IH

DDR DDH

HBR

HBH

= V

LI = HI = 0V - 0.3 0.45 - 0.6 mA f = 500kHz - 1.7 3.0 - 3.4 mA LI = HI = 0V - 0.1 0.15 - 0.2 mA f = 500kHz - 1.5 2.5 - 3 mA VHS = VHB = 114V - 0.05 1.5 - 10 µA f = 500kHz - 0.7 - - - mA

= 0V, No Load on LO or HO, Unless Otherwise Specified

= 25°C

0.8 1.65 - 0.8 - V

- 1.65 2.2 - 2.2 V

- 200 - 100 500 kΩ

7 7.3 7.8 6.5 8 V

-0.5---V

6.5 6.9 7.5 6 8 V

-0.4---V

= -40°C TO

125°C

UNITSMIN TYP MAX MIN MAX

FN9025.8

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intersil HIP2101 DATA SHEET

Specifications and Main Features

Frequently Asked Questions

User Manual