Intersil Corporation HIP2100IB, HIP2100 Datasheet

HIP2100

Data Sheet October 1998 File Number 4022.2

100V/2A Peak, Low Cost, High Frequency
Half Bridge Driver

The HIP2100 is a high frequency, 100V Half Bridge
N-Channel MOSFET driver IC, available in 8 lead plastic
SOIC. The low-side and high-side gate drivers are
independently controlled and matched to 8ns. This gives the
user maximum flexibility in dead-time selection and driver
protocol. Undervoltage protection on both the low-side and
high-side supplies force the outputs low. An on-chip diode
eliminates the discrete diode required with other driver ICs.
A new level-shifter topology yields the low-power benefits of
pulsed operation with the safety of DC operation. Unlike
some competitors, the high-side output returns to its correct
state after a momentary undervoltage of the high-side
supply.

Ordering Information

TEMP.

PART NUMBER

HIP2100IB -40oC to 85oC 8 Ld SOIC (N) M8.15

RANGE (oC) PACKAGE PKG. NO.

Features

• Drives N-Channel MOSFET Half Bridge

• Space Saving SO8 Package

• Bootstrap Supply Max Voltage to 116VDC

• On-Chip 1Ω Bootstrap Diode

• Fast Propagation Times Needed for Multi-MHz Circuits

• Drives 1000pF Load at 1MHz with Rise and Fall Times of
Typically 10ns

• CMOS Input Thresholds for Improved Noise Immunity

• Independent Inputs for Non-Half Bridge Topologies

• No Start-Up Problems

• Outputs Unaffectedby Supply Glitches,HSRinging Below
Ground, or HS Slewing at High dv/dt

• Low Power Consumption

• Wide Supply Range

• Supply Undervoltage Protection

•3Ω Output Resistance

Applications

• Telecom Half Bridge Power Supplies

• Avionic DC-DC Converters

• Two-Switch Forward Converters

• Active Clamp Forward Converters

Pinout

V

DD

HB
HO
HS

HIP2100 (SOIC)

TOP VIEW

1
2
3
4

Application Block Diagram

+100V

+12V

8

LO
V

7

SS

LI

6

HI

5

HI

PWM

CONTROLLER

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

LI

V

DD

HB

DRIVE

HI

DRIVE

CONTROL

LO

HIP2100

V

SS

http://www.intersil.com or 407-727-9207

HO

HS

LO

REFERENCE

ISOLATION

| Copyright © Intersil Corporation 1999

AND

SECONDARY

CIRCUIT

Functional Block Diagram

1

V

DD

5

HI

6

LI

7

V

SS

Other Applications

UNDER

VOLTAGE

UNDER

VOLTAGE

HIP2100

LEVEL SHIFT

DRIVER

DRIVER

2

HB

3

HO

4

HS

8

LO

+12V

+12V

+48V

PWM

HIP

2100

FIGURE 1. TWO-SWITCH FORWARD CONVERTER

+48V

PWM

HIP

2100

SECONDARY

CIRCUIT

ISOLATION

SECONDARY

CIRCUIT

FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE CLAMP

2

ISOLATION

HIP2100

Absolute Maximum Ratings Thermal Information

Supply Voltage, V

DD,VHB-VHS

LI and HI Voltages . . . . . . . . . . . . . . . . . . . . . . . . -3V to VDD +0.3V

Voltage on LO . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V

Voltage on HO . . . . . . . . . . . . . . . . . . . . . . VHS -0.3V to VHB +0.3V

Voltage on HS (Continuous) . . . . . . . . . . . . . . . . . . . . . -1V to 110V

Voltage on HB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V

Average Current in VDD to HB diode. . . . . . . . . . . . . . . . . . . 100mA

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV)

NOTE: AllVoltagesRelativetoPin7,VSSUnlessOtherwise Specified

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied.

Recommended Operating Conditions

Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . +9V to +16.5V

Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V

. . . . . . . . . . . . . . . . . . -0.3V to 18V

Thermal Resistance θ

JA

θ

JC

SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160oC/W N/A

SOIC in Thermal Conductive Media. . . . . . . . . . . . . . . . . 70oC/W

HS Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/ns

Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC

Junction Temperature Range. . . . . . . . . . . . . . . . . . -55oC to 150oC

Lead Temperature (Soldering 10s - Lead Tips Only). . . . . . . 300oC

Maximum Power Dissipation at +25oC in Free Air. . . . . . . . 780mW

Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V

Voltage on HB VHS +8V to VHS +16.5V and VDD -1V to VDD+100V

Electrical Specifications V

= VHB= 12V, VSS= VHS= 0V, No Load on LO or HO, Unless Otherwise Specified

DD

PARAMETERS SYMBOL TEST CONDITIONS

SUPPLY CURRENTS

VDD Quiescent Current I
VDD Operating Current I
Total HB Quiescent Current I
Total HB Operating Current I
HB to VSS Current, Quiescent I
HB to VSS Current, Operating I

INPUT PINS

Low Level Input Voltage Threshold V
High Level Input Voltage Threshold V
Input Voltage Hysteresis V
Input Pulldown Resistance R

UNDER VOLTAGE PROTECTION

VDD Rising Threshold V
VDD Threshold Hysteresis V
HB Rising Threshold V
HB Threshold Hysteresis V

BOOT STRAP DIODE

Low-Current Forward Voltage V
High-Current Forward Voltage V
Dynamic Resistance R

LO GATE DRIVER

Low Level Output Voltage V
High Level Output Voltage V
Peak Pullup Current I
Peak Pulldown Current I

HO GATE DRIVER

Low Level Output Voltage V
High Level Output Voltage V
Peak Pullup Current I
Peak Pulldown Current I

DD

DDO

HB
HBO
HBS

HBSO

IL

IH

IHYS

I

DDR
DDH

HBR
HBH

DL

DH

D

OLL
OHL

OHL

OLL

OLH

OHH
OHH
OLH

TJ= - 40oC

TJ = 25oC

TO 125oC

UNITSMIN TYP MAX MIN MAX

LI = HI = 0V - 0.1 0.15 - 0.2 mA
f = 500kHz - 1.5 2.5 - 3 mA
LI = HI = 0V - 0.1 0.15 - 0.2 mA
f = 500kHz - 1.5 2.5 - 3 mA
VHS = VHB = 116.5V - 0.05 1 - 10 µA
f = 500kHz - 0.7 - - - mA

4 5.4 - 3 - V

- 5.8 7 - 8 V

- 0.4 - - - V

- 200 - 100 500 kΩ

7 7.3 7.8 6.5 8 V

- 0.5 - - - V

6.5 6.9 7.5 6 8 V

- 0.4 - - - V

I

= 100µA - 0.45 0.55 - 0.7 V

VDD-HB

I

= 100mA - 0.7 0.8 - 1 V

VDD-HB

I

= 100mA - 0.8 1 - 1.5 Ω

VDD-HB

ILO = 100mA - 0.25 0.3 - 0.4 V
ILO = -100mA, V

OHL

= VDD-V

LO

- 0.25 0.3 - 0.4 V
VLO = 0V - 2 - - - A
VLO = 12V - 2 - - - A

IHO = 100mA - 0.25 0.3 - 0.4 V
IHO = -100mA, V

OHH

= VHB-V

HO

- 0.25 0.3 - 0.4 V
VHO = 0V - 2 - - - A
VHO = 12V - 2 - - - A

3

HIP2100

Switching Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified

TJ = 25oC

- 20 35 - 45 ns

- 20 35 - 45 ns

- 20 35 - 45 ns

- 20 35 - 45 ns

- 2 8 - 10 ns

- 2 8 - 10 ns

----50ns

-10---ns

PARAMETERS SYMBOL

Lower Turn-Off Propagation Delay (LI Falling to LO Falling) t
Upper Turn-Off Propagation Delay (HI Falling to HO Falling) t
Lower Turn-On Propagation Delay (LI Rising to LO Rising) t
Upper Turn-On Propagation Delay (HI Rising to HO Rising) t
Delay Matching: Lower Turn-On and Upper Turn-Off t
Delay Matching: Lower Turn-Off and Upper Turn-On t
Either Output Rise/Fall Time t

LPHL
HPHL
LPLH
HPLH
MON

MOFF

RC,tFC

Either Output Rise/Fall Time (3V to 9V) tR,t
Either Output Rise Time Driving DMOS t
Either Output Fall Time Driving DMOS t
Minimum Input Pulse Width that Changes the Output t
Bootstrap Diode Turn-On or Turn-Off Time t

RD
FD
PW
BS

TEST

CONDITIONS

CL= 1000pF - 10 - - - ns
CL= 0.1µF - 0.5 0.6 - 0.8 us

F

CL= IRFR120 - 20 - - - ns
CL= IRFR120 - 10 - - - ns

Pin Descriptions

TJ = - 40oC

TO 125oC

UNITSMIN TYP MAX MIN MAX

PIN

NUMBER SYMBOL DESCRIPTION

1VDDPositive Supply to lower gate drivers. De-couple this pin to VSS (Pin 7). Bootstrap diode connected to HB (pin 2).
2 HB High-Side Bootstrap supply. Externalbootstrap capacitor is required. Connect positive side of bootstrap capacitor to

this pin. Bootstrap diode is on-chip.
3 HO High-Side Output. Connect to gate of High-Side power MOSFET.
4 HS High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap

capacitor to this pin.

5 HI High-Side input.
6 LI Low-Side input.
7VSSChip negative supply, generally will be ground.
8 LO Low-Side Output. Connect to gate of Low-Side power MOSFET.

Timing Diagrams

LI

LO

HO

HI

t

MON

t

MOFF

HI,

HO,

LO

LI

t

HPLH

t

LPLH

,

t

HPHL

t

LPHL

,

FIGURE 3.

4

FIGURE 4.

Typical Performance Curves

HIP2100

10

1

(mA)

HBO

, I

DDO

I

0.1

0.01
10 100 1000

FREQUENCY (kHz)

o

T = 150
T = 125oC

o

C

T = 25

o

T = -40

C

C

10

o

T = 150

1

(mA)

HBSO

I

0.1

0.01
10 100 1000

FREQUENCY (kHz)

T = -40oC
T = 125

o

T = 25

C

o

C

C

FIGURE 5. OPERATING CURRENT vs FREQUENCY FIGURE 6. LEVEL SHIFTER CURRENT vs FREQUENCY

(mV)

OHH

, V

OHL

V

500

400

300

200

VHB = VDD = 9V
VHB = VDD = 12V
VHB = VDD = 14V

VHB = VDD = 16.5V

(mV)

OLH

, V

OLL

V

500

400

300

200

VHB = VDD = 9V
VHB = VDD = 12V
VHB = VDD = 14V

VHB = VDD = 16.5V

100

-50 0 50 100 150
TEMPERATURE (oC)

100

-50 0 50 100 150
TEMPERATURE (oC)

FIGURE 7. HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE FIGURE 8. LOWLEVEL OUTPUT VOLTAGE vs TEMPERATURE

7.6

7.4
V

DDR

(mV)

7.2

DDR

, V

7.0

HBR

V

6.8

6.6

-50 0 50 100 150
TEMPERATURE (oC)

V

HBR

FIGURE 9. UNDERVOLTAGELOCKOUTTHRESHOLD vs

TEMPERATURE

0.54

0.5

V

V

DDH

HBH

0.46

(mV)

DDH

0.42

, V

HBH

0.38

V

0.34

0.3

-50 0 50 100 150
TEMPERATURE (oC)

FIGURE 10. UNDERVOLTAGELOCKOUTHYSTERESIS vs

TEMPERATURE

5

HIP2100

Typical Performance Curves

30

t

(ns)

HPHL

25

, t

HPLH

, t

LPHL

20

, t

LPLH

t

15

-50 0 50 100 150

HPHL

t

HPLH

t

LPHL

t

LPLH

TEMPERATURE (oC)

(Continued)

(A)

LO

, I

HO

I

2.5

2.0

1.5

1.0

0.5

0

V

HO

6

, VLO (V)

FIGURE 11. PROPAGATION DELAYS vs TEMPERATURE FIGURE 12. PULLUP CURRENT vs OUTPUT VOLTAGE

2.5

2.0

1

0.1

12108420

0.01

1.5

(A)

HO

, I

LO

I

1.0

0.5

0

V

LO

6

, VHO (V)

12108420

0.001

-4

1•10

FORWARD CURRENT (A)

-5

1•10

-6

1•10

0.70.60.50.40.3

FORWARD VOLTAGE (V)

FIGURE 13. PULLDOWN CURRENT vs OUTPUT VOLTAGE FIGURE 14. BOOTSTRAP DIODE I-V CHARACTERISTICS

60

50

IHBvs V

HB

40

IDD vs V

(µA)

30

HB

, I

DD

I

20

DD

0.8

10

0

0 5 10 15

VDD, VHB (V)

FIGURE 15. BIAS CURRENT vs VOLTAGE

6

HIP2100

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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