The HIN232-HIN241 family of RS-232 transmitters/receivers
interface circuits meet all ElA RS-232E and V.28 specifications,
and are particularly suited for those applications where ±12V is
not available. They require a single +5V power supply (except
HIN239) and feature onboard charge pump voltage converters
which generate +10V and
The family of devices offer a wide variety of RS-232
transmitter/rec eiver c ombinations to accomm odate various
applications (see Selection Table).
The drivers feature true TTL/ CMOS input compati bili ty, slewrate-limited output, and 300Ω power-off source imp edance.
The receivers can handle up to ±30V, and have a 3kΩ to 7kΩ
input impedance. The receivers also feature hysteresis to
greatly improve noise rejection.
HIN23 2C B0 to 7016 Ld SOICM16.3
HIN23 2C B- T0 to 70Tape and Ree l
HIN23 2C P0 to 7016 Ld PDIPE16.3
HIN232IB-40 to 8516 Ld SOICM16.3
HIN232IP-40 to 8516 Ld PDIPE16.3
HIN23 6C B0 to 7024 Ld SOICM24.3
HIN23 6C P0 to 7024 Ld PDIPE24.3
HIN236IB-40 to 8524 Ld SOICM24.3
HIN23 7C B0 to 7024 Ld SOICM24.3
HIN23 7C B- T0 to 70Tape and Ree l
HIN23 8C B0 to 7024 Ld SOICM24.3
TEMP.
RANGE (
o
C)PACKAGEPKG. NO.
Ordering Information (Continued)
PART
NUMBER
HIN23 8C B- T0 to 70Tape and Ree l
HIN23 8C P0 to 7024 Ld PDIPE24.3
HIN238IB-40 to 8524 Ld SOICM24.3
HIN23 9C B0 to 7024 Ld SOICM24.3
HIN23 9C B- T0 to 70Tape and Ree l
HIN23 9C P0 to 7024 Ld PDIPE24.3
HIN239IB-40 to 8524 Ld SOICM24.3
HIN24 0C N0 to 7044 Ld MQFPQ44.10 X1 0
HIN24 1C A0 to 7028 Ld SSOPM28.20 9
HIN24 1C B0 to 7028 Ld SOICM28.3
HIN241IB-40 to 8528 Ld SOICM28.3
V-Internally genera ted negative supply (-10V nomina l).
GNDGround lead. Connect to 0V.
C1+External capacitor (+ terminal) is connected to this lead.
C1-External capacitor (- terminal) is connected to this lead.
C2+External capacitor (+ terminal) is connected to this lead.
C2-External capacitor (- terminal) is connected to this lead.
T
IN
T
OUT
R
IN
R
OUT
EN
SHUTDOWNShutdown Input. With SHUTDOWN = 5V, the charge pump is disabled, the receiver outputs are in a high impedance state
NCNo Connect. No connection s are made t o these leads.
Power Supply Input 5V ±10%.
Transmitter Inputs. These leads accept TTL/CMOS levels. An internal 400kΩ pull-up resistor to V
Transmitter Outputs. These are RS-232 levels (nominally ±10V).
Receiver Inputs. These inputs accept RS-232 input levels. An internal 5kΩ pull-down resistor to GND is connected to each input.
Receiver Outputs. These are TTL/CMOS levels.
Enable input. This is an active low input which enables the receiver outputs. With EN = 5V, the outputs are placed in a high
impedance state.
and the transmitters are shut off.
is connected to each lead.
CC
2
Pinouts
HIN232 (PDIP, SOIC)
TOP VIEW
HIN232 thru HIN241
HIN236 (PDIP, SOIC)
TOP VIEW
NOTE 1
NOTE 1
T1
T2
R1
OUT
R2
OUT
24
T4
23
R2
22
R2
21
SHUTDOWN
20
EN
19
T4
18
T3
17
R3
R3
16
15
V-
14
C2-
13
C2+
OUT
IN
OUT
IN
IN
OUT
IN
T2
C1+
C2+
OUT
R2
V+
C1-
C2-
V-
1
1
2
3
4
5
6
7
8
IN
16
V
CC
15
GND
14
T1
OUT
13
R1
IN
12
R1
OUT
11
T1
IN
10
T2
IN
9
R2
OUT
T3
T1
T2
R1
OUT
OUT
OUT
R1
OUT
T2
T1
GND
V
CC
C1+
V+
C1-
2
3
4
IN
5
6
IN
7
IN
8
9
10
11
12
+5V
+
1µF
1
C1+
+
3
4
+
5
11
IN
10
IN
VOLTAGE DOUBLER
C1C2+
VOLTAGE INVERTER
C2-
+5V
400kΩ
+5V
400kΩ
16
V
CC
+5V TO 10V
+10V TO -10V
T1
T2
R1
R2
5kΩ
5kΩ
V+
V-
10
C1+
+
1µF
12
NOTE 1
+
2
1µF
6
T1
R1
R2
T2
T3
T4
OUT
OUT
IN
IN
IN
IN
NOTE 1
+
14
7
1312
89
T1
T2
R1
R2
OUT
OUT
IN
IN
C1-
13
C2+
+
14
C2-
+5V
7
+5V
6
+5V
181
+5V
1924
+5V
9
V
CC
+5V TO 10V
VOLTAGE DOUBLER
+10V TO -10V
VOLTAGE INVERTER
400kΩ
400kΩ
400kΩ
400kΩ
T1
T2
T3
T4
R1
R2
5kΩ
5kΩ
V+
V-
1µF
+
11
15
1µF
+
2
3
T1
OUT
T2
OUT
T3
OUT
T4
R1
R2
OUT
IN
IN
45
2322
15
NOTE:
1. Either 0.1µF or 1µF capacitors may be used. The V+ capacitor
may be terminated to V
CAUTION: Stress es abov e thos e lis ted in “ A bsolute Max imum R a tings” ma y cause per manen t dam age to th e de vice. This is a s tress on ly rating and ope rat ion of th e
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
2. Only HIN239. For V+ > 11V, C1 must be ≤0.1µF.
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3. θ
JA
o
C to 70oC
o
C to 85oC
(oC/W)
JA
o
C to 150oC
o
o
C
C
Electrical SpecificationsTest Conditions: V
= +5V ±10%, TA = Operating Temperature Range
CC
PARAMETERTEST CONDITIONSMINTYPMAXUNITS
SUPPLY CURRENTS
Power Supply Current, I
CC
V+ Power Supply Current, I
No Load, TA = 25oC
Shutdown Supply Current, I
CC
(SD)TA = 25oC-110µA
CC
No Load,
T
= 25oC
A
No Load,
TA = 25oC
LOGIC AND TRANSMITTER INPUTS, RECEIVER OUTPUTS
Input Logic Low, V
Input Logic High, V
Transmitte r Inp ut Pullu p Curre nt , I
lL
lH
P
TTL/CMOS Receiver Output Voltage Low, V
TTL/CMOS Receiver Output Voltage High, V
TIN, EN, Shutdown--0.8V
T
IN
EN
, Shutdown2.4--V
TIN = 0V-15200µA
OLIOUT
OHIOUT
= 1.6mA-0.10.4V
= -1.0mA3.54.6-V
RECEIVER INPUTS
RS-232 Input Voltage Range V
Receiver Input Impedance R
Receiver Input Low Threshold, V
Receiver Input High Threshold, V
Receiver Input Hysteresis V
RL = 3kΩ , CL = 2500 pF Measu red from +3 V to -3V or
-3V to +3V, 1 Transmitter Switching
Transm it t er Out p ut s, 3kΩ to Ground±5±9±10V
VCC = V+ = V- = 0V, V
T
S4
= +5V ±10%, TA = Operating Temperature Range (Continued)
CC
= 10pF, RL = 3kΩ , TA = 25oC (Note 4)--30V/µs
L
-3-V/µs
= ±2V300--Ω
OUT
shorted to GND-±10-mA
OUT
VOLTAGE INVERTER
C2
C2
+
S6
+
C2
-
-
S8
+
C4
-
GND
V- = -(V+)
GND
CC
S5
S7
V+ = 2V
+
C3
V
CC
RC
OSCILLATOR
FIGURE 1. CHARGE PUMP
Detailed Description
The HIN232 thru HIN241 family of RS-232
transmitters/receivers are powered by a single +5V power
supply (except HIN239), feature low power consumption, and
meet all ElA RS-232C and V.28 specifications. The circuit is
divided into three sections: The charge pump, transmitter, and
receiver.
Charge Pump
An equivalent circuit of the charge pump is illustrated in Figure
1. The charge pump contains two sections: the voltage
doubler and the voltage inverter. Each section is driven by a
two phase, internally generated clock to generate +10V and
-10V. The nominal clock frequency is 16kHz. During phase
one of the clock, capacitor C1 is charged to V
phase two, the voltage on C1 is added to V
signa l ac r oss C3 eq ual to t wic e V
also charged to 2V
, and then during phase two, it is
CC
. Duri ng ph a se one, C 2 is
CC
inverted with respect to ground to produce a signal across C4
equal to -2V
. The charge pump accepts input voltages up
CC
to 5.5V. The output impedance of the voltage doubler section
(V+) is approximately 200Ω, and the output impedance of the
voltage inverter section (V-) is approximately 450Ω. A typical
. During
CC
, producin g a
CC
appli catio n uses 1µF capacitors for C1-C4, however, the value
is not criti cal. Incr easi ng the v alues of C1 and C2 wi ll lowe r the
output impedance of the volta ge doubler an d inver ter,
increasing the values of the reservoir capacitors, C3 and C4,
lowers the ripple on the V+ and V- supplies.
During shutdown mode (HI N236, 240 and 241),
SHUTDOWN control li ne set to logic “1”, the charge pump is
turned off, V+ is pull ed down to V
, V- is pulled up to GND,
CC
and the supply current is reduced to less than 10µA. The
transmitt er outpu ts are di sabled and th e receiv er outpu ts are
placed in the high impedance state.
Transmitters
The transmitters are TTL/CMOS compatible inverters which
translate the inputs to RS-232 outputs. The input logic threshold
is about 26% of V
input results in a voltage of between -5V and V- at the output,
and a logic 0 results in a voltage between +5V and (V+ -0.6V).
Each transmitter input has an internal 400kΩ pullup resistor so
any unused input can be left unconnected and its output
remains in its low state. The output voltage swing meets t he
RS-232C specifications of ±5V minimum with the worst case
conditions of: all transmitters driving 3kΩ minimum load
, or 1.3V for VCC = 5V. A logic 1 at the
CC
8
HIN232 thru HIN241
impedance, V
= 4.5V, and maximum allowable operating
CC
temperature. The transmitters have an internally limited output
slew rate which is less than 30V/µs. The outputs are short
circuit protected and can be shorted to ground indefinitely. The
powered down output impedance is a minimum of 300Ω with
±2V applied to the outputs and V
V+
V
GND < T
CC
T
XIN
XIN
V-
400kΩ
< V
CC
FIGURE 2. TRANSMITTER
CC
= 0V.
300Ω
V- < V
T
OUT
TOUT
< V+
Receivers
The receiver in puts accept up to ±30V while presenting the
required 3kΩ to 7 k Ω input i mpedanc e even if the power is of f
T
IN
OR
R
IN
T
OUT
OR
R
OUT
t
PHL
= 0V). The receivers have a typical input threshold of
(V
CC
1.3V which is within the ±3V limits, known as the transition
region, of the RS-232 specifications. The receiver output is
0V to V
. The output will be low whenever the input is
CC
greater than 2.4V and high whenever the input is flo ati ng or
driven between +0.8V and -30V. The receivers feature 0.5V
hysteresis to improve noise reject ion. The receiver Enable
, when set to logic “1”, (HI N 236, 239, 240, and 241)
line EN
disables the receiver outputs, pl acing them in the high
impedance mode. The recei ver outputs are also pl aced in
the high impedance st ate when in shutdown mode.
FIGURE 7. GENERAL TEST CIRCUITFIGURE 8. POWER-OFF SOURCE RESISTANCE
Applications
The HIN2XX may be used for all RS-232 data terminal and
communication links. It is particularly useful in applications
where ±12V power supplies are not available for
conventional RS-232 interface circuits. The applicati ons
presented represent typical interface configurations.
A simple duplex RS-232 port with CTS/RTS handshaking is
illustrat ed in Fi gure 9. Fixed output signals such as DTR
(data terminal ready) and DSRS (data signaling rate select)
is generated by drivi ng them through a 5kΩ resist or
connected to V+.
In applications requiring four RS-232 i nputs and outputs
(Figure 10), note that each circuit requires two charge pump
capacitors (C1 and C2) but can share common reservoir
capacitors (C3 and C4). The benefit of sharing common
reservoir capacitors is the elimination of two capacitors and
the reduction of the charge pump source impedance which
effectiv ely increases the outpu t swi ng of the transmitters.
CONFIGURATION
TTL/CMOS
INPUTS AND
OUTPUTS
C1
1µF
C2
1µF
+5V
RTS
RD
CTS
TD
16
1
+
3
-
+
-
HIN232
4
5
T1
11
10
12
R2
9
R1
T2
-
+
DTR (20) DATA
2
6
-
+
14
TD (2) TRANSMIT DATA
7
RTS (4) REQUEST TO SEND
13
RD (3) RECEIVE DATA
8
CTS (5) CLEAR TO SEND
SIGNAL GROUND (7)15
TERMINAL READY
DSRS (24) DATA
SIGNALING RATE
SELECT
RS-232
INPUTS AND OUTPUTS
FIGURE 9. SIMPLE DUPLEX RS-232 PORT WITH CTS/RTS
HANDSHAKING
10
HIN232 thru HIN241
TTL/CMOS
INPUTS AND
OUTPUTS
TTL/CMOS
INPUTS AND
OUTPUTS
C1
1µF
TD
RTS
RD
CTS
2µF
C1
1µF
DTR
DSRS
DCD
R1
1
+
-
C4
+
+
-
HIN232
3
T1
11
10
12
R2
9
-
V- V+
6
HIN232
1
3
T1
11
10
12
R2
9
R1
R1
T2
T2
4
+
C2
5
1µF
-
14
TD (2) TRANSMIT DATA
7
RTS (4) REQUEST TO SEND
13
RD (3) RECEIVE DATA
8
CTS (5) CLEAR TO SEND
15
16
26
C3
+
2µF
2
16
4
+
C2
5
1µF
-
14
DTR (20) DATA TERMINAL READY
7
DSRS (24) DATA SIGNALING RATE SELECT
13
DCD (8) DATA CARRIER DETECT
8
R1 (22) RING INDICATOR
+5V
-
RS-232
INPUTS AND OUTPUTS
SIGNAL GROUND (7)15
FIGURE 10. COMBINING TWO HIN232s FOR 4 PAIRS OF RS-232 INPUTS AND OUTPUTS
11
Die Characteristics
HIN232 thru HIN241
DIE DIMENSIONS
160 mils x 140 mils
METALLIZATION
Type: Al
Thickness: 10k
ű1kÅ
SUBSTRATE POTENTIAL
V+
Metallization Mask Layout
R2
IN
R2
OUT
T2
IN
PASSIVATION
Type: Nitride over Silox
Nitride Thickness: 8k
Å
Silox Thickness: 7kÅ
TRANSISTOR COUNT
238
PROCESS
CMOS Metal Gate
HIN240
T4
T1
T2
OUT
OUT
T3
OUT
OUT
R3
IN
R3
OUT
T5
IN
SHUTDOWN
EN
R1
T1
OUT
R1
GND
V
CC
T5
R4
R4
T4
T3
R5
R5
OUT
IN
OUT
IN
IN
OUT
IN
IN
IN
12
C1+V+C1-
V-C2-C2+
Dual-In-Line Pla stic Pac kages (PDIP )
HIN232 thru HIN241
N
D1
-C-
E1
-B-
A1
A2
E
A
L
e
C
C
L
e
A
C
e
B
INDEX
AREA
BASE
PLANE
SEATING
PLANE
D1
B1
12 3N/2
-AD
e
B
0.010 (0.25)C AMBS
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbol s are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated in JEDEC sea ting plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E andare measur ed wit h the lea ds con str ained t o be per pendi c-
7. e
e
A
ular to dat u m .
and eC are measu red at the l ead tip s wi th the l eads uncon strai ned.
B
e
must be zero or greater.
C
-C-
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner lea ds (1, N, N /2 and N/2 + 1) fo r E8. 3, E1 6. 3, E1 8. 3, E2 8. 3 ,
E42.6 w ill ha ve a B1 di men si on of 0 .0 30 - 0. 04 5 in ch ( 0 .76 - 1.14 mm) .
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbol s are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
4. Dimensio ns A, A1 and L ar e meas ur e d wit h the pack ag e sea ted in
JEDEC seating pl ane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E andare measured with the leads constrained to be perpendic-
7. e
e
A
ular to dat u m .
and eC are meas ur e d at th e lead t ip s wi t h th e l ea ds un const r ain ed .
B
e
must be zero or greater.
C
-C-
8. B1 maxim um dime ns io ns do n ot in cl ud e da mbar prot r usi ons . Damba r
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner lea ds (1, N, N /2 and N/2 + 1) fo r E8. 3, E1 6. 3, E1 8. 3, E2 8. 3 ,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
1. Symbol s are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimensio n “ D” does no t in cl ud e mold fl ash , pr ot rus io ns or ga t e bu rrs .
Mold fla sh, pr otru sio n an d gate burrs shal l not excee d 0. 15mm (0. 006
inch) per side.
4. Dimensio n “ E” doe s no t incl u de i nter l ea d fla sh or prot rus io ns . Int er lea d
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamf er on the body is opti on al . If it is no t pre sen t , a visua l in de x
feature must be located within the crosshat ched area .
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The le ad w id th “ B” , as meas ur ed 0 .36m m ( 0. 014 i nch ) or grea t er a bo ve
the seat in g p lane , sh all n ot e xce ed a ma xi mu m va lue o f 0.61 mm ( 0 .024
inch)
10. Contro lling di mensi on: MILLI METER. Conver ted inch dimensi ons are
not nec essarily exact.
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimensio n “D” does n ot incl ude mo ld flas h, pr otru sion s or gate burr s.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm
(0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and pr otrusi ons shall not exce ed 0.25mm (0.010 inch) per
side.
5. The chamfe r on th e body is op tio nal. If it is not pres ent, a vi sual index
feature must be located within the crosshat ched area .
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61m m (0.024 inch)
10. Contro lling d imens ion: MILLIMETER. Conver ted in ch dime nsio ns
are not necessarily exact.
1. Symbols ar e def ined in the “MO Serie s Symbol List ” in Sec tion 2. 2
of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimensio n “ D” does no t inc lu de m old f la sh, pro tru si on s or ga te
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.20m m (0. 0 07 8 in ch) per side .
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.20mm (0.0078 inch)
per side.
5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “B” does not include dambar protrusion. Allowable dambar pro trusion shall be 0 .1 3m m ( 0.0 05 inch) tot a l i n ex c es s o f “ B”
dimension at maximum mater ial condition.
10. Contro lling dime nsion: MILLIMETER. Converted inch dime nsions
are not necessarily exact.
M28.209 (JEDEC MO-150-AH ISSUE B)
28 LEAD SHRINK SMALL OUTLINE PLASTIC PACKAGE
INCHESMILLIMETERS
SYMBOL
A-0.078-2.00A10.002-0.05-A20.0650.0721.651.85-
B0.0090.0140.220.389
C0.0040.0090.090.25-
D0.3900.4139.9010.503
E0.1970.2205.005.604
e0.026 BSC0.65 BSC-
H0.2920.3227.408.20-
L0.0220.0370.550.956
N28287
o
α
0
o
8
o
0
o
8
Rev. 1 3/95
NOTESMINMAXMINMAX
-
18
HIN232 thru HIN241
Metric Plastic Quad Flatpack Packages (MQFP)
E
E1
0.40
0.016
0o MIN
0o-7
-H-
-A-
o
MIN
D
D1
-D-
Q44.10x10 (JEDEC MS-022AB ISSUE B)
44 LEAD METRIC PLASTIC QUAD FLATPACK PACKAGE
INCHESMILLIMETERS
SYMBOL
NOTESMINMAXMINMAX
A-0.096-2.45-
A10.0040.0100.100.25-
-B-
A20.0770.0831.952.10-
b0.0120.0180.300.456
b10.0120.0160.300.40-
D0.5150.52413.0813.323
D10.3890.3999.8810.124, 5
E0.5160.52313.1013.303
e
PIN 1
E10.3900.3989.9010.104, 5
L0.0290.0400.731.03-
N44447
e0 .03 2 BSC0. 80 BSC-
12o-16
A2
SEATING
PLANE
A
0.076
b1
0.003
-C-
b
o
A1
0.20
0.008
A-B SD SCM
NOTES:
1. Controlling dimension: MILLIMETER. Converted inch
dimensions are not necessarily exact.
2. All dimensions and tolerances per ANSI Y14.5M-1982.
3. Dimens ions D and E to be de ter mined at seat ing p lane .
4. Dimens ions D1 and E1 to be de ter mi ne d at da t um pl a ne
-H-
.
5. Dimens ions D1 an d E1 do no t i nclu de mol d pr otr u sion .
Rev. 2 4/9 9
-C-
Allowable protrusio n is 0.25mm (0.010 inch) per s ide.
0.13/0.17
o
L
12o-16
0.005/0.007
BASE METAL
WITH PLATING
0.13/0.23
0.005/0.009
6. Dimensio n b do es n ot i ncl ud e d amb ar p rot r us ion. A llow a ble
dambar protrusion shall be 0.08mm (0.003 inch) total.
7. “N” is the number of terminal positions.
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality cert if ications can be viewed at websit e www.intersil.com/quality/i so.asp
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.
Accordingly, the reader i s cauti oned to ver ify that data sheet s are c urrent before pl acing orders . Information f urnis hed by Intersil is beli eved to be acc urate and r eliabl e. However, no responsibility is assumed by Intersil or its subsi d iaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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