Intersil Corporation HI5735 Datasheet

January 1998
HI5735
12-Bit, 80 MSPS,
High Speed Video D/A Converter
Features
• Throughput Rate . . . . . . . . . . . . . . . . . . . . . . . 80 MSPS
• Low Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .650mW
• Integral Linearity Error . . . . . . . . . . . . . . . . . . 0.75 LSB
• Low Glitch Energy . . . . . . . . . . . . . . . . . . . . . . . .3.0pV-s
• Improved Hold Time . . . . . . . . . . . . . . . . . . . . . . 0.25ns
• Excellent Spurious Free Dynamic Range
Applications
• Professional Video
• Cable TV Headend Equipment
Pinout
(PDIP, SOIC)
TOP VIEW
Description
The HI5735 is a 12-bit, 80 MSPS, D/A converter which is implemented in the Intersil BiCMOS 10V (HBC-10) process. Operating from +5V and -5.2V, the converter provides
-20.48mA of full scale output current and includes an input data register and bandgap voltage reference. Low glitch energy and excellent frequency domain performance are achieved using a segmented architecture. The digital inputs are TTL/CMOS compatible and translated internally to ECL. All internal logic is implemented in ECL to achieve high switching speed with low noise. The addition of laser trim­ming assures 12-bit linearity is maintained along the entire transfer curve.
Ordering Information
TEMP.
PART NUMBER
HI5735KCP 0 to 70 28 Lead PDIP E28.6
HI5735KCB 0 to 70 28 Lead SOIC M28.3
HI5735
RANGE (oC) PACKAGE
PKG.
NO.
D11 (MSB)
D0 (LSB)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
D10
D9 D8 D7 D6 D5 D4 D3 D2 D1
NC NC
1 2 3 4 5 6 7 8
9 10 11 12 13 14
DGND
28 27
AGND
26
REF OUT
25
CTRL OUT
24
CTRL IN
23
R
22
AV
21
I
OUT
20
I
OUT
19
ARTN
18
DV
17
DGND
16
DV
15
CLOCK
1621
SET
EE
EE
CC
File Number 4133.3
Typical Application Circuit
0.01µF
+5V
V
CC
HI5735
HI5735
(16)
50
0.1µF
Functional Block Diagram
D11 D10
D9 D8 D7 D6 D5 D4 D3
D2 D1 D0
0.01µF
- 5.2V(DVEE)
D11 (MSB) (1) D10 (2) D9 (3) D8 (4) D7 (5) D6 (6) D5 (7) D4 (8) D3 (9) D2 (10)
D1 (11) D0 (LSB) (12)
CLK (15)
DGND (17, 28)
DV
(18)
EE
(24) CTRL IN
(25) CTRL OUT
(26) REF OUT
(21) I
OUT
(20) I
OUT
(23) R
SET
(19) ARTN
(27) AGND
(22) AV
EE
- 5.2V(AVEE)
0.1µF
-5.2V (AVEE)
64
64
976
0.01µF
D/A OUT
0.1µF
(LSB) D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
(MSB) D11
CLK
12-BIT
MASTER
REGISTER
AGND DVEEDGND V
AV
EE
DAT A
BUFFER/
LEVEL
SHIFTER
OVERDRIVEABLE
CC
UPPER
4-BIT
DECODER
VOLTAGE
REFERENCE
SLAVE
REGISTER
15 15
REF OUT
8 LSBs
CURRENT
CELLS
15 SWITCHED CURRENT
CELLS
REF CELL
R
SET
R2R
NETWORK
227 227
25
+
-
ARTN
I
OUT
I
OUT
CTRL IN
CTRL OUT
1622
HI5735
Absolute Maximum Ratings Thermal Information
Digital Supply Voltage VCC to DGND . . . . . . . . . . . . . . . . . . .+5.5V
Negative Digital Supply Voltage DVEE to DGND . . . . . . . . . . . -5.5V
Negative Analog Supply Voltage AVEE to AGND, ARTN . . . . . -5.5V
Digital Input Voltages (D11-D0, CLK) to DGND. . . . . DVCC to -0.5V
Internal Reference Output Current. . . . . . . . . . . . . . . . . . . . ±2.5mA
Voltage from CTRL IN to AVEE. . . . . . . . . . . . . . . . . . . . . 2.5V to 0V
Control Amplifier Output Current . . . . . . . . . . . . . . . . . . . . . ±2.5mA
Reference Input Voltage Range . . . . . . . . . . . . . . . . . -3.7V to AV
Analog Output Current (I
) . . . . . . . . . . . . . . . . . . . . . . . . .30mA
OUT
Operating Conditions
Temperature Range
HI5735BIx. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Thermal Resistance (Typical, Note 1) θJA (oC/W)
PDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Maximum Junction Temperature
Plastic Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC
EE
(SOIC - Lead Tips Only)
Electrical Specifications AV
PARAMETER TEST CONDITIONS
SYSTEM PERFORMANCE
Resolution 12 - - Bits Integral Linearity Error, INL (Note 4) (“Best Fit” Straight Line) - 0.75 1.5 LSB Differential Linearity Error, DNL (Note 4) - 0.5 1.0 LSB Offset Error, I Full Scale Gain Error, FSE (Notes 2, 4) - 1 10 % Offset Drift Coefficient (Note 3) - - 0.05 µA/oC Full Scale Output Current, I Output Voltage Compliance Range (Note 3) -1.25 - 0 V
DYNAMIC CHARACTERISTICS
Throughput Rate (Note 5) 80 - - MSPS Output Voltage Full Scale Step
Settling Time, t Single Glitch Area, GE (Peak) RL = 50(Note 3) - 5 - pV-s Doublet Glitch Area, (Net) - 3 - pV-s Output Slew Rate RL = 50Ω,DAC Operating in Latched Mode
Output Rise Time RL = 50Ω,DAC Operating in Latched Mode
Output Fall Time RL = 50Ω,DAC Operating in Latched Mode
Differential Gain RL = 50 (Note 3) - 0.15 - % Differential Phase RL = 50 (Note 3) - 0.07 - Deg
OS
SETT
FS
Full Scale
, DVEE = -4.94 to -5.46V, VCC = +4.75 to +5.25V, V
EE
TA = 25oC for All Typical Values
(Note 4) - 20 75 µA
To ±0.5 LSB Error Band RL = 50 (Note 3)
(Note 3)
(Note 3)
(Note 3)
REF
= Internal
HI5735BI
TA = 0oC TO 70oC
UNITSMIN TYP MAX
- 20.48 - mA
-20- ns
- 1,000 - V/µs
- 675 - ps
- 470 - ps
1623
HI5735
Electrical Specifications AV
, DVEE = -4.94 to -5.46V, VCC = +4.75 to +5.25V, V
EE
REF
= Internal
TA = 25oC for All Typical Values (Continued)
HI5735BI
TA = 0oC TO 70oC
PARAMETER TEST CONDITIONS
Spurious Free Dynamic Range to Nyquist (Note 3)
f
CLK
f
CLK
= 40MHz, f = 80MHz, f
= 2.02MHz, 20MHz Span - 70 - dBc
OUT
= 2.02MHz, 40MHz Span - 70 - dBc
OUT
UNITSMIN TYP MAX
REFERENCE/CONTROL AMPLIFIER
Internal Reference Voltage, V
REF
(Note 4) -1.27 -1.23 -1.17 V Internal Reference Voltage Drift (Note 3) - 50 - µV/oC Internal Reference Output Current Sink/Source
(Note 3) -125 - +50 µA Capability
Internal Reference Load Regulation I
REF
= 0 to I
= -125µA - 50 - µV
REF
Input Impedance at REF OUT pin (Note 3) - 1.4 - k Amplifier Large Signal Bandwidth (0.6V Amplifier Small Signal Bandwidth (0.1V
) Sine Wave Input, to Slew Rate Limited (Note 3) - 3 - MHz
P-P
) Sine Wave Input, to -3dB Loss (Note 3) - 10 - MHz
P-P
Reference Input Impedance (Note 3) - 12 - k Reference Input Multiplying Bandwidth (CTL IN) RL = 50, 100mV Sine Wave, to -3dB Loss at
I
(Note 3)
OUT
- 200 - MHz
DIGITAL INPUTS (D9-D0, CLK, INVERT) Input Logic High Voltage, V Input Logic Low Voltage, V Input Logic Current, I Input Logic Current, I
IH IL
Digital Input Capacitance, C
IH
IL
IN
(Note 4) 2.0 - - V
(Note 4) - - 0.8 V
(Note 4) - - 400 µA
(Note 4) - - 700 µA
(Note 3) - 3.0 - pF
TIMING CHARACTERISTICS
Data Setup Time, t Data Hold Time, t
SU
HLD
Propagation Delay Time, t CLK Pulse Width, t
PW1
, t
PD
PW2
See Figure 1 (Note 3) 3.0 2.0 - ns
See Figure 1 (Note 3) 0.5 0.25 - ns
See Figure 1 (Note 3) - 4.5 - ns
See Figure 1 (Note 3) 3.0 - - ns
POWER SUPPLY CHARACTERISITICS
I
EEA
I
EED
I
CCD
(Note 4) - 42 50 mA
(Note 4) - 70 85 mA
(Note 4) - 13 20 mA Power Dissipation (Note 4) - 650 - mW Power Supply Rejection Ratio VCC±5%, VEE±5% - 5 - µA/V
NOTES:
2. Gain Error measured as the error in the ratio between the full scale output current and the current through R
(typically 1.28mA). Ideally
SET
the ratio should be 16.
3. Parameter guaranteed by design or characterization and not production tested.
4. All devices are 100% tested at 25oC. 100% production tested at temperature extremes for military temperature devices, sample tested
for industrial temperature devices.
5. Dynamic Range must be limited to a 1V swing within the compliance range.
1624
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