Single 16 and 8, Differential 8-Channel
and 4-Channel CMOS Analog MUXs with
Active Overvoltage Protection
The HI-546, HI-547, HI-548 and HI-549 are analog
multiplexers with active overvoltage protection and
guaranteed r
exceed either power supply without damaging the device or
disturbing the signal path of other channels. Active
protection circuitry assures that signal fidelity is maintained
even under fault conditions that would destroy other
multiplexers.
Analog inputs can withstand constant 70V
±15V supplies. Digital inputs will also sustain continuous
faults up to 4V greater than either supply. In addition, signal
sources are protected from short circuiting should
multiplexer supply loss occur. Each input presents 1kΩ of
resistance under this condition. These features make the
HI-546, HI-547, HI-548 and HI-549 ideal for use in systems
where the analog inputs originate from external equipment
or separately powered circuitry. All devices are fabricated
with 44V Dielectrically Isolated CMOS technology. The
HI-546 is a single 16-Channel, the HI-547 is an 8-Channel
differential, the HI-548 is a single 8-Channel and the HI-549
is a 4-Channel differential device. If input overvoltage
protection is not needed the HI-506/507/508/509
multiplexers are recommended. For further information see
Application Notes AN520 and AN521.
HI1-0546-5HI1-546-50 to 7528 Ld CERDIP F28.6
HI1-0546-2HI1-546-2-55 to 125 28 Ld CERDIP F28.6
HI3-0546-5HI3-546-50 to 7528 Ld PDIPE28.6
HI4P0546-5HI4P546-50 to 7528 Ld PLCCN28.45
HI4P0546-5Z
(Note)
HI4P546-5Z0 to 7528 Ld PLCC
(Pb-free)
HI9P0546-9**HI9P546-9-40 to 85 28 Ld SOICM28.3
HI9P0546-9Z**
(Note)
HI9P546-9Z-40 to 85 28 Ld SOIC
(Pb-free)
HI1-0547-5HI1-547-50 to 7528 Ld CERDIP F28.6
HI3-0547-5HI3-547-50 to 7528 Ld PDIPE28.6
HI3-0547-5Z
(Note)
HI3-0547-5Z0 to 7528 Ld PDIP*
(Pb-free)
HI4P0547-5HI4P547-50 to 7528 Ld PLCCN28.45
HI4P0547-5Z
(Note)
HI4P547-5Z0 to 7528 Ld PLCC
(Pb-free)
HI9P0547-9HI9P547-9-40 to 85 28 Ld SOICM28.3
HI9P0547-9Z
(Note)
HI9P547-9Z-40 to 85 28 Ld SOIC
(Pb-free)
HI1-0548-2HI1-548-2-55 to 125 16 Ld CERDIP F16.3
HI1-0548-5HI1-548-50 to 7516 Ld CERDIP F16.3
HI3-0548-5HI3-548-50 to 7516 Ld PDIPE16.3
HI4P0548-5HI4P548-50 to 7520 Ld PLCCN20.35
PKG.
DWG. #
N28.45
M28.3
E28.6
N28.45
M28.3
Ordering Information (Continued)
TEMP.
PART
NUMBER
PART
MARKING
RANGE
o
C)PACKAGE
(
HI9P0548-5**HI9P548-50 to 7516 Ld SOICM16.15
HI9P0548-5Z**
(Note)
HI9P548-5Z0 to 7516 Ld SOIC
(Pb-free)
HI9P0548-9HI9P548-9-40 to 85 16 Ld SOICM16.15
HI9P0548-9Z
(Note)
HI9P548-9Z-40 to 85 16 Ld SOIC
(Pb-free)
HI1-0549-2HI1-549-2-55 to 125 16 Ld CERDIP F16.3
HI3-0549-5HI3-549-50 to 7516 Ld PDIPE16.3
HI4P0549-5HI4P549-50 to 7520 Ld PLCCN20.35
HI4P0549-5Z
(Note)
HI4P549-5Z0 to 7520 Ld PLCC
(Pb-free)
HI9P0549-9HI9P549-9-40 to 85 16 Ld SOICM16.15
HI9P0549-9Z
(Note)
HI9P549-9Z-40 to 85 16 Ld SOIC
(Pb-free)
*Pb-free PDIPs can be used for through hole wave solder processing
only. They are not intended for use in Reflow solder processing
applications.
**Add “96” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
PKG.
DWG. #
M16.15
M16.15
N20.35
M16.15
Pinouts
ADDRESS A
HI-546 (CERDIP, PDIP, SOIC)
TOP VIEW
+V
SUPPLY
NC
NC
IN 16
IN 15
IN 14
IN 13
IN 12
IN 11
IN 10
IN 9
GND
V
REF
1
2
3
4
5
6
7
8
9
10
11
12
13
14
3
HI-547 (CERDIP, PDIP, SOIC)
TOP VIEW
28
OUT
28
-V
27
SUPPLY
26
IN 8
25
IN 7
24
IN 6
IN 5
23
IN 4
22
21
IN 3
20
IN 2
19
IN 1
ENABLE
18
ADDRESS A
17
16
ADDRESS A
ADDRESS A
15
+V
SUPPLY
0
1
2
OUT B
NC
IN 8B
IN 7B
IN 6B
IN 5B
IN 4B
IN 3B
IN 2B
IN 1B
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied .
NOTE:
1. θ
is measured with the component mounted on an evaluation PC board in free air.
Power Dissipation, P
Current, I+Note 7Full-0.52.0-0.52.0mA
Current, I-Note 7Full-0.021.0-0.021.0mA
NOTES:
2. V
OUT
3. 10nA is the practical lower limit for high speed measurement in the production test environments.
4. Analog Overvoltage = ±33V.
5. Digital input leakage is primarily due to the clamp diodes (see Schematic). Typical leakage is less than 1nA at 25
= 0.8V, RL = 1K, CL = 15pF, VS = 7V
6. V
EN
7. V
, VA = 0V or 4V.
EN
8. To drive from DTL/TTLCircuits, 1kΩ pull-up resistors to +5V supply are recommended.
FIGURE 2A. LEAKAGE CURRENT vs TEMPERATUREFIGURE 2B. I
10
TEST CIRCUIT (NOTE 9)
D(OFF)
EN
OUT
A
+0.8V
I
D(OFF)
±
10V
HI-546, HI-547, HI-548, HI-549
www.BDTIC.com/Intersil
T est Circuits and W avef orms T
I
A
S(OFF)
±10V
FIGURE 2C. I
±
10V
TEST CIRCUIT (NOTE 9)FIGURE 2D. I
S(OFF)
= 25oC, V
A
EN
= ±15V, VAH = 4V , VAL = 0.8V , V
SUPPLY
OUT
+0.8V
±
NOTE:
9. Two measurements per channel: ±10V and 10V. (Two measurements per device for I
±
FIGURE 2. LEAKAGE CURRENTS
18
ANALOG INPUT
15
12
9
6
3
ANALOG INPUT CURRENT (mA)
CURRENT (I
OUTPUT OFF LEAKAGE
CURRENT ID
IN
(OFF)
)
5
4
3
A
2
1
10V
I
IN
±V
IN
= Open, Unless Otherwise Specified (Continued)
REF
OUT
EN
4V
TEST CIRCUIT (NOTE 9)
D(ON)
: ±10V and 10V.)
D(OFF)
±
A
I
D(ON)
±10V
I
A
D(OFF)
0
1518212427303336
ANALOG INPUT OVERVOLTAGE (±V)
FIGURE 3A. ANALOG INPUT CURRENT AND OUTPUT OFF
OUTPUT OFF LEAKAGE CURRENT (nA)
0
FIGURE 3B. TEST CIRCUIT
LEAKAGE CURRENT vs ANALOG INPUT
OVER-VOLTAGE
FIGURE 3. ANALOG INPUT OVERVOLTAGE CHARA CTERISTICS
±14
±12
±10
SWITCH CURRENT (mA)
±8
±6
±4
±2
0
2468101214
0
VOLTAGE ACROSS SWITCH (±V)
-55oC
25oC
125oC
±V
IN
FIGURE 4A. ON CHANNEL CURRENT vs VOLTAGEFIGURE 4B. TEST CIRCUIT
FIGURE 4. ON CHANNEL CURRENT
A
11
HI-546, HI-547, HI-548, HI-549
www.BDTIC.com/Intersil
T est Circuits and W avef orms T
8
6
V
4
2
SUPPLY CURRENT (mA)
0
1K
TOGGLE FREQUENCY (Hz)
SUPPLY
V
= ± 10V
SUPPLY
10K100K1M10M
= ± 15V
= 25oC, V
A
= ±15V, VAH = 4V , VAL = 0.8V , V
SUPPLY
= Open, Unless Otherwise Specified (Continued)
REF
A
V+
A
3
HI-546
2
1
0
GND
†
THRU
IN 15
IN 16
V-
A
A
50Ω
V
A
+4V
Similar connection for HI-547/HI-548/HI-549.
†
A
A
EN
+15V/+10V
+I
IN 1
IN 2
OUT
-I
-15V/-10V
FIGURE 5A. SUPPLY CURRENT vs TOGGLE FREQUENCYFIGURE 5B. TEST CIRCUIT
FIGURE 5. DYNAMIC SUPPLY CURRENT
V+
IN 2 THRU
IN 15
HI-546
†
IN 16
OUT
V-
+15V
IN 1
-15V
900
800
700
600
500
ACCESS TIME (ns)
400
300
3
VA INPUT
V
= OPEN FOR LOGIC HIGH LEVEL< 6V
REF
V
= LOGIC HIGH FOR LOGIC HIGH LEVELS > 6V
REF
579151311
4 6 8101214
LOGIC LEVEL (HIGH) (V)
2V/DIV.
S1 ONS16 ON
100ns/DIV.
V
REF
A
3
A
2
50Ω
V
A
OUTPUT
0.5V/DIV.
+4V
Similar connection for HI-547/HI-548/HI-549.
†
A
A
EN
1
0
GND
FIGURE 6A. ACCESS TIME vs LOGIC LEVEL (HIGH)FIGURE 6B. TEST CIRCUIT
SUPPLY
SUPPLY
±
10V
±10V/±5V
10V/±5V
10MΩ
±10V
10kΩ50pF
±
14pF
VA INPUT
2V/DIV.
S1 ON
+10V
50%
t
A
VAH = 4.0V
10%
ADDRESS
DRIVE (V
OUTPUT
A
-10V
)
0V
FIGURE 6C. MEASUREMENT POINTSFIGURE 6D. WAVEFORMS
FIGURE 6. ACCESS TIME
12
200ns/DIV.
OUTPUT
5V/DIV.
S16 ON
HI-546, HI-547, HI-548, HI-549
www.BDTIC.com/Intersil
T est Circuits and W avef orms T
A
3
HI-546
†
A
2
50Ω
V
A
+4V
†
Similar connection for HI-547/HI-548/HI-549
A
A
EN
1
0
GND
FIGURE 7A. TEST CIRCUITFIGURE 7B. MEASUREMENT POINTS
IN 1
IN 2 THRU
IN 15
IN 16
OUT
1kΩ
= 25oC, V
A
= ±15V, VAH = 4V , VAL = 0.8V , V
SUPPLY
+5V
V
OUT
50pF
= Open, Unless Otherwise Specified (Continued)
REF
VAH = 4V
ADDRESS
t
OPEN
DRIVE (V
0V
50%50%
)
A
OUTPUT
A
3
HI-546
†
A
2
IN 2 THRU
A
1
A
0
EN
V
A
†
Similar connection for HI-547/HI-548/HI-549
50Ω
GND
FIGURE 8A. TEST CIRCUITFIGURE 8B. MEASUREMENT POINTS
13
IN 1
IN16
OUT
FIGURE 7C. WAVEFORMS
FIGURE 7. BREAK-BEFORE-MAKE DELAY
+10V
V
OUT
1kΩ
50pF
50%
t
ON(EN)
VAH = 4V
90%
50%
t
OFF(EN)
ENABLE DRIVE
(VA)
0V
OUTPUT
10%
0V
HI-546, HI-547, HI-548, HI-549
www.BDTIC.com/Intersil
T est Circuits and W avef orms T
= 25oC, V
A
DISABLED
= ±15V, VAH = 4V , VAL = 0.8V , V
SUPPLY
ENABLE
DRIVE
2V/DIV.
OUTPUT
2V/DIV.
ENABLED (S1 ON)
100ns/DIV.
FIGURE 8C. WAVEFORMS
FIGURE 8. ENABLE DELAYS
= Open, Unless Otherwise Specified (Continued)
REF
14
Die Characteristics
www.BDTIC.com/Intersil
HI-546, HI-547, HI-548, HI-549
DIE DIMENSIONS:
83.9 mils x 159 mils
METALLIZATION:
Type: CuAl
Thickness: 16k
ű2kÅ
SUBSTRATE POTENTIAL (NOTE):
-V
SUPPLY
NOTE: The substrate appears resistive to the -V
conductor at -V
SUPPLY
potential.
Metallization Mask Layouts
HI-546HI-547
EN
(18)(17)(16) (15)(13)(12)
A
0
A
A
2
1
A
(14)
V
REF
3
PASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5kű1kÅ
SiloxThickness: 12kű2kÅ
WORST CASE CURRENT DENSITY:
5
2
1.4 x 10
A/cm
TRANSISTOR COUNT:
485
PROCESS:
CMOS-DI
terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
SUPPLY
NC
GND
A
EN
(18)(17)(16) (15)
A
A
0
1
2
V
REF
(14)
(13)(12)
GND
IN 1
(19)
IN 2
(20)
IN 3
(21)
IN 4
(22)
IN 5
(23)
IN 6
(24)
IN 7
(25)
IN 8
(26)
V- (27)+V (1)NC (2)
OUT (28)
IN 9
(11)
IN 10
(10)
IN 11
(9)
IN 12
(8)
IN 13
(7)
IN 14
(6)
IN 15
(5)
IN 16
(4)
IN 1A
(19)
IN 2A
(20)
IN 3A
(21)
IN 4A
(22)
IN 5A
(23)
IN 6A
(24)
IN 7A
(25)
IN 8A
(26)
V- (27)+V (1)OUT B(2)
OUT A (28)
IN 1B
(11)
IN 2B
(10)
IN 3B
(9)
IN 4B
(8)
IN 5B
(7)
IN 6B
(6)
IN 7B
(5)
IN 8B
(4)
15
Die Characteristics
www.BDTIC.com/Intersil
HI-546, HI-547, HI-548, HI-549
DIE DIMENSIONS:
83 mils x 108 mils
METALLIZATION:
Type: CuAl
Thickness: 16k
ű2kÅ
SUBSTRATE POTENTIAL (NOTE):
-V
SUPPLY
NOTE: The substrate appears resistive to the -V
conductor at -V
SUPPLY
potential.
Metallization Mask Layouts
HI-548HI-549
IN 6 IN 7 IN 8OUTIN 4 IN 3
(11) (10) (9)(8)(7)(6)
PASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5kű1kÅ
SiloxThickness: 12kű2kÅ
WORST CASE CURRENT DENSITY:
5
1.4 x 10
A/cm
TRANSISTOR COUNT:
253
PROCESS:
CMOS-DI
terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
SUPPLY
IN 3B IN 4B OUT BOUT A IN 4AIN 3A
(11) (10)(9)(8)(7)(6)
IN 5
(12)
+V
(13)
GND
(14)
A
2
(15)(16) (1)
A
1
IN 2
(5)
IN 1
(4)
-V
(3)
A
EN
0
(2)
IN 2B
(12)
IN 1B
(13)
+V
(14)
GND
(15)(16) (1)
16
IN 2A
(5)
IN 1A
(4)
-V
(3)
A
A
1
EN
0
(2)
HI-546, HI-547, HI-548, HI-549
www.BDTIC.com/Intersil
17
HI-546, HI-547, HI-548, HI-549
www.BDTIC.com/Intersil
Ceramic Dual-In-Line Frit Seal Packages (CERDIP)
LEAD FINISH
c1
-A-
-B-
bbbC A - B
S
BASE
PLANE
SEATING
PLANE
S1
b2
b
cccC A - BMD
D
A
A
e
S
S
NOTES:
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
-DBASE
E
D
S
S
Q
A
-CL
METAL
b1
M
(b)
SECTION A-A
α
(c)
M
eA
eA/2
aaaCA - B
M
c
D
S
S
F28.6 MIL-STD-1835 GDIP1-T28 (D-10, CONFIGURATION A)
1. Controlling dimension: INCH. Converted millimeter dimensions are
not necessarily exact.
2. Dimensions and tolerancing per ANSI Y14.5M-1982.
3. Dimensions D1 and E1 do not include mold protrusions. Allowable
mold protrusion is 0.010 inch (0.25mm) per side. Dimensions D1
and E1 include mold mismatch and are measured at the extreme
material condition at the body parting line.
4. To be measured at seating plane contact point.
5. Centerline to be determined where center leads exit plastic body.
1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded
area shown. The manufacturer’s identification shall not be used
as a pin one identification mark.
2. The maximum limits of lead dimensions b and c or M shall be
measured at the centroid of the finished lead surfaces, when
solder dip or tin plate lead finish is applied.
3. Dimensions b1 and c1 apply to lead base metal only. Dimension
M applies to lead plating and finish thickness.
4. Corner leads (1, N, N/2, and N/2+1) may be configured with a
partial lead paddle. For this configuration dimension b3 replaces
dimension b2.
5. This dimension allows for off-center lid, meniscus, and glass
overrun.
6. Dimension Q shall be measured from the seating plane to the
base plane.
7. Measure dimension S1 at all four corners.
8. N is the maximum number of terminal positions.
9. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
10. Controlling dimension: INCH.
-DBASE
E
D
S
S
Q
A
-CL
METAL
b1
M
(b)
SECTION A-A
α
(c)
M
eA
eA/2
aaaCA - B
M
c
D
S
S
F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
1. Controlling dimension: INCH. Converted millimeter dimensions are
not necessarily exact.
2. Dimensions and tolerancing per ANSI Y14.5M-1982.
3. Dimensions D1 and E1 do not include mold protrusions. Allowable
mold protrusion is 0.010 inch (0.25mm) per side. Dimensions D1
and E1 include mold mismatch and are measured at the extreme
material condition at the body parting line.
4. To be measured at seating plane contact point.
-C-
5. Centerline to be determined where center leads exit plastic body.
6. “N” is the number of terminal positions.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted b y implica tion or ot herw ise un der any patent or patent rights of Intersil or its subsidi aries.
For information regarding Intersil Corporation and its products, see www.intersil.com
24
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