Intersil Corporation HI-307, HI-303, HI-301 Datasheet
TM
HI-301 thru HI-307
Data Sheet March 2000
CMOS Analog Switches
The HI-301 thru HI-307 series of switches are monolithic
devices fabricated using CMOS technology and the Intersil
dielectric isolation process. These switches feature break
before-make switching, low and nearly constant ON
resistance over the full analog signal range, and low power
dissipation, (a few mW for the Hl-301 and HI-303, a few
hundred mW for the HI-307).
The HI-301 and HI-303 are TTL compatible and havealogic
“0” condition with an input less than 0.8V and a logic “1”
condition with an input greater than 4V. The HI-307 switches
are CMOS compatible and have a low state with an input
less than 3.5V and a high state with an input greater than
11V. (See pinouts for switchconditionswithalogic“1” input.)
Ordering Information
PART
NUMBER
HI9P0301-5 0 to 75 14 Ld SOIC M14.15
HI1-0303-2 -55 to 125 14 Ld CERDIP F14.3
HI1-0303-5 0 to 75 14 Ld CERDIP F14.3
HI9P0303-5 0 to 75 14 Ld SOIC M14.15
HI9P0303-9 -40 to 85 14 Ld SOIC M14.15
HI1-0307-5 0 to 75 14 Ld CERDIP F14.3
TEMP.
RANGE (oC) PACKAGE PKG. NO.
File Number 3125.4
Features
• Analog Signal Range (±15V Supplies) . . . . . . . . . . ±15V
o
• Low Leakage at 25
• Low Leakage at 125
• Low On Resistance at 25
C . . . . . . . . . . . . . . . . . . . . . . . 40pA
o
C . . . . . . . . . . . . . . . . . . . . . . . 1nA
o
C . . . . . . . . . . . . . . . . . . . 35Ω
• Break-Before-Make Delay . . . . . . . . . . . . . . . . . . . . 60ns
• Charge Injection . . . . . . . . . . . . . . . . . . . . . . . . . . . 30pC
• TTL, CMOS Compatible
• Symmetrical Switch Elements
• Low Operating Power (Typ for Hl-301 and HI-303) . . 1.0mW
Applications
• Sample and Hold (i.e., Low Leakage Switching)
• Op Amp Gain Switching (i.e., Low On Resistance)
• Portable, Battery Operated Circuits
• Low Level Switching Circuits
• Dual or Single Supply Systems
Functional Diagram
S
IN
N
P
Pinouts Switch States Shown For A Logic “1” Input
SPST HI-301
(SOIC)
TOP VIEW
1
NC
2
D
1
3
NC
4
S
1
5
NC
6
IN
7
GND
LOGIC SW1 SW2
0 OFF ON
1 ON OFF
14
V+
13
D
2
12
NC
11
S
2
10
NC
9
NC
8
V-
DUAL SPDT HI-303 (CERDIP, SOIC)
HI-307 (CERDIP)
TOP VIEW
NC
IN
GND
1
2
S
3
3
D
3
4
D
1
5
S
1
6
1
7
14
V+
13
S
4
12
D
4
11
D
2
10
S
2
9
IN
2
8
V-
LOGIC SW1, SW2 SW3, SW4
0 OFF ON
1 ON OFF
D
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Schematic Diagrams
HI-301 thru HI-307
SWITCH CELL
A
V+
MN2BINMN3B
MP5B
MP4B
MP3B MP2B
MN1B
OUT
MN4B
MN6B
V+
LOGIC
GND
MP1B
A
V-
DIGITAL INPUT BUFFER AND LEVEL SHIFTER
D2A
200Ω
IN
D1A
V-
MP1A
MN1A
MP2A
MN2A
MP3A
MN3A
MN4A
MP4A
MP5A
MN5A
MP6A
MN6A
MP7A
MN7A
SWITCH CELL DRIVER
(ONE PER SWITCH CELL)
MP8A
A
A
MN8A
2
HI-301 thru HI-307
Absolute Maximum Ratings Thermal Information
Voltage Between Supplies (V+ to V-). . . . . . . . . . . . . . . .44V (±22V)
Digital Input Voltage. . . . . . . . . . . . . . . . . . . . . . (V+) +4V to (V-) -4V
Analog Input Voltage . . . . . . . . . . . . . . . . . . (V+) +1.5V to (V-) -1.5V
Typical Derating Factor . . . . . . . . . 1.5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Class 1
Operating Conditions
Temperature Range
HI-3XX-2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
HI-3XX-5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC
HI-3XX-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W)
CERDIP Package. . . . . . . . . . . . . . . . . 95 40
SOIC Package . . . . . . . . . . . . . . . . . . . 120 N/A
Maximum Junction Temperature
Ceramic Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175oC
Plastic Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range. . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications Supplies = +15V, -15V; V
HI-307: V
PARAMETER
- for Logic “1” = 11V, for Logic “0” = 3.5V, Unless Otherwise Specified
IN
= Logic Input. HI-301 and HI-303: VIN - for Logic “1” = 4V, for Logic “0” = 0.8V.
IN
TEMP
-2 -5, -9
(oC)
UNITSMIN TYP MAX MIN TYP MAX
DYNAMIC CHARACTERISTICS
Switch ON Time, tON (Note 13) 25 - 210 300 - 210 300 ns
Switch OFF Time, t
(Note 13) 25 - 160 250 - 160 250 ns
OFF
Switch ON Time, tON (Note 14) 25 - 160 250 - 160 250 ns
Switch OFF Time, t
Break-Before-Make Delay, t
(Note 14) 25 - 100 150 - 100 150 ns
OFF
OPEN
25 -60- -60-ns
Charge Injection Voltage, ∆V (Note 7) 25 - 3 - - 3 - mV
OFF Isolation (Note 6) 25 - 60 - - 60 - dB
Input Switch Capacitance, C
Output Switch Capacitance, C
Output Switch Capacitance, C
Digital Input Capacitance, C
IN
S(OFF)
D(OFF)
D(ON)
25 -16- -16-pF
25 -14- -14-pF
25 -35- -35-pF
25 - 5 - - 5 - pF
DIGITAL INPUT CHARACTERISTICS
Input Low Level, V
Input High Level, V
Input Low Level, V
Input High Level, V
Input Leakage Current (Low), I
Input Leakage Current (High), I
(Note 13) Full - - 0.8 - - 0.8 V
INL
(Note 13) Full 4 - - 4 - - V
INH
(Note 14) Full - - 3.5 - - 3.5 V
INL
(Note 14) Full 11 - - 11 - - V
INH
(Note 5) Full - - 1 - - 1 µA
INL
(Note 5) Full - - 1 - - 1 µA
INH
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range Full -15 - +15 -15 - +15 V
ON Resistance, rON (Note 2) 25 - 35 50 - 35 50 Ω
Full - 40 75 - 40 75 Ω
OFF Input Leakage Current, I
(Note 3) 25 - 0.04 1 - 0.04 5 nA
S(OFF)
Full - 1 100 - 0.2 100 nA
3
HI-301 thru HI-307
Electrical Specifications Supplies = +15V, -15V; V
HI-307: VIN - for Logic “1” = 11V, for Logic “0” = 3.5V, Unless Otherwise Specified (Continued)
PARAMETER
OFF Output Leakage Current, I
ON Leakage Current, I
POWER SUPPLY CHARACTERISTICS
Current, I+ (Notes 8, 13) 25 - 0.09 0.5 - 0.09 0.5 mA
Current, I- (Notes 8, 13) 25 - 0.01 10 - 0.01 100 µA
Current, I+ (Notes 9, 13) 25 - 0.01 10 - 0.01 100 µA
Current, I- (Notes 9, 13) 25 - 0.01 10 - 0.01 100 µA
Current, I+ (Notes 10, 14) 25 - 0.01 10 - 0.01 100 µA
Current, I- (Notes 10, 14) 25 - 0.01 10 - 0.01 100 µA
Current, I+ (Notes 11, 14) 25 - 0.01 10 - 0.01 100 µA
Current, I- (Notes 11, 14) 25 - 0.01 10 - 0.01 100 µA
NOTES:
2. VS = ±10V, I
3. VS = ±14V, VD = 14V.
4. VS = VD = ±14V.
5. The digital inputs are diode protected MOS gates and typical leakages of 1nA or less can be expected.
6. VS = 1V
7. VS=0V, CL=10nF, Logic Drive =5Vpulse (HI-301 - 303), 15Vpulse (HI-307). Switches are symmetrical;S and D may beinterchanged. Charge
Injection = Q = CL x ∆V.
8. VIN = 4V (one input, all other inputs = 0V).
9. VIN = 0.8V (all inputs).
10. VIN = 15V (all inputs).
11. VIN = 0V (all inputs).
12. To drive from DTL/TTL circuits, pullup resistors to +5V supply are recommended.
13. HI-301 thru HI-303 only.
14. HI-307 only.
OUT
, f = 500kHz, CL = 15pF, RL = 1K.
RMS
(Note 4) 25 - 0.03 1 - 0.03 5 nA
D(ON)
= 10mA. On resistance derived from the voltage measured across the switch under these conditions.
(Note 3) 25 - 0.04 1 - 0.04 5 nA
D(OFF)
= Logic Input. HI-301 and HI-303: VIN - for Logic “1” = 4V, for Logic “0” = 0.8V.
IN
TEMP
(oC)
Full - 1 100 - 0.2 100 nA
Full - 0.5 100 - 0.2 100 nA
Full - - 1 - - 1 mA
Full - - 100 - - - µA
Full - - 100 - - - µA
Full - - 100 - - - µA
Full - - 100 - - - µA
Full - - 100 - - - µA
Full - - 100 - - - µA
Full - - 100 - - - µA
-2 -5, -9
UNITSMIN TYP MAX MIN TYP MAX
4
Loading...