Intersil Corporation HGTP7N60B3D, HGT1S7N60B3DS Datasheet

HGTP7N60B3D, HGT1S7N60B3DS

Data Sheet January 2000

14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150

o

C at rated current. The IGBT is developmental type

o

TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49191.

Ordering Information

File Number 4413.2

Features

• 14A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T

= 150oC

J

• Short Circuit Rating

C

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

E

C

COLLECTOR

(FLANGE)

G

PART NUMBER PACKAGE BRAND

HGTP7N60B3D TO-220AB ALT G7N60B3D
HGT1S7N60B3DS TO-263AB G7N60B3D

NOTE: Whenordering, use theentirepart number.Addthe suffix9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.

G

JEDEC TO-263AB

COLLECTOR
(FLANGE)

E

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTP7N60B3D, HGT1S7N60B3DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Average Rectified Forward Current at TC = 152oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

F(AV)

CM

GES

GEM

14 A

7A
6A

56 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

60 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L
SC
SC

-55 to 150
260

2 µs

12 µs

o

C

o

C

NOTES:

1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 50Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

CES

TC = 25oC - - 100 µA
TC = 150oC - - 3.0 mA

Collector to Emitter Saturation Voltage V

CE(SAT)IC

= I

, VGE = 15V TC = 25oC - 1.8 2.1 V

C110

TC = 150oC - 2.1 2.4 V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC, RG = 50Ω,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)IC

d(ON)I

rI

d(OFF)I

fI

ON

OFF

= 250µA, VCE = V

GE

3.0 5.1 6.0 V

VGE = ±20V - - ±100 nA

VCE= 480V 42 - - A

VGE = 15V, L = 100µH

IC = I

VCE = 0. 5BV

= I

C110
C110

, VCE = 0.5 BV
,

CES

IGBT and Diode Both at TJ = 25oC,
ICE = I

, VCE = 0.8 BV

C110

VGE = 15V, RG= 50Ω, L = 2mH,
Test Circuit (Figure 19)

VCE= 600V 35 - - A

CES

- 7.7 - V
VGE = 15V - 23 28 nC
VGE = 20V - 30 37 nC

-26-ns

CES,

-21-ns

- 130 160 ns

-6080ns

- 160 200 µJ

- 120 200 µJ

2

HGTP7N60B3D, HGT1S7N60B3DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON

OFF

EC

rr

IGBT and Diode Both at TJ = 150oC
ICE = I

, VCE = 0.8 BV

C110

CES

,
VGE = 15V, RG= 50Ω, L = 2mH,
Test Circuit (Figure 19)

-24-ns

-22-ns

- 230 295 ns

- 120 175 ns

- 310 350 µJ

- 350 500 µJ
IEC= 7A - 1.85 2.2 V
IEC = 7A, dIEC/dt = 200A/µs--37ns
IEC = 1A, dIEC/dt = 200A/µs--32ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 2.1
Diode - - 3.0

NOTE:

3. Turn-OffEnergyLoss (E

) isdefinedas the integral oftheinstantaneous power loss startingatthe trailing edge of theinputpulse and ending

OFF

at the point wherethecollectorcurrent equals zero (ICE= 0A). All devicesweretestedper JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.

Typical Performance Curves Unless Otherwise Specified

o

C/W

o

C/W

16

14

12

10

8

6

4

, DC COLLECTOR CURRENT (A)

2

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DCCOLLECTOR CURRENT vs CASE

TEMPERATURE

V

= 15V

GE

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

200 3001000 400 500

TJ= 150oC, RG = 50Ω, VGE= 15V

600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3