Intersil Corporation HGTP7N60B3, HGTD7N60B3S, HGT1S7N60B3S Datasheet

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Data Sheet January 2000

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between

C and 150oC.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power suppliesanddriv ersfor solenoids, relays and contactors.

Formerly Developmental Type TA49190.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD7N60B3S TO-252AA G7N60B HGT1S7N60B3S TO-263AB G7N60B3

File Number 4412.2

Features

• 14A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC TO-220AB

COLLECTOR

(FLANGE)

JEDEC TO-263AB

= 150oC

HGTP7N60B3 TO-220AB G7N60B3

NOTE: When ordering,usethe entire part number.Add the sufﬁx9A to obtain the TO-252AAand TO-263AB variant in tape and reel, e.g., HGTD7N60B3S9A.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-252AA

COLLECTOR (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

14 A

56 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

60 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

ARV STG

L SC SC

100 mJ

-55 to 150 260

2 µs

12 µs

NOTES:

1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.

2. VCE = 360V, TJ = 125oC, RG = 50Ω.

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CESIC ECSIC

CES

= 250µA, VGE = 0V 600 - - V = 3mA, VGE= 0V 15 28 - V

VCE = BV

CES

TC = 25oC - - 100 µA TC = 150oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC

= I

C110

VGE = 15V

= 250µA, VCE = V

TC = 25oC - 1.8 2.1 V TC = 150oC - 2.1 2.4 V

3.0 5.1 6.0 V

VGE = ±20V - - ±100 nA

VCE= 480V 42 - - A RG = 50Ω VGE = 15V

VCE= 600V 35 - - A L = 100µH

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 4) E Turn-On Energy (Note 4) E Turn-Off Energy (Note 3) E

GEPIC

G(ON)IC

fI ON1 ON2 OFF

= I

, VCE = 0.5 BV

C110

= I

C110

VCE = 0. 5BV

CES

VGE = 15V - 23 28 nC VGE = 20V - 30 37 nC

IGBT and Diode Both at TJ = 25oC ICE = I

, VCE = 0.8 BV

C110

CES

, VGE = 15V, RG= 50Ω, L = 2mH Test Circuit (Figure 17)

- 7.7 - V

-26-ns

-21-ns

- 130 160 ns

-6080ns

-72-µJ

- 160 200 µJ

- 120 200 µJ

HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 4) E Turn-On Energy (Note 4) E Turn-Off Energy (Note 3) E Thermal Resistance Junction To Case R

ON1 ON2 OFF

θJC

IGBT and Diode Both at TJ = 150oC ICE = I

VGE = 15V, RG=50Ω, L = 2mH

, VCE = 0.8 BV

C110

Test Circuit (Figure 17)

CES

-24-ns

-22-ns

- 230 295 ns

- 120 175 ns

-80-µJ

- 310 350 µJ

- 350 500 µJ

- - 2.1

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the Turn-On loss of the IGBT only. E

ON1

is the Turn-On loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17.

Typical Performance Curves Unless Otherwise Speciﬁed

C/W

ON2

, DC COLLECTOR CURRENT (A)

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

= 15V

, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ= 150oC, RG = 50Ω, VGE= 15V

200 3001000 400 500

600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

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