Intersil Corporation HGTP7N60A4, HGTG7N60A4, HGTD7N60A4S, HGT1S7N60A4S Datasheet

TM

HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4,

HGTP7N60A4

Data Sheet June 2000

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and
HGTP7N60A4 are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49331.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD7N60A4S TO-252AA 7N60A4
HGT1S7N60A4S TO-263AB 7N60A4
HGTG7N60A4 TO-247 7N60A4
HGTP7N60A4 TO-220AB 7N60A4

NOTE: When ordering, use the entirepart number.Addthesuffix9A
to obtain the TO-252AA and TO-263AB variant in tape and reel,
e.g., HGTD7N60A4S9A.

File Number 4826.2

Features

• >100kHz Operation at 390V, 7A

• 200kHz Operation at 390V, 5A

• 600V Switching SOA Capability

• Typical Fall Time

. . . . . . . . . . . . . . . . . . . .75ns at T

• Low Conduction Loss

• Temperature Compensating SABER™ Model
www.intersil.com

Symbol

C

G

E

= 125oC

J

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB

E

C

G

COLLECTOR
(FLANGE)

JEDEC TO-252AA JEDEC TO-263AB

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR
(FLANGE)

G

E

E

C

COLLECTOR
(FLANGE)

COLLECTOR
(FLANGE)

G

2-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc. | 1-888-INTERSIL or 321-724-7143

HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

CM

GES

GEM

34 A
14 A
56 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V

Single Pulse Avalanche Energy at TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

AS

D

25mJ at 7A

125 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

300

260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 20 - - V
VCE = 600V TJ = 25oC - - 250 µA

= 125oC--2mA

T

J

= 7A,

VGE = 15V

TJ = 25oC - 1.9 2.7 V

= 125oC - 1.6 2.2 V

T

J

IC = 250µA, VCE = 600V 4.5 5.9 7.0 V
VGE = ±20V - - ±250 nA

= 150oC, RG = 25Ω, VGE = 15V

J

35 - - A

L = 100µH, VCE= 600V
Pulsed Avalanche Energy E
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

AS

GEP

g(ON)

rI

fI
ON1
ON2
OFF

ICE = 7A, L = 500µH25--mJ
IC = 7A, VCE = 300V - 9.0 - V
IC = 7A,

VCE = 300V
IGBT and Diode at TJ = 25oC

ICE = 7A
VCE = 390V
VGE = 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 20)

VGE = 15V - 37 45 nC
V

= 20V - 48 60 nC

GE

-11- ns

-11- ns

- 100 - ns

-45- ns

-55- µJ

- 120 150 µJ

-6075µJ

2-2

HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
ICE = 7A
VCE = 390V
VGE = 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 20)

-10- ns

-7-ns

- 130 150 ns

-7585ns

-50- µJ

- 200 215 µJ

- 125 170 µJ

- - 1.0

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneouspower loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

35

VGE= 15V

30

25

40

TJ= 150oC, RG = 25Ω, VGE= 15V, L = 100µH

30

o

C/W

ON2

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

200

100

f

= 0.05 / (t

MAX1

= (PD- PC) / (E

f

MAX2

PC = CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

f

30

(DUTY FACTOR = 50%)

R

= 1.0oC/W, SEE NOTES

ØJC

TJ= 125oC, RG = 25Ω, L = 2mH, VCE= 390V

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

)

TCV

o

75

C

15V

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

GE

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE = 390V, RG = 25Ω, TJ= 125oC

14

I

12

10

8

6

20510

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

t

10

11 12 15

VGE, GATE TO EMITTER VOLTAGE (V)

SC

t

SC

13 14

14016

120

100

80

60

40

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

20

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

2-3

HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4

Typical Performance Curves Unless Otherwise Specified (Continued)

30

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0 1.0

0.5 2.5

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

GE

TJ = 150oC

= 12V

TJ = 125oC

TJ = 25oC

1.5 2.0 3.0

30

DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0 1.0 1.5 2.0 3.00.5 2.5

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 125oC

TJ = 150oC TJ = 25oC

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

, TURN-ON ENERGY LOSS (µJ)

ON2

E

500

RG = 25Ω, L = 1mH, VCE = 390V

400

TJ = 125oC, VGE = 12V, VGE = 15V

300

200

100

0

0

ICE, COLLECTOR TO EMITTER CURRENT (A)

4268101214

TJ = 25oC, VGE = 12V, VGE = 15V

350

RG = 25Ω, L = 1mH, VCE = 390V

300

250

200

TJ = 125oC, VGE = 12V OR 15V

150

100

, TURN-OFF ENERGY LOSS (µJ)

50

OFF

E

0

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 25oC, VGE = 12V OR 15V

42 6 8 1012140

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

16

RG = 25Ω, L = 1mH, VCE = 390V

TJ = 25oC, VGE = 12V

14

12

, TURN-ON DELAY TIME (ns)

10

d(ON)I

t

8

ICE, COLLECTOR TO EMITTER CURRENT (A)

42 6 8 1012140

TJ = 125oC, VGE = 12V

TJ = 25oC, VGE = 15V

TJ = 125oC, VGE = 15V

FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT

2-4

FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT

40

RG = 25Ω, L = 1mH, VCE = 390V

TJ = 25oC, VGE= 12V, VGE= 15V

TJ = 125oC, VGE= 12V, VGE= 15V

42681012140

ICE, COLLECTOR TO EMITTER CURRENT (A)

, RISE TIME (ns)

rI

t

30

20

10

0

FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT