Intersil Corporation HGTP5N120CND, HGTG5N120CND, HGT1S5N120CNDS Datasheet

HGTG5N120CND, HGTP5N120CND,

HGT1S5N120CNDS

Data Sheet January 2000

25A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG5N120CND, HGTP5N120CND and
HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The IGBT
used is developmental type TA49309. The diode used in
anti-parallel is developmental type TA49058.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49307.

Ordering Information

PART NUMBER PACKAGE BRAND

File Number 4598.2

Features

• 25A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T

• Short Circuit Rating

• Low Conduction Loss

• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB ALTERNATE VERSION

E

C

COLLECTOR

(FLANGE)

G

= 150oC

J

HGTG5N120CND TO-247 5N120CND
HGTP5N120CND TO-220AB 5N120CND
HGT1S5N120CNDS TO-263AB 5N120CND

NOTE: When ordering,use theentirepart number. Addthe suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120CNDS9A.

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-263AB

G

E

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

E

C

COLLECTOR

(FLANGE)

G

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG5N120CND
HGTP5N120CND

HGT1S5N120CNDS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

25 A
12 A
40 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

167 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

o

C
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 25Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 1200 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 100 - µA
TC = 150oC--2mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 5.5A,

VGE = 15V

IC = 45µA, VCE = V

TC = 25oC - 2.1 2.4 V
TC = 150oC - 2.9 3.5 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI

ON

OFF

L = 200µH, V
IC = 5.5A, VCE = 0.5 BV
IC = 5.5A,

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC
ICE = 5.5A
VCE = 0.8 BV
VGE = 15V
RG= 25Ω
L = 5mH
Test Circuit (Figure 20)

CE(PK)

CES

CES

= 1200V

CES

VGE = 15V - 45 55 nC
VGE = 20V - 60 75 nC

6.0 7.0 - V

25 - - A

- 10.6 - V

-2230ns

-1216ns

- 180 250 ns

- 280 350 ns

- 400 500 µJ

- 640 700 µJ

2

HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON

OFF

EC

rr

IGBT and Diode at TJ = 150oC
ICE = 5.5A
VCE = 0.8 BV

CES

VGE = 15V

-2025ns

-1216ns

- 225 300 ns

RG= 25Ω
L = 5mH
Test Circuit (Figure 20)

- 350 400 ns

- 1 1.2 mJ

- 1 1.1 mJ
IEC = 5.5A - 2.4 3.3 V
IEC = 5.5A, dIEC/dt = 200A/µs - 48 60 ns
IEC = 1A, dIEC/dt = 200A/µs - 30 40 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.75
Diode - - 1.9

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous powerloss starting atthe trailing edgeof the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

25

20

15

10

5

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

GE

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

= 15V

35

TJ= 150oC, RG = 25Ω, VGE = 15V, L = 200µH

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3