Intersil Corporation HGTP5N120CN, HGT1S5N120CNS Datasheet

HGTP5N120CN, HGT1S5N120CNS

Data Sheet January 2000

25A, 1200V, NPT Series N-Channel IGBT

TheHGTP5N120CN andHGT1S5N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the

MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49309.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP5N120CN TO-220AB G5N120CN HGT1S5N120CNS TO-263AB G5N120CN

NOTE: Whenordering,usethe entire part number.Addthe sufﬁx 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S5N120CNS9A.

File Number 4596.2

Features

• 25A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Temperature Compensating SABER™ Model Thermal Impedance SPICE Model www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB ALTERNATE VERSION

COLLECTOR

(FLANGE)

= 150oC

Symbol

JEDEC TO-263AB

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

SABER™ is a trademark of Analogy, Inc.

HGTP5N120CN, HGT1S5N120CNS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTP5N120CN

HGT1S5N120CNS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

25 A 12 A 40 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

167 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

Forward Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

36 mJ

-55 to 150

C Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

pkg

SC SC

300 260

8 µs

15 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 25Ω.

CE(PK)

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CES

ECS

CES

IC = 250µA, VGE = 0V 1200 - - V IC = 10mA, VGE= 0V 15 - - V VCE = BV

CES

TC = 25oC - - 250 µA TC = 125oC - 100 - µA TC = 150oC--2mA

Collector to Emitter Saturation Voltage V

CE(SAT)IC

= 5.5A,

TC = 25oC - 2.1 2.4 V

VGE = 15V

TC = 150oC - 2.9 3.5 V Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

GE(TH)

GES

IC = 45µA, VCE = V

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

GEP

G(ON)

L = 200µH, V IC = 5.5A, VCE = 0.5 BV IC = 5.5A,

VCE = 0.5 BV

CE(PK)

CES

= 1200V

CES

VGE = 15V - 45 55 nC

VGE = 20V - 60 75 nC

6.0 7.0 - V

25 - - A

- 10.6 - V

HGTP5N120CN, HGT1S5N120CNS

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

IGBT and Diode at TJ = 25oC

-2230ns

ICE = 5.5A

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 4) E Current Turn-On Delay Time t

d(ON)I

ON1

ON2

OFF

VCE = 0.8 BV

CES

VGE = 15V RG= 25Ω L = 5mH Test Circuit (Figure 18)

IGBT and Diode at TJ = 150oC

-1216ns

- 180 250 ns

- 280 350 ns

- 220 - µJ

- 400 500 µJ

- 640 700 µJ

-2025ns

ICE = 5.5A

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 4) E Thermal Resistance Junction To Case R

ON1

ON2

OFF

θJC

VCE = 0.8 BV

CES

VGE = 15V RG= 25Ω L = 5mH Test Circuit (Figure 18)

-1216ns

- 225 300 ns

- 350 400 ns

- 220 - µJ

- 1 1.2 mJ

- 1 1.1 mJ

- - 0.75

NOTES:

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.

4. Turn-Off Energy Loss (E

) is definedastheintegralof the instantaneous power loss starting at the trailingedgeoftheinput pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

C/W

ON2

Typical Performance Curves Unless Otherwise Speciﬁed

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

= 15V

TJ= 150oC, RG = 25Ω, VGE= 15V, L = 200µH

, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

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