Intersil Corporation HGTP5N120BND, HGTG5N120BND, HGT1S5N120BNDS Datasheet

HGTG5N120BND, HGTP5N120BND,

HGT1S5N120BNDS

Data Sheet January 2000 File Number 4597.2

21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes

The HGTG5N120BN, HGTP5N120BND, and
HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on­state conduction loss of a bipolar transistor. The IGBT used
is the development type TA49308. The Diode used is the
development type TA49058 (Part number RHRD6120).

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49306.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG5N120BND TO-247 5N120BND
HGTP5N120BND TO-220AB 5N120BND
HGT1S5N120BNDS TO-263AB 5N120BND

NOTE: When ordering,use theentirepart number. Addthesuffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120BNS9A.

Features

• 21A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 175ns at T

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC STYLE TO-247

E

COLLECTOR

(FLANGE)

JEDEC TO-220AB (ALTERNATE VERSION)

= 150oC

J

C

G

Symbol

E

C

COLLECTOR

(FLANGE)

G

E

G

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

JEDEC TO-263AB

E

COLLECTOR

(FLANGE)

SABER™ is a trademark of Analogy, Inc.

| Copyright © Intersil Corporation 2000

C

G

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG5N120BND
HGTP5N120BND

HGT1S5N120BNDS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

21 A
10 A
40 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

167 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

o

C
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 25Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 1200 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 100 - µA
TC = 150oC - - 1.5 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 5A,

VGE = 15V

IC = 45µA, VCE = V

TC = 25oC - 2.45 2.7 V
TC = 150oC - 3.7 4.2 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 25Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI

ON

OFF

L = 5mH, V
IC = 5A, VCE = 0.5 BV
IC = 5A,

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC,
ICE = 5A,
VCE = 0.8 BV
VGE = 15V,
RG = 25Ω,
L = 5mH,
Test Circuit (Figure 20)

CE(PK)

CES

CES

= 1200V

CES

VGE = 15V - 53 65 nC
VGE = 20V - 60 72 nC

,

6.0 6.8 - V

30 - - A

- 10.5 - V

-2225ns

-1520ns

- 160 180 ns

- 130 160 ns

- 450 600 µJ

- 390 450 µJ

2

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON

OFF

EC

rr

IGBT and Diode at TJ = 150oC,
ICE = 5A,
VCE = 0.8 BV

CES

,

VGE = 15V,

-2025ns

-1520ns

- 182 280 ns

RG = 25Ω,
L = 5mH,
Test Circuit (Figure 20)

- 175 200 ns

- 1000 1300 µJ

- 560 800 µJ
IEC = 10A - 2.70 3.50 V
IEC = 7A, dlEC/dt = 200A/µs - 50 60 ns
IEC = 1A, dlEC/dt = 200A/µs - 30 40 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.75
Diode - - 1.75

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

25

VGE= 15V

20

15

10

5

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

35

TJ= 150oC, RG = 25Ω, VGE= 15V, L = 5mH

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

600 800400200 1000 1200

14000

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3