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HGTP3N60C3D, HGT1S3N60C3DS

Data Sheet January 2000

6A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diodes

The HGTP3N60C3D, and HGT1S3N60C3DS are MOS
gated high voltage switching devices combining the best
featuresof MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between

o

25

C and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallelwith the IGBT is the
development type TA49055.

The IGBT is ideal for many high voltage s witchingapplications
operating at moderate frequencies where low conduction losses
are essential.

Formerly Developmental Type TA49119.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP3N60C3D TO-220AB G3N60C3D
HGT1S3N60C3DS TO-263AB G3N60C3D

NOTE: Whenordering, use the entirepart number.Add the suffix9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60C3DS9A.

Symbol

C

File Number 4140.2

Features

• 6A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 130ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB

EMITTER

COLLECTOR

GATE

COLLECTOR (FLANGE)

JEDEC TO-263AB

COLLECTOR

GATE
EMITTER

(FLANGE)

= 150oC

J

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTP3N60C3D, HGT1S3N60C3DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP3N60C3D, HGT1S3N60C3DS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

6A
3A

24 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 480V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

33 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 10V (Figure 6) . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L

SC

-40 to 150
260

8 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 82Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

CES

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC

IC = 250µA, VGE = 0V 600 - - V
VCE = BV
VCE = BV

= I

C110

VGE = 15V
IC = 250µA,

VCE = V

GE

CES
CES

,

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
TC = 25oC 3.0 5.5 6.0 V

VGE = ±25V - - ±250 nA

RG = 82Ω
VGE = 15V

V
V

= 480V 18 - - A

CE(PK)

= 600V 2 - - A

CE(PK)

L = 1mH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

GEP

G(ON)

rI

fI

ON

OFF

EC

RR

IC = I

IC = IC110,

VCE = 0.5 BVCES

TJ = 150oC

ICE = I

V

CE(PK)

VGE = 15V

RG= 82Ω

L = 1mH

, VCE = 0.5 BV

C110

C110

= 0.8 BV

CES

- 8.3 - V
VGE = 15V - 10.8 13.5 nC
VGE = 20V - 13.8 17.3 nC

-5-ns

-10- ns

CES

- 325 400 ns

- 130 275 ns

-85- µJ

- 245 - µJ

IEC = 3A - 2.0 2.5 V
IEC = 3A, dIEC/dt = 200A/µs - 22 28 ns
IEC = 1A, dIEC/dt = 200A/µs - 17 22 ns

Thermal Resistance R

θJC

IGBT - - 3.75
Diode - - 3.0

o
o

C/W
C/W

NOTE:

3. Turn-OffEnergyLoss(E

) is definedastheintegraloftheinstantaneous power loss starting at the trailing edge of the input pulse andending

OFF

at the point where the collector current equals zero (ICE= 0A). The HGTP3N60C3D and HGT1S3N60C3DS were tested per JEDEC standard
No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Turn-On losses include diode losses.

2

Typical Performance Curves

HGTP3N60C3D, HGT1S3N60C3DS

20

DUTY CYCLE <0.5%, VCE = 10V

18

PULSE DURATION = 250µs

16
14
12
10

TC = 150oC

8

T

=25oC

C

6

TC = -40oC

4
2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

4

6 8 10 12

VGE, GATE TO EMITTER VOLTAGE (V)

14

20

PULSE DURATION = 250µs

18

DUTY CYCLE <0.5%
TC = 25oC

16
14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0246810

VGE = 15V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

20

PULSE DURATION = 250µs

18

DUTY CYCLE <0.5%, V

16
14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0123 45

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

= 10V

GE

TC = -40oC

TC = 150oC

TC =25oC

20

PULSE DURATION = 250µs

18

DUTY CYCLE <0.5%, VGE = 15V
16
14
12

10

T

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

012345

= -40

C

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

o

T

= 25

C

C

o

C

12V

T

= 150

C

o

10V

9.0V

8.5V

8.0V

7.5V

7.0V

C

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

7

= 15V

V

GE

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 5. MAXIMUM DC COLLECTORCURRENTvsCASE

14

VCE = 360V, RG = 82Ω, TJ = 125oC

12

10

t

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µS)

SC

0

t

10 11 12

SC

, GATE TO EMITTER VOLTAGE (V)

V

GE

I

FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

SC

14 1513

70

60

50

40

30

20

10

0

TEMPERATURE

3

, PEAK SHORT CIRCUIT CURRENT(A)

SC

I