Intersil Corporation HGTP3N60B3D, HGT1S3N60B3DS Datasheet

HGTP3N60B3D, HGT1S3N60B3DS

Data Sheet January 2000

7A, 600V, UFS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode

The HGTP3N60B3Dand HGT1S3N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the highinput impedanceof a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on­state voltage drop varies only moderately between25

o

150

C. The diode used in anti-parallel with the IGBT is the

o

C and

RHRD460. The IGBT used is TA49192.
The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49193.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP3N60B3D TO-220AB G3N60B3D
HGT1S3N60B3DS TO-263AB G3N60B3D

NOTE: Whenordering, usethe entirepartnumber.Addthe suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S3N60B3DS9A.

File Number 4414.1

Features

• 7A, 600V TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

• TB334 “Guidelines for Soldering Surface Mount

- Components to PC Boards

Packaging

JEDEC TO-220AB

E

COLLECTOR

(FLANGE)

C

= 125oC

J

G

Symbol

C

G

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

TO-263, TO-263AB

COLLECTOR
(FLANGE)

E

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTP3N60B3D, HGT1S3N60B3DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP3N60B3D,

HGT1S3N60B3DS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Average Diode Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

EC(AVG)

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

7.0 A

3.5 A

4.0
20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

33.3 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

SC
SC

300
260

5 µs

10 µs

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 82Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 1) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI

ON

OFF

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

= I

C110

CES

,

VGE = 15V

IC = 250µA, VCE = V

TC = 25oC - - 250 µA

= 150oC - - 2.0 mA

T

C

TC = 25oC - 1.8 2.1 V

= 150oC - 2.1 2.5 V

T

C

GE

4.5 5.4 6.0 V

VGE = ±20V - - ±250 nA

= 150oC, RG = 82Ω, VGE = 15V

J

18 - - A

L = 500µH, VCE= 600V
IC = I
IC = I

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC
ICE = I
VCE = 0.8 BV
VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 19)

, VCE = 0.5 BV

C110

,

C110

C110

CES

- 7.9 - V

VGE = 15V - 18 22 nC

CES

V

= 20V - 21 25 nC

GE

-18- ns

CES

-16- ns

- 105 - ns

-70- ns

-6675µJ

- 88 160 µJ

2

HGTP3N60B3D, HGT1S3N60B3DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 1) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rI

fI

ON

OFF

EC

rr

θJC

IGBT and Diode at TJ = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG = 82Ω
L = 1mH
Test Circuit (Figure 19)

-16- ns

-18- ns

- 220 295 ns

- 115 175 ns

- 130 140 µJ

- 210 325 µJ
IEC = 3A - 2.0 2.5 V
IEC = 1A, dIEC/dt = 200A/µs--22ns
I

= 3A, dIEC/dt = 200A/µs--28ns

EC

IGBT - - 3.75
Diode 3.0

NOTE:

3. Turn-OffEnergy Loss (E

) is definedas theintegral of theinstantaneous powerloss starting atthe trailing edgeof theinput pulse andending

OFF

at the pointwhere the collector current equalszero (ICE= 0A). Alldevices were tested per JEDECStandard No. 24-1 Methodfor Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

20

7

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

V

GE

= 15V

TJ= 150oC, RG = 82Ω, VGE= 15V L = 500µH

18
16
14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

200

100 500 600

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

300 400

700

FIGURE 1. DC COLLECT OR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3