Intersil Corporation HGTP2N120CN, HGTD2N120CNS Datasheet

HGTD2N120CNS, HGTP2N120CN,

HGT1S2N120CNS

Data Sheet January 2000

13A, 1200V, NPT Series N-Channel IGBT

The HGTD2N120CNS, HGTP2N120CN, and
HGT1S2N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49313.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP2N120CN TO-220AB 2N120CN
HGTD2N120CNS TO-252AA 2N120C
HGT1S2N120CNS TO-263AB 2N120CN

NOTE: When ordering,use theentirepart number. Addthe suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120CNS9A.

File Number 4680.2

Features

• 13A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

E

COLLECTOR

(FLANGE)

C

= 150oC

J

G

Symbol

C

G

E

G

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

G

E

E

JEDEC TO-252AA

COLLECTOR
(FLANGE)

JEDEC TO-263AB

COLLECTOR
(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTD2N120CNS

HGTP2N120CN,

HGT1S2N120CNS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

13 A

7A

20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 13A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

104 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AV

STG

18 mJ

-55 to 150

o

C
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC

300
260

8 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE= 3A, L = 4mH.

3. V

= 840V, TJ = 125oC, RG = 51Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

CES

TC = 25oC - - 100 µA
TC = 125oC - 100 - µA
TC = 150oC - - 1.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 2.6A,

VGE = 15V

IC = 45µA, VCE = V

TC = 25oC - 2.05 2.40 V
TC = 150oC - 2.75 3.50 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

L = 5mH, V
IC = 2.6A, VCE = 0.5 BV
IC = 2.6A,

VCE = 0.5 BV

CE(PK)

CES

= 1200V

CES

VGE = 15V - 30 36 nC
VGE = 20V - 36 43 nC

6.4 6.7 - V

13 - - A

- 10.2 - V

2

HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 5) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 25oC
ICE = 2.6A
VCE = 0.8 BV

CES

VGE = 15V
RG= 51Ω
L = 5mH
Test Circuit (Figure 18)

IGBT and Diode at TJ = 150oC,
ICE = 2.6A,
VCE = 0.8 BV

CES

,
VGE = 15V,
RG= 51Ω,
L = 5mH,
Test Circuit (Figure 18)

-2530ns

-1115ns

- 205 220 ns

- 260 320 ns

-96- µJ

- 425 590 µJ

- 355 390 µJ

-2125ns

-1115ns

- 225 240 ns

- 360 420 ns

-96- µJ

- 800 1100 µJ

- 530 580 µJ

- - 1.20

NOTES:

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.

5. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous powerloss starting atthe trailing edgeof the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

o

C/W

ON2

Typical Performance Curves Unless Otherwise Specified

14

12

10

8

6

4

, DC COLLECTOR CURRENT (A)

2

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

VGE= 15V

16

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 5mH

14

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3