Intersil Corporation HGTP2N120BND, HGT1S2N120BNDS Datasheet

HGTP2N120BND, HGT1S2N120BNDS

Data Sheet January 2000

12A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTP2N120BND and HGT1S2N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors.This device has the high inputimpedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49312. The Diode used is the development type TA49056.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49310.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP2N120BND TO-220AB 2N120BND
HGT1S2N120BNDS TO-263AB 2N120BND

NOTE: When ordering,use the entire part number.Addthe suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S2N120BNDS9A.

Symbol

C

File Number 4698.2

Features

• 12A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at T

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model
www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

E

COLLECTOR

(FLANGE)

JEDEC TO-263AB

C

G

= 150oC

J

COLLECTOR
(FLANGE)

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

G

E

| Copyright © Intersil Corporation 2000

HGTP2N120BND, HGT1S2N120BNDS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTP2N120BND

HGT1S2N120BNDS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

C25

C110

CM

GES

GEM

12 A

5.6 A
20 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . .SSOA 12A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

104 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

o

C
Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 840V, TJ = 125oC, RG = 51Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 1200 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 50 - µA
TC = 150oC - - 0.6 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 2.3A,

VGE = 15V

IC = 40µA, VCE = V

TC = 25oC - 2.45 2.7 V
TC = 150oC - 3.6 4.2 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 51Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI

ON

OFF

L = 400µH, V
IC = 2.3A, VCE = 0.5 BV
IC = 10A,

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC
ICE = 2.3A
VCE = 0.8 BV
VGE = 15V
RG= 51Ω
L = 5mH
Test Circuit (Figure 20)

CE(PK)

CES

CES

= 1200V

CES

VGE = 15V - 24 30 nC
VGE = 20V - 32 39 nC

6.0 6.8 - V

12 - - A

- 10.2 - V

-2125ns

-1115ns

- 185 240 ns

- 100 130 ns

- 370 500 µJ

- 195 270 µJ

2

HGTP2N120BND, HGT1S2N120BNDS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON

OFF

EC

rr

IGBT and Diode at TJ = 150oC
ICE = 2.3A
VCE = 0.8 BV

CES

VGE = 15V

-2530ns

-1115ns

- 195 260 ns

RG= 51Ω
L = 5mH
Test Circuit (Figure 20)

- 160 200 ns

- 725 1000 µJ

- 280 380 µJ
IEC = 2.3A - - 3.2 V
IEC = 2.3A, dlEC/dt = 200A/µs - 52 60 ns
IEC = 1A, dlEC/dt = 200A/µs - 38 44 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 1.20
Diode - - 2.5

NOTE:

3. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edgeof the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No.24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

12

V

10

8

6

4

, DC COLLECTOR CURRENT (A)

2

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

GE

= 15V

14

TJ= 150oC, RG = 51Ω, VGE= 15V, L = 1mH

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

o
o

C/W
C/W

1400

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

3

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA