Intersil Corporation HGTP1N120BN, HGTD1N120BNS Datasheet

HGTD1N120BNS, HGTP1N120BN

Data Sheet January 2000 File Number 4649.2

5.3A, 1200V, NPT Series N-Channel IGBT

The HGTD1N120BNS and HGTP1N120BN are Non-Punch
Through (NPT)IGBT designs. They are new members of the

MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49316.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD1N120BNS TO-252AA 1N120B
HGTP1N120BN TO-220AB 1N120BN

NOTE: Whenordering, usetheentirepartnumber.Addthe suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A

Symbol

C

Features

• 5.3A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical E

. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC

OFF

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB

E

COLLECTOR

(FLANGE)

C

G

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

G

JEDEC TO-252AA

COLLECTOR

(FLANGE)

E

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTD1N120BNS, HGTP1N120BN

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

ALL TYPES UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

5.3 A

2.7 A
6A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

60 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AV

STG

10 mJ

-55 to 150

o

C

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

300
260

8 µs

13 µs

o

C

o

C

NOTES:

1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.

2. ICE = 7A, L = 400µH, VGE = 15V, TJ = 25oC.

3. V

= 840V, TJ = 125oC, RG = 82Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 125oC - 20 - µA
TC = 150oC - - 1.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 1.0A

VGE = 15V

IC = 50µA, VCE = V

TC = 25oC - 2.5 2.9 V
TC = 150oC - 3.8 4.3 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 82Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

L = 2mH, V
IC = 1.0A, VCE = 0.5 BV
IC = 1.0A

VCE = 0.5 BV

CE(PK)

CES

= 1200V

CES

VGE = 15V - 14 20 nC
VGE = 20V - 15 21 nC

6.0 7.1 - V

6- - A

- 9.2 - V

2

HGTD1N120BNS, HGTP1N120BN

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 25oC
ICE = 1.0A
VCE = 0.8 BV

CES

VGE = 15V
RG = 82Ω
L = 4mH
Test Circuit (Figure 18)

IGBT and Diode at TJ = 150oC
ICE = 1.0 A
VCE = 0.8 BV

CES

VGE = 15V
RG = 82Ω
L = 4mH
Test Circuit (Figure 18)

-1520ns

-1114ns

-6776ns

- 226 300 ns

-70- J

- 172 187 J

- 90 123 J

-1317ns

-1115ns

-7588ns

- 258 370 ns

- 145 - J

- 385 440 J

- 120 175 J

- - 2.1

NOTES:

4. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss startingat the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in Figure 18.

o

C/W

ON2

is

Typical Performance Curves (Unless Otherwise Specified)

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

VGE= 15V

7

TJ= 150oC, RG = 82Ω, VGE= 15V, L = 2mH

6

5

4

3

2

1

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

3