Intersil Corporation HGTH20N50C1, HGTH20N40E1, HGTH20N40C1, HGTP15N50E1, HGTP15N50C1 Datasheet
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3-61
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
HGTP15N40C1, 40E1, 50C1, 50E1,
HGTH20N40C1, 40E1, 50C1, 50E1
15A, 20A,
400V and 500V N-Channel IGBTs
Features
• 15A and 20A, 400V and 500V
•V
CE(ON)
2.5V
•T
FI
1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protection Circuits
Description
The HGTH20N40C1, HGTH20N40E1, HGTH20N50C1, HGTH20N50E1,
HGTP15N40C1, HGTP15N40E1, HGTP15N50C1 and HGTP15N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTH20N40C1 TO-218AC G20N40C1
HGTH20N40E1 TO-218AC G20N40E1
HGTH20N50C1 TO-218AC G20N50C1
HGTH20N50E1 TO-218AC G20N50E1
HGTP15N40C1 TO-220AB G15N40C1
HGTP15N40E1 TO-220AB G15N40E1
HGTP15N50C1 TO-220AB G15N50C1
HGTP15N50E1 TO-220AB G15N50E1
NOTE: When ordering, use the entire part number.
April 1995
Packages
HGTH-TYPES JEDEC TO-218AC
HGTP-TYPES JEDEC TO-220AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
C
G
Absolute Maximum Ratings T
C
= +25oC, Unless Otherwise Specified
HGTH20N40C1
HGTH20N40E1
HGTH20N50C1
HGTH20N50E1
HGTP15N40C1
HGTP15N40E1
HGTP15N50C1
HGTP15N50E1 UNITS
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
CES
400 500 400 500 V
Collector-Gate Voltage R
GE
= 1MΩ. . . . . . . . . . . . . . . . V
CGR
400 500 400 500 V
Reverse Collector-Emitter Voltage . . . . . . . . . . . . V
CES
(rev.) -5 -5 -5 -5 V
Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GE
±20 ±20 ±20 ±20 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I
C
20 20 15 15 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
35 35 35 35 A
Power Dissipation at T
C
= +25oC . . . . . . . . . . . . . . . . . . . P
D
100 100 75 75 W
Power Dissipation Derating T
C
> +25oC . . . . . . . . . . . . . . . . . 0.8 0.8 0.6 0.6 W/oC
Operating and Storage Junction Temperature Range . . . T
J
, T
STG
-55 to +150 -55 to +150 -55 to +150 -55 to +150
o
C
File Number 2174.3
3-62
Specifications HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1
Electrical Specifications T
C
= +25oC, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS
LIMITS
UNITS
HGTH20N40C1, E1,
HGTP15N40C1, E1
HGTH20N50C1, E1,
HGTP15N50C1, E1
MIN MAX MIN MAX
Collector-Emitter Breakdown
Voltage
BV
CESIC
= 1mA, VGE = 0 400 - 500 - V
Gate Threshold Voltage V
GE(TH)VGE
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
Zero-Gate Voltage Collector
Current
I
CES
VCE = 400V, TC = +25oC - 250 - - µA
VCE = 500V, TC = +25oC ---250µA
VCE = 400V, TC = +125oC - 1000 - - µA
VCE = 500V, TC = +125oC - - - 1000 µA
Gate-Emitter Leakage Current I
GES
VGE = ±20V, VCE = 0 - 100 - 100 nA
Reverse Collector-Emitter
Leakage Current
I
CE
RGE = 0Ω, VEC = 5V - -5 - -5 mA
Collector-Emitter on Voltage V
CE(ON)IC
= 20A, VGE = 10V - 2.5 - 2.5 V
IC = 35A, VGE = 20V - 3.2 - 3.2 V
Gate-Emitter Plateau Voltage V
GEP
IC = 10A, VCE = 10V - 6 (Typ) - 6 (Typ) V
On-State Gate Charge Q
G(ON)IC
= 10A, VCE = 10V - 33 (Typ) - 33 (Typ) nC
Turn-On Delay Time t
D(ON)IIC
= 20A, V
CE(CLP)
= 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25Ω
- 50 - 50 ns
Rise Time t
RI
- 50 - 50 ns
Turn-Off Delay Time t
D(OFF)I
- 400 - 400 ns
Fall Time t
FI
40E1, 50E1 680 (Typ) 1000 680 (Typ) 1000 ns
40C1, 50C1 400 500 400 500 ns
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
W
OFF
x Frequency)
W
OFFIC
= 10A, V
CE(CLP)
= 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25Ω
40E1, 50E1 1810 (Typ) µJ
40C1, 50C1 1070 (Typ) µJ
Thermal Resistance
Junction-to-Case
R
θJC
HGTH, HGTM - 1.25 - 1.25
o
C/W
HGTP - 1.67 - 1.67
o
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
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