Intersil Corporation HGTP14N40F3VL Datasheet
April 1995
HGTP14N40F3VL
14A, 400V N-Channel,
Logic Level Voltage Clamping IGBT
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
•T
= +150oC
J
• Ignition Energy Capable
Applications
• Automotive Ignition
• Small Engine Ignition
• Fuel Ignitor
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the drain and the gate and ESD protection for the logic level gate.
Some specifications are unique to this automotive application and
are intended to assure device survival in this harsh environment.
The development type number for this device is TA49023.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP14N40F3VL TO-220AB 14N40FVL
NOTE: When ordering, use the entire part number.
Package
COLLECTOR
(FLANGE)
Symbol
GATE
JEDEC TO-220AB
EMITTER
COLLECTOR
EMITTER
COLLECTOR
GATE
Absolute Maximum Ratings T
Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Breakdown Voltage RGE = 10kΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous
VGE = 4.5V at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
VGE = 4.5V at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Open Secondary Turn-Off Current
L = 2.3mH at +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
L = 2.3mH at +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Drain to Source Avalanche Energy at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . EAS 330 mJ
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Power Dissipation Derating TC > +25oC 0.67 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
= +25oC, Unless Otherwise Specified
C
CES
CGR
C25
C90
GES
GEM
GEM
CO
CO
STG
HGTP14N40F3VL UNITS
420 V
420 V
19
14
±10 V
±12 V
±10 mA
17
12
T
L
83 W
-40 to +150
260
A
A
A
A
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
407-727-9207
| Copyright © Intersil Corporation 1999
3-50
File Number 3407.2
Specifications HGTP14N40F3VL
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Clamp Bkdn. Voltage BV
Emitter-Collector Breakdown Voltage BV
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
CES
CE(CL)IC
ECS
CES
CE(SAT)IC
GE(TH)IC
GES
LIMITS
UNITSMIN TYP MAX
IC = 10mA,
TC = +150oC 345 370 415 V
VGE = 0V
TC = +25oC 350 375 420 V
TC = -40oC 355 380 425 V
= 10A TC = +150oC 350 385 430 V
IC = 1.0mA TC = +25oC24--V
VCE = 250V TC = +25oC-- 50µA
VCE = 250V TC = +150oC - - 250 µA
= 10A
TC = +25oC - - 2.0 V
VGE = 4.5V
TC = +150oC - - 2.3 V
= 1.0mA
VCE = V
GE
TC = +25oC 1.0 1.5 2.0 V
VGE = ±10V - - ±10 µA
Gate-Emitter Breakdown Voltage BV
Current Turn-off Time-Inductive Load t
D(OFF)I
t
F(OFF)I
GESIGES
+
= ±1.0mA ±12 - - V
RL = 32Ω, IC = 10A, RG = 25Ω,
L = 550µH, VCL = 320V, VGE = 5V,
TC= +125oC
Inductive Use Test UIS L = 2.3mH,
VG = 5V,
Figure 13
Thermal Resistance R
θJC
-1216µs
TC = +150oC12--A
TC = +25oC17--A
- 1.5 -
o
C/W
3-51
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