Intersil Corporation HGTP12N60D1 Datasheet
HGTP12N60D1
April 1995
Features
• 12A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
o
C and +150oC.
12A, 600V N-Channel IGBT
Package
JEDEC TO-220AB
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
C
E
COLLECTOR
GATE
PART NUMBER PACKAGE BRAND
HGTP12N60D1 TO-220AB G12N60D1
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 30A at 0.8 BV
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
INTERSIL VmCORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
= +25oC, Unless Otherwise Specified
C
CES
CGR
C25
C90
CM
GES
STG
HGTP12N60D1 UNITS
600 V
600 V
21 A
12 A
48 A
±25 V
CES
D
L
75 W
-55 to +150
260
-
o
C
o
C
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
3-38
File Number 2830.3
Specifications HGTP12N60D1
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
LIMITS
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I
Collector-Emitter Saturation Voltage V
CE(SAT)
CES
CES
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
VCE = 0.8 BV
IC = I
CES
CES
, VGE = 15V TC = +25oC - 1.9 2.5 V
C90
TC = +25oC - - 1.0 µA
TC = +125oC - - 4.0 mA
TC = +125oC - 2.1 2.7 V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off t
D(OFF)I
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance IGBT R
GE(TH)
GES
GEP
G(ON)
D(ON)I
RI
FI
OFF
θJC
IC = 250µA, VCE = VGE, TC= +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±500 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
L = 500µH, IC = I
CES
, RG = 25Ω,
C90
VGE = 15V, TJ = +150oC,
VCE = 0.8 BV
CES
CES
VGE = 15V - 45 60 nC
VGE = 20V - 70 90 nC
- 7.2 - V
- 100 - ns
- 150 - ns
- 430 600 ns
- 430 600 ns
- 1.8 - mJ
- - 1.67
NOTE:
1. Turn-off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60D1 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-off Switching Loss. This test method produces the true total Turn-off Energy Loss.
UNITSMIN TYP MAX
o
C/W
Typical Performance Curves
20
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
V
= 10V
CE
16
12
8
TC = +150oC
T
= +25oC
4
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0246810
C
T
= -40oC
C
V
, GATE-EMITTER VOLTAGE (V)
GE
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
20
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
= +25oC
T
C
15
VGE = 15V
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
012345
V
, COLLECTOR-EMITTER VOLTAGE (V)
GE
VGE = 5.7V
VGE = 10V
VGE = 7.5V
VGE = 7.0V
VGE = 6.5V
VGE = 6.0V
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