Intersil Corporation HGTP12N60B3D, HGTG12N60B3D, HGT1S12N60B3DS Datasheet

HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS

Data Sheet January 2000

27A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC. The IGBT used is the
development type TA49171. The diode used in anti-parallel
with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49173.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60B3D TO-220AB 12N60B3D
HGTG12N60B3D TO-247 12N60B3D
HGT1S12N60B3DS TO-263AB 12N60B3D

NOTE: Whenordering, use theentire part number.Add thesuffix9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60B3DS9A.

Symbol

File Number 4411.2

Features

• 27A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

E

C

COLLECTOR
(FLANGE)

JEDEC TO-263AB

COLLECTOR

G

E

(FLANGE)

= 150oC

J

G

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

JEDEC STYLE TO-247

E

C

G

COLLECTOR
(BOTTOM SIDE METAL)

| Copyright © Intersil Corporation 2000

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

CES

C25

C110

CM

GES

GEM

600 V

27 A
12 A

110 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

104 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

ARV
STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

SC
SC

100 mJ

-55 to 150

300
260

5 µs

10 µs

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG= 25Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= I

,

C110

VGE = 15V
IC = 250µA, VCE = V

TC = 25oC - 1.6 2.1 V
TC = 150oC - 1.7 2.5 V

GE

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 25Ω,VGE = 15V

L = 100µH, VCE= 600V
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

g(ON)

rI

fI

ON

OFF

rI

fI

ON

OFF

IC = I

IC = I

VCE = 0.5 BV

, VCE = 0.5 BV

C110

,

C110

CES

VGE = 15V - 51 60 nC

CES

VGE = 20V - 68 78 nC

IGBT and Diode at TJ = 25oC

ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V

RG= 25Ω

L = 1mH

Test Circuit (Figure 19)

IGBT and Diode at TJ = 150oC

ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V

RG= 25Ω

L = 1mH

Test Circuit (Figure 19)

4.5 4.9 6.0 V

96 - - A

- 7.3 - V

-26- ns

-23- ns

- 150 - ns

-62- ns

- 304 350 µJ

- 250 350 µJ

-22- ns

-23- ns

- 280 295 ns

- 112 175 ns

- 500 525 µJ

- 660 800 µJ

2

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Forward Voltage V
Diode Reverse Recovery Time t

EC

rr

IEC = 12A - 1.7 2.1 V

IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns

IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns
Thermal Resistance Junction To Case R

θJC

IGBT - - 1.2

Diode - - 1.9

NOTE:

3. Turn-OffEnergyLoss (E

) isdefinedas the integralofthe instantaneous powerlossstarting at thetrailingedge of the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

30

25

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

GE

= 15V

100

TJ= 150oC, RG = 25Ω, VGE= 15V, L = 100µH

90
80
70
60
50
40
30
20
10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

0

I

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

o
o

C/W
C/W

700

FIGURE 1. DC COLLECTORCURRENT vs CASE

TEMPERATURE

300

TJ= 150oC, RG = 25Ω, L = 1mH, VCE= 480V

100

10

f

= 0.05 / (t

MAX1

f

= (PD- PC) / (EON + E

MAX2

PC = CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

(DUTY FACTOR = 50%)
R

MAX

f

= 1.2oC/W, SEE NOTES

θJC

1

2

3

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

+ t

d(ON)I

OFF

)

)

T

C

o

75

o

75

o

110
110oC

V
15V

C

10V

C

15V

C

10V

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

GE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

16

14 90

12

10

8

6

4

, SHORT CIRCUIT WITHSTAND TIME (µs)

2

SC

3010 20

t

VCE = 360V, RG= 25Ω, TJ= 125oC

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

100

I

SC

80

70

60

50

t

SC

40

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

30

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

3