Intersil Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Datasheet

HGTP12N60A4, HGTG12N60A4,

HGT1S12N60A4S

Data Sheet May 1999 File Number

600V, SMPS Series N-Channel IGBT

The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49335.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60A4 TO-220AB 12N60A4
HGTG12N60A4 TO-247 12N60A4
HGT1S12N60A4S TO-263AB 12N60A4

NOTE: When ordering, use the entire part number. Add the suffix
9A to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4S9A

Symbol

C

G

Features

• >100kHz Operation at 390V, 12A

• 200kHz Operation at 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

• Low Conduction Loss

Temperature Compensating

•

SABER Model

http://www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

E

C

COLLECTOR

(FLANGE)

JEDEC TO-263AB

G

E

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

G

4656.2

= 125oC

J

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

E

C

G

COLLECTOR

(FLANGE)

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4SSP

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG12N60A4, HGTP12N60A4,

HGT1S12N60A4S UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . V

C25

CM

GES

GEM

54 A
23 A
96 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . .SSOA 60A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . P

D

167 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

Operating and Storage Junction Temperature Range . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

300

260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 10 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V

= 12A,

VGE = 15V

TJ = 25oC - 2.0 2.7 V

TJ = 125oC - 1.6 2.0 V
IC = 250µA, VCE = 600V - 5.6 - V
VGE = ±20V - - ±250 nA

60 - - A

L = 100µH, VCE= 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

IC = 12A, VCE = 300V - 8 - V
IC = 12A,

VCE = 300V

IGBT and Diode at TJ = 25oC
ICE = 12A
VCE = 390V
VGE =15V
RG= 10Ω
L = 500µH
Test Circuit - (Figure 20)

VGE = 15V - 78 96 nC
VGE = 20V - 97 120 nC

-17- ns

-8-ns

-96- ns

-18- ns

-55- µJ

- 160 - µJ

-50- µJ

2

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4SPD

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
ICE = 12A
VCE = 390V
VGE = 15V
RG= 10Ω
L = 500µH
Test Circuit - (Figure 20)

-17- ns

-16- ns

- 110 170 ns

-7095ns

-55- µJ

- 250 350 µJ

- 175 285 µJ

- - 0.75

NOTES:

2. Turn-OffEnergy Loss (E

) is defined asthe integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.

Typical Performance Curves

60

50

Unless Otherwise Specified

VGE= 15V

70

TJ= 150oC, RG = 10Ω, VGE= 15V, L = 200µH

60

o

C/W

ON2

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

V

T

300

100

f

= 0.05 / (t

MAX1

f

= (PD- PC) / (E

MAX2

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)
= 0.75oC/W, SEE NOTES

R

ØJC

, OPERATING FREQUENCY (kHz)

MAX

TJ= 125oC, RG = 10Ω, L = 500µH, VCE= 390V

f

10

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

3

+ t

ON2

d(ON)I

+ E

OFF

)

)

C

o

15V

75

C

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

GE

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20

VCE = 390V, RG = 10Ω, TJ= 125oC

18
16
14
12
10

8
6
4
2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

3010 20

9101112 15

, GATE TO EMITTER VOLTAGE (V)

V

GE

I

SC

t

SC

13 14

300
275
250
225
200
175
150
125
100
75

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

50

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

3