Intersil Corporation HGTP11N120CN, HGTG11N120CN, HGT1S11N120CNS Datasheet

HGTG11N120CN, HGTP11N120CN,

HGT1S11N120CNS

Data Sheet January 2000

43A, 1200V, NPT Series N-Channel IGBT

The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49291.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG11N120CN TO-247 G11N120CN HGTP11N120CN TO-220AB 11N120CN HGT1S11N120CNS TO-263AB 11N120CN

File Number 4577.2

Features

• 43A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE

METAL)

= 150oC

NOTE: When ordering,use theentirepart number. Addthesufﬁx 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S11N120CNS9A.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

SABER™ is a trademark of Analogy, Inc.

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTG11N120CN HGTP11N120CN

HGT1S11N120CNS UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

43 A 22 A 80 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

298 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

80 mJ

-55 to 150

C Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

pkg

SC SC

300 260

8 µs

15 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE= 20A, L = 400µH, TJ = 25oC.

3. V

= 840V, TJ = 125oC, RG = 10Ω.

CE(PK)

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CES ECS

CES

IC = 250µA, VGE = 0V 1200 - - V IC = 10mA, VGE= 0V 15 - - V VCE = BV

CES

TC = 25oC - - 250 µA TC = 125oC - 250 - µA TC = 150oC--3mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= 11A,

VGE = 15V

IC = 90µA, VCE = V

TC = 25oC - 2.1 2.4 V TC = 150oC - 2.8 3.5 V

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

GEP

G(ON)

L = 400µH, V IC = 11A, VCE = 0.5 BV IC = 11A,

VCE = 0.5 BV

CE(PK)

CES

= 1200V

CES

VGE = 15V - 100 120 nC VGE = 20V - 130 150 nC

6.0 6.8 - V

55 - - A

- 10.4 - V

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 4) E Turn-On Energy (Note 4) E Turn-Off Energy (Note 5) E Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 4) E Turn-On Energy (Note 4) E Turn-Off Energy (Note 5) E Thermal Resistance Junction To Case R

fI ON1 ON2 OFF

θJC

IGBT and Diode at TJ = 25oC ICE = 11A VCE = 0.8 BV

CES

VGE = 15V RG= 10Ω L = 2mH Test Circuit (Figure 18)

IGBT and Diode at TJ = 150oC ICE = 11A VCE = 0.8 BV

CES

VGE = 15V RG= 10Ω L = 2mH Test Circuit (Figure 18)

-2326ns

-1216ns

- 180 240 ns

- 190 230 ns

- 0.4 0.5 mJ

- 0.95 1.3 mJ

- 1.3 1.6 mJ

-2124ns

-1216ns

- 210 280 ns

- 340 400 ns

- 0.45 0.6 mJ

- 1.9 2.5 mJ

- 2.1 2.5 mJ

- - 0.42

NOTES:

4. Values fortwo Turn-On loss conditionsare shown for theconvenience of the circuitdesigner.E

is the turn-on lossof the IGBT only.E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJas the IGBT. The diode type is specified in Figure 18.

5. Turn-OffEnergy Loss (E

) is defined as the integral ofthe instantaneous powerloss starting atthe trailing edgeof the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

C/W

ON2

Typical Performance Curves Unless Otherwise Speciﬁed

45 40 35

30 25 20 15 10

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

= 15V

TJ= 150oC, RG = 10Ω, VGE= 15V, L = 400µH

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

1400

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