Intersil Corporation HGTP10N50F1D, HGTP10N40F1D Datasheet
April 1995
HGTP10N40F1D,
HGTP10N50F1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
• 10A, 400V and 500V
• Latch Free Operation
• Typical Fall Time < 1.4µs
• High Input Impedance
• Low Conduction Loss
• Anti-Parallel Diode
< 60ns
•t
RR
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25
and +150
ultrafast (t
o
C. The diode used in parallel with the IGBT is an
< 60ns) with soft recovery characteristic.
RR
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP10N40F1D TO-220AB 10N40F1D
HGTP10N50F1D TO-220AB 10N50F1D
NOTE: When ordering, use the entire part number
o
Package
COLLECTOR
(FLANGE)
Terminal Diagram
C
N-CHANNEL ENHANCEMENT MODE
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
C
G
E
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTE:
1. TJ = +150oC, Min. RGE = 25Ω without latch.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
3-25
HGTP10N40F1D HGTP10N50F1D UNITS
CES
CGR
C25
C90
CM
GES
F25
F90
D
STG
L
400 500 V
400 500 V
12 12 A
10 10 A
12 12 A
±20 ±20 V
16 16 A
10 10 A
75 75 W
-55 to +150 -55 to +150
260 260
File Number 2751.2
o
C
o
C
Specifications HGTP10N40F1D, HGTP10N50F1D
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown
Voltage
Gate Threshold Voltage V
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current I
Collector-Emitter On-Voltage V
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
Turn-Off Delay Time t
Fall Time t
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = W
OFF
x
Frequency)
Thermal Resistance Junction-to-
Case (IGBT)
Thermal Resistance of Diode R
Diode Forward Voltage V
Diode Reverse Recovery Time t
BV
CESIC
GE(TH)VGE
I
CES
GES
CE(ON)TJ
GEP
G(ON)IC
D(ON)
RI
D(OFF)
FI
W
OFF
D(OFF)I
FI
W
OFF
R
θJC
θJC
EC
RR
LIMITS
HGTP10N40F1D HGTP10N50F1D
MIN MAX MIN MAX
UNITS
= 1.25mA, VGE = 0V 400 - 500 - V
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
TJ = +150oC, VCE = 400V - 1.25 - - mA
= +150oC, VCE = 500V - - - 1.25 mA
T
J
VGE = ±20V, VCE = 0V - 100 - 100 nA
= +150oC, IC = 5A, VGE = 10V - 2.5 - 2.5 V
= +150oC, IC = 5A, VGE = 15V - 2.2 - 2.2 V
T
J
= +25oC, IC = 5A, VGE = 10V - 2.5 - 2.5 V
T
J
= +25oC, IC = 5A, VGE = 15V - 2.2 - 2.2 V
T
J
IC = 5A, VCE = 10V 5.3 (Typ) V
= 5A, VCE = 10V 13.4 (Typ) nC
Resistive Load, IC = 5A,
VCE = 400V, RL = 80Ω,
TJ = +150oC, VGE = 10V,
RG = 25Ω
45 (Typ) ns
35 (Typ) ns
130 (Typ) ns
1400 (Typ) ns
0.64 (Typ) mJ
Inductive Load (See Figure 13),
IC = 5A, V
CE(CLP)
= 400V, RL =
80Ω, L = 50µH, TJ = +150oC, VGE =
10V, RG = 25Ω
- 375 - 375 ns
- 1200 - 1200 ns
- 1.2 - 1.2 mJ
- 1.67 - 1.67
- 2.0 - 2.0
o
C/W
o
C/W
IEC = 10A - 1.7 - 1.7 V
IEC = 10A, dIEC/dt = 100A/µs - 60 - 60 ns
Typical Performance Curves
12
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
10
DUTY CYCLE < 2%
8
6
4
TC = -55oC
T
= +25oC
C
2
, COLLECTOR-EMITTER CURRENT (A)
T
= +150oC
CE
I
C
0
02 4 6 810
, GATE-TO-EMITTER VOLTAGE (V)
V
GE
TC = -55oC
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
3-26
10
VGE = 10V
8
6
4
2
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
= 15V
GE
V
0246810
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
= +25oC
T
C
VGE = 6.0V
VGE = 5.5V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
Loading...