Intersil Corporation HGTP10N50E1D, HGTP10N50C1D, HGTP10N40E1D, HGTP10N40C1D Datasheet
April 1995
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
• 10A, 400V and 500V
CE(ON)
: 1µs, 0.5µs
FALL
: 2.5V Max.
•V
•T
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY
Package
JEDEC TO-220AB
COLLECTOR
(FLANGE)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
COLLECTOR
GATE
C
E
PART NUMBER PACKAGE BRAND
HGTP10N40C1D TO-220AB 10N40C1D
HGTP10N40E1D TO-220AB 10N40E1D
HGTP10N50C1D TO-220AB 10N50C1D
HGTP10N50E1D TO-220AB 10N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . I
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, T
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
3-20
HGTP10N40C1D
HGTP10N40E1D
CES
CGR
GE
C25
C90
D
STG
HGTP10N50C1D
HGTP10N50E1D UNITS
400 500 V
400 500 V
±20 ±20 V
17.5 17.5 A
10 10
75 75 W
-55 to +150 -55 to +150
File Number 2405.5
o
C
Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Collector Current I
Gate-Emitter Leakage Current I
Collector-Emitter On Voltage V
Gate-Emitter Plateau Voltage V
CESIC
GE(TH)VGE
CES
VCE = 400V, TC = +25oC - 250 - - µA
VCE = 500V, TC = +25oC---250µA
VCE = 400V, TC = +125oC - 1000 - - µA
VCE = 500V, TC = +125oC - - - 1000 µA
GES
CE(ON)IC
VGE = ±20V, VCE = 0 - 100 - 100 nA
IC = 17.5A, VGE = 20V - 3.2 - 3.2 V
GEP
IC = 5A, VCE = 10V - 6 (Typ) - 6 (Typ) V
LIMITS
HGTP10N40C1D,
HGTP10N40E1D
MIN MAX MIN MAX
HGTP10N50C1D,
HGTP10N50E1D
UNITS
= 1mA, VGE = 0 400 - 500 - V
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
= 10A, VGE = 10V - 2.5 - 2.5 V
On-State Gate Charge Q
Turn-On Delay Time t
G(ON)IC
D(ON)IIC
= 5A, VCE = 10V - 19 (Typ) - 19 (Typ) nC
= 10A, V
CE(CLP)
= 300V,
- 50 - 50 ns
L = 50µH, TJ = +100oC,
Rise Time t
Turn-Off Delay Time t
D(OFF)I
Fall Time t
VGE = 10V, RG = 50Ω
RI
FI
- 50 - 50 ns
- 400 - 400 ns
40E1D, 50E1D 680 (Typ) 1000 680 (Typ) 1000 ns
40C1D, 50C1D 400 (Typ) 500 400 (Typ) 500 ns
Turn-Off Energy Loss per Cycle (Off
Switching Dissipation =
W
x Frequency)
OFF
W
OFFIC
= 10A, V
CE(CLP)
= 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω
40E1D, 50E1D 1810 (Typ) µJ
40C1D, 50C1D 1070 (Typ) µJ
Thermal Resistance Junction-to-Case R
Diode Forward Voltage V
Diode Reverse Recovery Time t
RR
θJC
IEC = 10A -2-2V
EC
IEC = 10A, di/dt = 100A/µs - 100 - 100 ns
- 1.67 - 1.67
o
C/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
3-21
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