Intersil Corporation HGTP10N40C1, HGTH12N50E1, HGTH12N50C1, HGTH12N40E1, HGTP10N50E1 Datasheet

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3-15

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207

HGTP10N40C1, 40E1, 50C1, 50E1,

HGTH12N40C1, 40E1, 50C1, 50E1

10A, 12A,

400V and 500V N-Channel IGBTs

Features

• 10A and 12A, 400V and 500V

•V

CE(ON)

: 2.5V Max.

•T

: 1µs, 0.5µs

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

• No Anti-Parallel Diode

Applications

• Power Supplies

• Motor Drives

• Protection Circuits

Description

The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTH12N40C1 TO-218AC G12N40C1 HGTH12N40E1 TO-218AC G12N40E1 HGTH12N50C1 TO-218AC G12N50C1 HGTH12N50E1 TO-218AC G12N50E1 HGTP10N40C1 TO-220AB G10N40C1 HGTP10N40E1 TO-220AB G10N40E1 HGTP10N50C1 TO-220AB G10N50C1 HGTP10N50E1 TO-220AB G10N50E1

NOTE: When ordering, use the entire part number.

April 1995

Packages

HGTH-TYPES JEDEC TO-218AC

HGTP-TYPES JEDEC TO-220AB

GATE

COLLECTOR

EMITTER

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

GATE

COLLECTOR

EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

Absolute Maximum Ratings T

= +25oC, Unless Otherwise Speciﬁed

HGTH12N40C1 HGTH12N40E1

HGTH12N50C1 HGTH12N50E1

HGTP10N40C1 HGTP10N40E1

HGTP10N50C1 HGTP10N50E1 UNITS

Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V

CES

400 500 400 500 V

Collector-Gate Voltage R

= 1MΩ. . . . . . . . . . . . . . . . V

CGR

400 500 400 500 V

Reverse Collector-Emitter Voltage . . . . . . . . . . . . V

ECS

(rev.) 15 15 -5 -5 V

Gate-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V

±20 ±20 ±20 ±20 V

Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . I

12 12 10 10 A

Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . I

17.5 17.5 17.5 17.5 A

Power Dissipation at T

= +25oC . . . . . . . . . . . . . . . . . . . P

75 75 60 60 W

Power Dissipation Derating Above T

> +25oC . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC

Operating and Storage Junction Temperature Range . . . T

, T

STG

-55 to +150 -55 to +150 -55 to +150 -55 to +150

File Number 1697.3

3-16

Speciﬁcations HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

Electrical Speciﬁcations T

= +25oC, Unless Otherwise Speciﬁed

PARAMETERS SYMBOL TEST CONDITIONS

LIMITS

UNITS

HGTH12N40C1, E1,

HGTP10N40C1, E1

HGTH12N50C1, E1,

HGTP10N50C1, E1

MIN MAX MIN MAX

Collector-Emitter Breakdown Voltage

CESIC

= 1mA, VGE = 0 400 - 500 - V

Gate Threshold Voltage V

GE(TH)VGE

= VCE, IC = 1mA 2.0 4.5

3 (Typ)

2.0 4.5 3 (Typ)

Zero Gate Voltage Collector Current

CES

VCE = 400V, TC = +25oC - 250 - - µA VCE = 500V, TC = +25oC ---250µA VCE = 400V, TC = +125oC - 1000 - - µA VCE = 500V, TC = +125oC - - - 1000 µA

Gate-Emitter Leakage Current I

GES

VGE = ±20V, VCE = 0 - 100 - 100 nA

Collector-Emitter on Voltage V

CE(ON)IC

= 10A, VGE = 10V - 2.5 - 2.5 V

IC = 17.5A, VGE = 20V - 3.2 - 3.2 V

Gate-Emitter Plateau Voltage V

GEP

IC = 5A, VCE = 10V - 6 (Typ) - 6 (Typ) V

On-State Gate Charge Q

G(ON)IC

= 5A, VCE = 10V - 19 (Typ) - 19 (Typ) nC

Turn-On Delay Time t

D(ON)IIC

= 10A, V

CE(CLP)

= 300V, L = 50µH, TJ = +100oC, VGE = 10V, RG = 50Ω

- 50 - 50 ns

Rise Time t

- 50 - 50 ns

Turn-Off Delay Time t

D(OFF)I

- 400 - 400 ns

Fall Time t

40E1, 50E1 680 (Typ) 1000 680 (Typ) 1000 ns 40C1, 50C1 400 500 400 500 ns

Turn-Off Energy Loss per Cycle (Off Switching Dissipation = W

OFF

x Frequency)

OFFIC

= 10A, V

CE(CLP)

= 300V, L = 50µH, TJ = +100oC, VGE = 10V, RG = 50Ω

40E1, 50E1 680 (Typ) µJ 40C1, 50C1 400 (Typ) µJ

Thermal Resistance Junction-to-Case

θJC

HGTH, HGTM - 1.67 - 1.67

C/W

HGTP - 2.083 - 2.083

C/W

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

3-17

HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1

Typical Performance Curves

FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,

VGE = 0V ARE THE MIN. ALLOWABLE VALUES

FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERAT-

ING CURVE

FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLT-

AGE vs JUNCTION TEMPERATURE

FIGURE 4. NORMALIZED THERMAL RESPONSE CHARAC-

TERISTICS

FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS FIGURE 6. TYPICAL SATURATION CHARACTERISTICS

20.0

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0.0

-75 -50 -25 0 +25 +50 +75 +100 +125 +150 +175

, COLLECTOR CURRENT (A)

TD, JUNCTION TEMPERATURE (oC)

VGE = 10V, R

GEN

= RGE = 100Ω

100

0 +25 +50 +75 +100 +125 +150

RATED POWER DISSIPATION (%)

TC, CASE TEMPERATURE (oC)

1.3

1.2

1.1

1.0

0.9

0.8

0.7

-50 0 +50 +100 +150

NORMALIZED GATE THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE (oC)

VGE = VCE, IC = 1mA

r(t), EFFECTIVE TRANSIENT THERMAL

IMPEDANCE (NORMALIZED)

1.0

0.1

0.01

0.01 0.1 1.0 10 100 1000 t, TIME (ms)

θJC

(t) = r(t)R

θJC

D CURVES APPLY FOR POWER PULSE, TRAIN SHOWN READ TIME AT t1, T

J(PEAK)

- TC = P

(PEAK)ZθJC

(t)

D = 0.05

SINGLE PULSE

D = 0.5

D = 0.2

17.5

15.0

12.5

10.0

7.5

5.0

2.5

0 2.5 5.0 7.5 10.0

, ON-STATE COLLECTOR CURRENT (A)

VGE, GATE-TO-EMITTER VOLTAGE (V)

PULSE TEST, VCE = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX.

-40oC

+25oC

+125oC

17.5

15.0

12.5

10.0

7.5

5.0

2.5

012345

, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VGE = 20V VGE = 10V

VGE = 8V

VGE = 7V

VGE = 6V

VGE = 5V

VGE = 4V

= +25oC

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