Intersil Corporation HGTH20N50E1D, HGTH20N50C1D, HGTH20N40E1D, HGTH20N40C1D Datasheet
April 1995
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
• 20A, 400V and 500V
•V
•T
CE(ON)
FALL
2.5V Max.
1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete antiparallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
depletion region. These types can be operated directly from
low power integrated circuits.
Package
JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTH20N40C1D TO-218AC G20N40C1D
HGTH20N40E1D TO-218AC G20N40E1D
HGTH20N50C1D TO-218AC G20N50C1D
HGTH20N50E1D TO-218AC G20N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 0.8 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, T
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . I
3-76
HGTH20N40C1D
HGTH20N40E1D
CES
CGR
GE
C
CM
F25
F90
D
STG
HGTH20N50C1D
HGTH20N50E1D UNITS
400 500 V
400 500 V
±20 ±20 V
20 20 A
35 35 A
35 35 A
20 20 A
100 100 W
-55 to +150 -55 to +150
File Number 2271.4
o
C
Specifications HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Collector Current I
Gate-Emitter Leakage Current I
Collector-Emitter On Voltage V
Gate-Emitter Plateau Voltage V
CESIC
GE(TH)VGE
CES
VCE = 400V, TC = +25oC - 250 - - µA
VCE = 500V, TC = +25oC---250µA
VCE = 400V, TC = +125oC - 1000 - - µA
VCE = 500V, TC = +125oC - - - 1000 µA
GES
CE(ON)IC
VGE = ±20V, VCE = 0 - 100 - 100 nA
IC = 35A, VGE = 20V - 3.2 - 3.2 V
GEP
IC = 10A, VCE = 10V - 6 (Typ) - 6 (Typ) V
LIMITS
HGTH20N40C1D,
HGTH20N40E1D
MIN MAX MIN MAX
HGTH20N50C1D,
HGTH20N50E1D
UNITS
= 1mA, VGE = 0 400 - 500 - V
= VCE, IC = 1mA 2.0 4.5 2.0 4.5 V
= 20A, VGE = 10V - 2.5 - 2.5 V
On-State Gate Charge Q
Turn-On Delay Time t
G(ON)IC
D(ON)IIC
= 10A, VCE = 10V - 33 (Typ) - 33 (Typ) nC
= 20A, V
CE(CLP)
= 300V,
- 50 - 50 ns
L = 25µH, TJ = +100oC,
Rise Time t
Turn-Off Delay Time t
Fall Time t
RI
D(OFF)I
FI
40E1D, 50E1D 680
40C1D, 50C1D 400
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation = W
OFF
x
W
OFFIC
Frequency)
VGE = 10V, RG = 25Ω
= 20A, V
CE(CLP)
= 300V,
L = 25µH, TJ = +100oC,
VGE = 10V, RG = 25Ω
- 50 - 50 ns
- 400 - 400 ns
(Typ)
(Typ)
1000 680
(Typ)
500 400
(Typ)
1000 ns
500 ns
40E1D, 50E1D 1810 (Typ) µJ
40C1D, 50C1D 1070 (Typ) µJ
Thermal Resistance Junction-to-Case R
Diode Forward Voltage V
Diode Reverse Recovery Time t
RR
θJC
EC
IEC = 20A -2-2V
IEC = 20A, dIEC/dt = 100A/µs - 100 - 100 ns
- 1.25 - 1.25
o
C/W
3-77
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