Intersil Corporation HGTG40N60C3 Datasheet

HGTG40N60C3

Data Sheet January 2000

75A, 600V, UFS Series N-Channel IGBT

The HGTG40N60C3 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49273.

Ordering Information

PART NUMBER PACKAGE PKG. NO.

HGTG40N60C3 TO-247 G40N60C3

NOTE: When ordering, use the entire part number.

File Number 4472.2

Features

• 75A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

= 150oC

J

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG40N60C3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG40N60C3 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

75 A
40 A

300 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 40A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

291 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-55 to 150
260

5 µs

10 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE = 0V 15 25 - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 4.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG =

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 4) E

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

= I

,

C110

VGE = 15V

IC = 250µA, VCE = V

TC = 25oC - 1.3 1.8 V
TC = 150oC - 1.4 2.0 V

GE

3.1 4.5 6.0 V

VGE = ±20V - - ±250 nA

VCE = 480V 200 - - A
3Ω, VGE = 15V,
L = 400µH

IC = I
IC = I

, VCE = 0.5 BV

C110

,

C110

VCE = 0.5 BV

IGBT and Diode at TJ = 25oC
ICE = I

C110

VCE = 0.8 BV
VGE = 15V

VCE = 600V 40 - - A

CES

- 7.2 - V

VGE = 15V - 275 302 nC

CES

VGE = 20V - 360 395 nC

-47- ns

CES

-30- ns

- 185 - ns

RG= 3Ω
L = 1mH
Test Circuit (Figure 17)

-60- ns

- 850 - mJ

- 1.0 1.2 mJ

- 1.0 1.8 mJ

2

HGTG40N60C3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 17)

-41- ns

-30- ns

- 360 450 ns

- 100 210 ns

- 860 - µJ

- 2.0 2.4 mJ

- 2.5 4 mJ

- - 0.43

NOTES:

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.

4. Turn-OffEnergy Loss (E

) is defined as theintegral of the instantaneous power loss starting at thetrailing edge of the inputpulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

80

70

60

PACKAGE

LIMIT

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

VGE= 15V

225

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 100µH

200
175
150
125
100

75
50
25

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

o

C/W

ON2

700

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

TJ= 150oC, RG = 3Ω, L = 1mH, VCE= 480V

100

TCV

GE

o

15V

C

75

o

75

C

10V

110oC

15V

110oC

10

f

MAX1

f

MAX2

= CONDUCTION DISSIPATION

P

C

, OPERATING FREQUENCY (kHz)

R

MAX

f

ØJC

1

2

10V

= 0.05 / (t
= (PD- PC) / (E

(DUTY FACTOR = 50%)
= 0.43oC/W, SEE NOTES

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

d(OFF)I

5

+ t

ON2

d(ON)I

+ E

OFF

)

)

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

3

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20

16

12

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

8010 40

t

VCE = 360V, RG = 3Ω, TJ= 125oC

8

4

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

t

SC

750

I

SC

625

500

375

, PEAK SHORT CIRCUIT CURRENT (A)

SC

250

I

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME