Intersil Corporation HGTG40N60B3 Datasheet

HGTG40N60B3

Data Sheet January 2000

70A, 600V, UFS Series N-Channel IGBT

The HGTG40N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49052.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG40N60B3 TO-247 G40N60B3

NOTE: When ordering, use the entire part number.

File Number 3943.3

Features

• 70A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

COLLECTOR

(FLANGE)

= 150oC

J

C

G

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG40N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG40N60B3 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

70 A
40 A

330 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

290 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.33 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-55 to 150
260

2 µs

10 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

S

Electrical Specifications T

= 360V, TJ = 125oC, RG= 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 15 25 - V
VCE = BV
VCE = BV

= I

C110

CES
CES

,

VGE = 15V

IC = 250µA, VCE = V

TC = 25oC - - 100 µA
TC = 150oC - - 6.0 mA
TC = 25oC - 1.4 2.0 V
TC = 150oC - 1.5 2.3 V

GE

3.0 4.8 6.0 V

VGE = ±20V - - ±100 nA

VCE= 480V 200 - - A
RG = 3Ω
VGE = 15V

VCE= 600V 100 - - A
L = 100µH

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 1) E

GEP

G(ON)

rI

fI

ON

OFF

IC = I
IC = I

VCE = 0.5 BV

, VCE = 0.5 BV

C110

,

C110

CES

VGE = 15V - 250 330 nC

CES

VGE = 20V - 335 435 nC
IGBT and Diode Both at TJ = 25oC

ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 3Ω
L = 100µH
Test Circuit (Figure 17)

- 7.5 - V

-47- ns

-35- ns

- 170 200 ns

- 50 100 ns

- 1050 1200 µJ

- 800 1400 µJ

2

HGTG40N60B3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 1) E
Thermal Resistance Junction To Case R

rI

fI

ON

OFF

θJC

IGBT and Diode Both at TJ = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 3Ω
L = 100µH
Test Circuit (Figure 17)

-47- ns

-35- ns

- 285 375 ns

- 100 175 ns

- 1850 - µJ

- 2000 - µJ

- - 0.43

NOTE:

3. Turn-OffEnergyLoss(E

) isdefinedasthe integral of the instantaneous power lossstartingatthe trailing edge of the input pulseandending

OFF

at the point where thecollectorcurrentequalszero(ICE= 0A). All devices weretestedperJEDECStandardNo.24-1Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.

Typical Performance Curves (Unless Otherwise Specified)

100

VGE = 15V

80

250

TJ= 150oC, RG = 3Ω, VGE= 15V

200

o

C/W

60

40

20

, DC COLLECTOR CURRENT (A)

CE

I

PACKAGE LIMITED

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

TJ= 150oC, RG = 3Ω, L = 100µH, VCE= 480V

T

100

10

f

MAX1

f

MAX2

P

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)
f

C

(DUTY FACTOR = 50%)

MAX

R

ØJC

1

10

= 0.05 / (t
= (PD- PC) / (EON + E

= 0.43oC/W, SEE NOTES

I

, COLLECTOR TO EMITTER CURRENT (A)

CE

+ t

d(OFF)I

20 40 60 100

d(ON)I

OFF

)
)

75

75

110

110oC

C

o
o

o

150

100

50

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

100 500 600

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

18

V

GE

15V

C
C

10V
15V

C

10V

80

16

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

t

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

VCE = 360V, RG= 3Ω, TJ= 125oC

I

SC

t

SC

900

800

700

600

500

400

300

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

200

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME