Intersil Corporation HGTG40N60A4 Datasheet

HGTG40N60A4

Data Sheet April 2000

600V, SMPS Series N-Channel IGBT

The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25

C and 150oC.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49347.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG40N60A4 TO-247 40N60A4

NOTE: When ordering, use the entire part number.

Symbol

File Number 4782.2

Features

• 100kHz Operation At 390V, 40A

• 200kHz Operation At 390V, 20A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at T

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

COLLECTOR (FLANGE)

= 125

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

HGTG40N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTG40N60A4 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

75 A 63 A

300 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 200A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

625 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

STG

-55 to 150 260

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Speciﬁcations TJ = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CES ECS

CES

IC = 250µA, VGE = 0V 600 - - V IC = 10mA, VGE = 0V 20 - VCE = BV

CES

TJ = 25oC - - 250 µA TJ = 125oC - - 3.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 2.2Ω, VGE = 15V

= 40A,

VGE = 15V

IC = 250µA, VCE = V

TJ = 25oC - 1.7 2.7 V TJ = 125oC - 1.5 2.0 V

4.5 5.6 7 V

VGE = ±20V - - ±250 nA

200 - - A

L = 100µH, VCE= 600V Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E

GEP

g(ON)

fI ON1 ON2 OFF

IC = 40A, VCE = 0.5 BV IC = 40A,

VCE = 0.5 BV

CES

VGE = 15V - 350 405 nC VGE = 20V - 450 520 nC

IGBT and Diode at TJ = 25oC ICE = 40A VCE = 0.65 BV

CES

VGE = 15V RG = 2.2Ω L = 200µH Test Circuit (Figure 20)

- 8.5 - V

-25- ns

-18- ns

- 145 - ns

-35- ns

- 400 - µJ

- 850 - µJ

- 370 - µJ

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HGTG40N60A4

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 3) E Turn-On Energy (Note 3) E Turn-Off Energy (Note 2) E Thermal Resistance Junction To Case R

fI ON1 ON2 OFF

θJC

IGBT and Diode at TJ = 125oC ICE = 40A VCE = 0.65 BV

CES

VGE = 15V RG = 2.2Ω L = 200µH Test Circuit (Figure 20)

-27- ns

-20- ns

- 185 225 ns

-5595ns

- 400 - µJ

- 1220 1400 µJ

- 700 800 µJ

- - 0.2

NOTES:

2. Turn-OffEnergy Loss (E

) isdeﬁned as the integral ofthe instantaneous power loss starting at thetrailing edge of the inputpulse and ending

OFF

at the point where thecollector current equals zero (ICE= 0A). All deviceswere tested per JEDEC Standard No.24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values fortwo Turn-On loss conditions are shown forthe convenience of the circuit designer. E

is the turn-on loss of the IGBTonly. E

ON1

the turn-on loss whena typical diode is used in thetest circuit and the diode is atthe same TJas the IGBT. The diode type is specifiedin Figure 20.

Typical Performance Curves Unless Otherwise Speciﬁed

C/W

ON2

PACKAGE LIMITED

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

VGE= 15V

FIGURE 1. DC COLLECTORCURRENT vs CASE

TEMPERATURE

225

TJ= 150oC, RG = 2.2Ω, VGE= 15V, L = 100µH

200 175

150 125

100

75 50

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

700

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