Intersil Corporation HGTG34N100E2 Datasheet
HGTG34N100E2
April 1995
Features
• 34A, 1000V
• Latch Free Operation
• Typical Fall Time - 710ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG34N100E2 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25
The IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PART NUMBER PACKAGE BRAND
HGTG34N100E2 TO-247 G34N100E2
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA9895.
o
C and +150oC.
PACKAGING AVAILABILITY
34A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
COLLECTOR
GATE
C
E
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector-Gate Voltage, RGE =1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
at VGE = 15V, at TC = +90oC . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 200A at 0.8 BV
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE(PEAK)
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
= 600V, TC = +125oC, RGE = 25Ω.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
| Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
at VGE= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . t
3-124
CES
CGR
C25
C90
CM
GES
GEM
STG
SC
SC
HGTG34N100E2 UNITS
1000 V
1000 V
55 A
34 A
200 A
±20 V
±30 V
CES
D
L
208 W
-55 to +150
260
3 µs
10 µs
File Number 2827.3
-
o
C
o
C
Specifications HGTG34N100E2
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
CES
CES
CE(SAT)
GE(TH)
GES
GEP
G(ON)
LIMITS
UNITSMIN TYP MAX
IC = 250µA, VGE = 0V 1000 - - V
VCE = BV
CES
VCE = 0.8 BV
IC = I
,
C90
TC = +25oC - - 1.0 mA
CESTC
= +125oC - - 4.0 mA
TC = +25oC - 2.8 3.2 V
VGE = 15V
TC = +125oC - 2.8 3.1 V
IC = I
C90
,
TC = +25oC - 2.9 3.3 V
VGE = 10V
TC = +125oC - 3.0 3.4 V
IC = 1mA,
VCE = V
GE
TC = +25oC 3.0 4.5 6.0 V
VGE = ±20V - - ±500 nA
IC = I
, VCE = 0.5 BV
C90
IC = I
,
C90
VCE = 0.5 BV
CES
VGE = 15V - 185 240 nC
CES
- 7.3 - V
VGE = 20V - 240 315 nC
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-Off Energy (Note 1) W
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off t
Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R
NOTE: 1. Turn-Off Energy Loss (W
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A) The HGTG34N100E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total T urn-Of f Energy Loss.
D(ON)I
RI
D(OFF)I
FI
OFF
D(ON)I
RI
D(OFF)I
FI
OFF
θJC
L = 50µH, IC = I
, RG = 25Ω,
C90
VGE = 15V, TJ = +125oC,
VCE = 0.8 BV
L = 50µH, IC = I
CES
C90
, RG = 25Ω,
VGE = 10V, TJ = +125oC,
VCE = 0.8 BV
CES
- 100 - ns
- 150 - ns
- 610 795 ns
- 710 925 ns
- 7.1 - mJ
- 100 - ns
- 150 - ns
- 460 600 ns
- 670 870 ns
- 6.5 - mJ
- 0.5 0.6
o
C/W
3-125
Loading...