Intersil Corporation HGTG32N60E2 Datasheet

HGTG32N60E2

April 1995

Features

• 32A, 600V

• Latch Free Operation

• Typical Fall Time - 600ns

• High Input Impedance

• Low Conduction Loss

Description

The IGBT is a MOS gated high voltage switching device combin­ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25
and +150

IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are essen­tial, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.

This device incorporates generation two design techniques
which yield improved peak current capability and larger short cir­cuit withstand capability than previous designs.

NOTE: When ordering, use the entire part number.

o

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PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTG32N60E2 TO-247 G32N60E2

Package

COLLECTOR

(BOTTOM SIDE

METAL)

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C

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

32A, 600V N-Channel IGBT

JEDEC STYLE TO-247

EMITTER

COLLECTOR

GATE

C

G

E

Absolute Maximum Ratings T

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

at VGE = 15V, at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 200A at 0.8 BV

Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2)at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . t

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

CE(PEAK)

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

= 360V, TC = +125oC, RGE = 25Ω.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

| Copyright © Intersil Corporation 1999

= +25oC, Unless Otherwise Specified

C

at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . t

3-120

CES

CGR

C25
C90

CM

GES

GEM

STG

SC
SC

HGTG32N60E2 UNITS

600 V
600 V

50 A
32 A

200 A

±20 V
±30 V

CES

D

L

208 W

-55 to +150
260

3 µs

15 µs

File Number 2828.3

-

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Specifications HGTG32N60E2

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

PARAMETERS SYMBOL TEST CONDITIONS

Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Voltage I

Collector-Emitter Saturation Voltage V

Gate-Emitter Threshold Voltage V

Gate-Emitter Leakage Current I
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t

CES

CES

CE(SAT)

GE(TH)

GES

GEP

G(ON)

D(ON)I

RI

D(OFF)I

LIMITS

UNITSMIN TYP MAX

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

CES

VCE = 0.8 BV
IC = I

,

C90

TC = +25oC - - 250 µA

CESTC

= +125oC - - 4.0 mA

TC = +25oC - 2.4 2.9 V

VGE = 15V

TC = +125oC - 2.4 3.0 V

IC = 1mA,
VCE = V

GE

TC = +25oC 3.0 4.5 6.0 V

VGE = ±20V - - ±500 nA
IC = I

, VCE = 0.5 BV

C90

IC = I

,

C90

VCE = 0.5 BV

CES

L = 500µH, IC = I

CES

VGE = 15V - 200 260 nC
VGE = 20V - 265 345 nC
, RG = 25Ω,

C90

- 6.5 - V

- 100 - ns

VGE = 15V, TJ = +125oC,
VCE = 0.8 BV

CES

- 150 - ns

- 630 820 ns

Current Fall Time t
Turn-Off Energy (Note 1) W
Thermal Resistance R

FI

OFF

θJC

- 620 800 ns

- 3.5 - mJ

- 0.5 0.6

NOTE:

1. Turn-Off Energy Loss (W

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A) The HGTG32N60E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves

100

PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V

80

60

= +150oC

T

40

20

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

0246810

C

TC = +25oC

TC = -40oC

, GATE-TO-EMITTER VOLTAGE (V)

V

GE

CE

= 15V

FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)

PULSE DURATION = 250µs DUTY CYCLE < 0.5%, T

100

90
80
70
60
50
40
30
20
10

, COLLECTOR-EMITTER CURRENT (A)

CE

0

I

0246810

= 15V VGE = 10V

V

GE

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

C

VGE = 8.0V

VGE = 7.5V

VGE = 7.0V

VGE = 6.5V
VGE = 6.0V

VGE = 5.5V

o

C/W

= +25oC

3-121