Intersil Corporation HGTG30N60C3D Datasheet
HGTG30N60C3D
Data Sheet January 2000
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150oC. The
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
TA49053.
The IGBTis ideal formany high voltageswitching applications
operating at moderate frequencies where low conduction
losses are essential.
Formerly Developmental Type TA49014.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG30N60C3D TO-247 G30N60C3D
NOTE: When ordering, use the entire part number.
File Number 4041.2
Features
• 63A, 600V at TC = 25oC
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
E
C
G
= 150oC
J
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 2000
HGTG30N60C3D
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
HGTG30N60C3D UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
C25
C110
CM
GES
GEM
63 A
30 A
25 A
252 A
±20 V
±30 V
Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
208 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
STG
L
SC
SC
-40 to 150
260
4 µs
15 µs
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
Electrical Specifications T
= 360V, TJ = 125oC, RG= 25Ω.
CE(PK)
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
ECS
CES
CE(SAT)IC
GE(TH)
GES
Switching SOA SSOA TJ = 150oC,
IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE = 0V 15 25 - V
VCE = BV
VCE = BV
= I
C110
VGE = 15V
IC = 250µA,
VCE = V
GE
CES
CES
,
TC = 25oC - - 250 µA
TC = 150oC - - 3.0 mA
TC = 25oC - 1.5 1.8 V
TC = 150oC - 1.7 2.0 V
TC = 25oC 3.0 5.2 6.0 V
VGE = ±20V - - ±100 nA
VGE= 15V,
RG = 3Ω,
V
V
= 480V 200 - - A
CE(PK)
= 600V 60 - - A
CE(PK)
L = 100µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
GEP
G(ON)
rI
fI
ON
OFF
EC
IC = I
IC = I
VCE = 0.5 BV
TJ = 150oC,
ICE = I
V
CE(PK)
VGE = 15V,
, VCE = 0.5 BV
C110
,
C110
C110,
= 0.8 BV
CES
- 8.1 - V
VGE = 15V - 162 180 nC
CES
VGE = 20V - 216 250 nC
-40-ns
CES,
-45-ns
- 320 400 ns
RG= 3Ω,
L = 100µH
- 230 275 ns
- 1050 - µJ
- 2500 - µJ
IEC = 30A - 1.75 2.2 V
2
HGTG30N60C3D
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Diode Reverse Recovery Time t
rr
IEC= 30A, dIEC/dt = 100A/µs - 52 60 ns
IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns
Thermal Resistance R
θJC
IGBT - - 0.6
Diode - - 1.3
NOTE:
3. Turn-OffEnergy Loss (E
) is defined as the integral of the instantaneouspower loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss.This test method produces the truetotalTurn-Off Energy Loss. Turn-On losses include
diode losses.
Typical Performance Curves
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
125
100
TC = 150oC
75
= 25oC
T
C
50
T
= -40oC
C
25
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
4681012
VGE, GATE TO EMITTER VOLTAGE (V)
CE
= 10V
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
150
VGE = 15.0V
125
100
75
50
25
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
0246810
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
12.0V
7.0V
o
o
= 25oC
C
10.0V
9.5V
9.0V
8.5V
8.0V
7.5V
C/W
C/W
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
125
100
75
50
25
, COLLECTOR TO EMITTER CURRENT (A)
CE
0
I
012345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
GE
= 10V
TC = -40oC
TC = 25oC
TC = 150oC
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
125
V
= 15V
GE
100
75
50
25
, COLLECTOR TO EMITTER CURRENT (A)
0
CE
I
012345
TC = -40oC
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC = 150oC
TC = 25oC
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3
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