Intersil Corporation HGTG30N60C3 Datasheet

HGTG30N60C3

Data Sheet January 2000

63A, 600V, UFS Series N-Channel IGBT

The HGTG30N60C3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49051.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60C3 TO-247 G30N60C3

NOTE: When ordering, use the entire part number.

File Number 4042.2

Features

• 63A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

= 150oC

J

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG30N60C3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG30N60C3 UNITS

Collector To Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate To Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate To Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

63 A
30 A

252 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

208 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-40 to 150
260

4 µs

15 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 25Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector To Emitter Breakdown Voltage BV
Emitter To Collector Breakdown Voltage BV
Collector To Emitter Leakage Current I

CollectorTo Emitter Saturation Voltage V

CE(SAT)IC

CESIC
ECSIC

CES

= 250µA, VGE = 0V 600 - - V

= 10mA, VGE = 0V 15 25 - V
VCE = BV
VCE = BV

= I

C110

CES
CES

, VGE = 15V TC = 25oC - 1.5 1.8 V

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

TC = 150oC - 1.7 2.0 V
Gate To Emitter Threshold Voltage V
Gate To Emitter Leakage Current I

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC,

= 250µA, VCE = V

GE

TC = 25oC 3.0 5.2 6.0 V

VGE = ±20V - - ±100 nA

RG = 3Ω,
VGE = 15V,

V

V

= 480V 200 - - A

CE(PK)

= 600V 60 - - A

CE(PK)

L = 100µH
Gate To Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)ITJ

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R

GEPIC

G(ON)IC

rI

fI

ON

OFF

θJC

= I

, VCE = 0.5 BV

C110

= I

,

C110

VCE = 0.5 BV

= 150oC,

ICE = I

C110,

V

= 0.8 BV

CE(PK)

VGE = 15V,

RG= 3Ω,

L = 100µH

CES

CES,

CES

- 8.1 - V
VGE = 15V - 162 180 nC
VGE = 20V - 216 250 nC

-40- ns

-45- ns

- 320 400 ns

- 230 275 ns

- 1050 - µJ

- 2500 - µJ

- - 0.6

o

C/W

NOTE:

3. Turn-OffEnergyLoss(E

) isdefinedasthe integral of the instantaneous power lossstartingatthe trailing edge of the input pulseandending

OFF

at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3 was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total turn-off energy loss. Turn-On losses include
diode losses.

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