Intersil Corporation HGTG30N60B3D Datasheet

HGTG30N60B3D

Data Sheet January 2000

60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. This device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC. The
IGBT used is the development type TA49170. The diode
used in anti-parallel with the IGBT is the development type
TA49053.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49172.

Ordering Information

File Number 4446.2

Features

• 60A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

E

C

G

= 150oC

J

PART NUMBER PACKAGE BRAND

HGTG30N60B3D TO-247 G30N60B3D

NOTE: When ordering, use the entire part number.

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Symbol

C

G

E

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG30N60B3D

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG30N60B3D UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

EC(AVG)

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

60 A
30 A
25 A

220 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

208 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L
SC
SC

-55 to 150
260

4 µs

10 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG= 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

CESIC

CES

= 250µA, VGE = 0V 600 - - V

VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC--3mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA TJ = 150oC, RG = 3Ω,

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)IC

d(ON)I

rI

d(OFF)I

fI

ON

OFF

= I

,

C110

VGE = 15V

= 250µA, VCE = V

TC = 25oC - 1.45 1.9 V
TC = 150oC - 1.7 2.1 V

GE

356 V

VGE = ±20V - - ±250 nA

V

VGE = 15V L = 100µH

IC = I

VCE = 0.5 BV

= I

C110
C110

, VCE = 0.5 BV
,

CES

V

CES

VGE = 15V - 170 190 nC
VGE = 20V - 230 250 nC

IGBT and Diode at TJ = 25oC,
ICE = I
VCE = 0.8 BV

C110

,

,

CES

VGE = 15V,

= 480V 200 - - A

CE (PK)

= 600V 60 - - A

CE (PK)

- 7.2 - V

-36- ns

-25- ns

- 137 - ns

RG= 3Ω,
L = 1mH,
Test Circuit (Figure 19)

-58- ns

- 550 800 µJ

- 680 900 µJ

2

HGTG30N60B3D

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

rI

fI

ON

OFF

EC

rr

IGBT and Diode at TJ = 150oC,
ICE = I
VCE = 0.8 BV

C110

,

,

CES

VGE = 15V,

-32- ns

-24- ns

- 275 320 ns

RG= 3Ω,
L = 1mH,
Test Circuit (Figure 19)

- 90 150 ns

- 1300 1550 µJ

- 1600 1900 µJ

IEC = 30A - 1.95 2.5 V
IEC = 1A, dIEC/dt = 200A/µs - 32 40 ns
IEC = 30A, dIEC/dt = 200A/µs - 45 55 ns

Thermal Resistance Junction To Case R

θJC

IGBT - - 0.6
Diode - - 1.3

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

o
o

C/W
C/W

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

GE

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

= 15V

225

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 100µH

200
175
150
125
100

75
50
25

0

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

700

3