Intersil Corporation HGTG30N60B3 Datasheet

HGTG30N60B3

Data Sheet January 2000

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49170.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60B3 TO-247 G30N60B3

NOTE: When ordering, use the entire part number.

File Number 4444.2

Features

• 60A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

= 150oC

J

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG30N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG30N60B3 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

60 A
30 A

220 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

208 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ARV
STG

L
SC
SC

100 mJ

-55 to 150
260

4 µs

10 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 15 28 - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 3.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC,

= I

,

C110

VGE = 15V

IC = 250µA, VCE = V

TC = 25oC - 1.45 1.9 V
TC = 150oC - 1.7 2.1 V

GE

4.5 5.0 6.0 V

VGE = ±20V - - ±250 nA

RG = 3Ω,
VGE = 15V

V
V

= 480V 200 - - A

CE (PK)

= 600V 60 - - A

CE (PK)

L = 100µH,
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI
ON1
ON2
OFF

IC = I
IC = I

VCE = 0.5 BV

, VCE = 0.5 BV

C110

,

C110

CES

VGE = 15V - 170 190 nC

CES

VGE = 20V - 230 250 nC

IGBT and Diode at TJ = 25oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 17)

- 7.2 - V

-36- ns

-25- ns

- 137 - ns

-58- ns

- 500 - µJ

- 550 800 µJ

- 680 900 µJ

2

HGTG30N60B3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V
RG= 3Ω
L = 1mH
Test Circuit (Figure 17)

-32- ns

-24- ns

- 275 320 ns

- 90 150 ns

- 500 - µJ

- 1300 1550 µJ

- 1600 1900 µJ

- - 0.6

NOTES:

3. Turn-OffEnergyLoss(E

) isdefinedasthe integral of the instantaneous power lossstartingatthe trailing edge of the input pulseandending

OFF

at the point where thecollectorcurrentequalszero(ICE= 0A). All devices weretestedperJEDECStandardNo.24-1Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.

Typical Performance Curves Unless Otherwise Specified

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

GE

= 15V

225

TJ= 150oC, RG = 3Ω, VGE= 15V, L =100µH

200
175
150
125
100

75
50
25

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

200

100 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

o

C/W

ON2

700

100

10

f

= 0.05 / (t

MAX1

1

f

= (PD- PC) / (E

MAX2

PC = CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

f

0.1

(DUTY FACTOR = 50%)

= 0.6oC/W, SEE NOTES

R

ØJC

5

I

d(OFF)I

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ= 150oC, RG = 3Ω, L = 1mH,

T

OFF

)

)

C

o

75

o

75
110oC
110oC

C
C

+ t

ON2

d(ON)I

+ E

VCE= 480V

V

GE

15V
10V
15V
10V

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

3

20

VCE = 360V, RG = 3Ω, TJ = 125oC

18 450

16

14

12

10

8

, SHORT CIRCUIT WITHSTAND TIME (µs)

6

6020 40

SC

t

10 11 12 13 14 15

, GATE TO EMITTER VOLTAGE (V)

V

GE

I

SC

t

SC

500

400

350

300

250

200

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

150

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME