Intersil Corporation HGTG30N60A4 Datasheet

HGTG30N60A4

Data Sheet January 2000

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49343.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60A4 TO-247 G30N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

File Number 4829

Features

• >100kHz Operation at 390V, 30A

• 200kHz Operation at 390V, 18A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at T

• Low Conduction Loss

• Temperature Compensating SABER Model
www.intersil.com

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(FLANGE)

= 125oC

J

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

HGTG30N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG30N60A4 UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

75 A
60 A

240 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . .SSOA 150A at 600V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . P

D

463 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.7 W/oC

Operating and Storage Junction Temperature Range . . . . TJ, T

STG

-55 to 150

Maximum Lead Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

300

260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = 600V TJ = 25oC - - 250 µA

TJ = 125oC - - 4.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V

= 30A,

VGE = 15V

TJ = 25oC - 1.8 2.6 V

TJ = 125oC - 1.6 2.0 V
IC = 250µA, VCE = 600V 4.5 5.2 7.0 V
VGE = ±20V - - ±250 nA

150 - - A

L = 100µH, VCE= 600V

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

GEP

g(ON)

rI

fI
ON1
ON2
OFF

IC = 30A, VCE = 300V - 8.5 - V
IC = 30A,

VCE = 300V

IGBT and Diode at TJ = 25oC
ICE = 30A
VCE = 390V
VGE =15V
RG= 3Ω
L = 200µH
Test Circuit - (Figure 20)

VGE = 15V - 225 270 nC
VGE = 20V - 300 360 nC

-25- ns

-12- ns

- 150 - ns

-38- ns

- 280 - µJ

- 600 - µJ

- 240 350 µJ

2

HGTG30N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
ICE = 30A
VCE = 390V
VGE = 15V
RG= 3Ω
L = 200µH
Test Circuit - (Figure 20)

-24- ns

-11- ns

- 180 200 ns

-5870ns

- 280 - µJ

- 1000 1160 µJ

- 450 750 µJ

- - 0.27

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.

3. Turn-Off Energy Loss (E

) isdefinedasthe integral of the instantaneous power lossstartingatthe trailing edge of the input pulseandending

OFF

at the point where thecollectorcurrentequalszero(ICE= 0A). All devices weretestedperJEDECStandardNo.24-1Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

60

VGE= 15V

70
60

50
40

30

200

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 500µH

150

100

o

C/W

ON2

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

300

f

= 0.05 / (t

MAX1

= (PD- PC) / (E

f

MAX2

100

P

= CONDUCTION DISSIPATION

C

(DUTY FACTOR = 50%)

R

= 0.27oC/W, SEE NOTES

ØJC

, OPERATING FREQUENCY (kHz)

MAX

TJ= 125oC, RG = 3Ω, L = 200µH, VCE= 390V

f

30

3

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

)

T

C

o

75

C

FIGURE 3. OPERATING FREQUENCYvs COLLECTOR TO

EMITTER CURRENT

V

15V

GE

50

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

7000

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

18

16

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

t

6010 30

10 11 12 15

VCE = 390V, RG = 3Ω, TJ= 125oC

13 14

, GATE TO EMITTER VOLTAGE (V)

V

GE

I

SC

t

SC

900

800

700

600

500

400

300

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

200

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

3