Intersil Corporation HGTG30N120CN Datasheet

HGTG30N120CN

Data Sheet January 2000

75A, 1200V, NPT Series N-Channel IGBT

The HGTG30N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49281.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N120CN TO-247 G30N120CN

NOTE: When ordering, use the entire part number.

File Number 4483.3

Features

• 75A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.intersil.com

Packaging

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE

METAL)

= 150oC

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

SABER™ is a trademark of Analogy, Inc.

HGTG30N120CN

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

HGTG30N120CN UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

GES

GEM

75 A 40 A

240 A

±20 V ±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

500 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

STG

L SC SC

135 mJ

-55 to 150 260

8 µs

15 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. ICE = 30A, L = 400µH, TJ = 125oC.

3. V

= 960V, TJ = 125oC, RG = 3Ω.

CE(PK)

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV Emitter to Collector Breakdown Voltage BV Collector to Emitter Leakage Current I

CES ECS

CES

IC = 250µA, VGE = 0V 1200 - - V IC = 10mA, VGE= 0V 15 - - V VCE = BV

CES

TC = 25oC - - 250 µA TC = 125oC - 600 - µA TC = 150oC--8mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

= I

C110

VGE = 15V IC = 250µA, VCE = V

TC = 25oC - 2.1 2.4 V TC = 150oC - 2.9 3.5 V

VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

Gate to Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 4) E Turn-On Energy (Note 4) E Turn-Off Energy (Note 5) E

GEP

G(ON)

fI ON1 ON2 OFF

L = 200µH, V IC = I IC = I

, VCE = 0.5 BV

C110

VCE = 0.5 BV IGBT and Diode at TJ = 25oC

ICE = I

C110

VCE = 0.8 BV VGE = 15V RG= 3Ω L = 1mH Test Circuit (Figure 18)

CE(PK)

CES

= 1200V

CES

VGE = 15V - 260 325 nC VGE = 20V - 330 420 nC

6.0 6.6 - V

150 - - A

- 9.6 - V

-2430ns

-2126ns

- 220 260 ns

- 180 240 ns

- 2.2 - mJ

- 2.8 3.5 mJ

- 4.2 4.8 mJ

HGTG30N120CN

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t Turn-On Energy (Note 4) E Turn-On Energy (Note 4) E Turn-Off Energy (Note 5) E Thermal Resistance Junction To Case R

fI ON1 ON2 OFF

θJC

IGBT and Diode at TJ = 150oC ICE = I

C110

VCE = 0.8 BV

CES

VGE = 15V RG= 3Ω L = 1mH Test Circuit (Figure 18)

-2228ns

-2126ns

- 260 300 ns

- 350 400 ns

- 2.6 - mJ

- 5.6 7.0 mJ

- 6.6 7.5 mJ

- - 0.25

C/W

NOTES:

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.

5. Turn-OffEnergy Loss (EOFF) is defined as the integral of the instantaneous powerloss starting at the trailing edge of the input pulse andending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Speciﬁed

= 15V

200

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 200µH

160

, DC COLLECTOR CURRENT (A)

25 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

100

TJ= 150oC, RG = 3Ω, L = 1mH, VCE= 960V

MAX1

MAX2

= CONDUCTION DISSIPATION

, OPERATING FREQUENCY (kHz)

MAX

ØJC

= 0.05 / (t = (PD- PC) / (E

(DUTY FACTOR = 50%)

= 0.25oC/W, SEE NOTES

, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

+ t

ON2

d(ON)I

+ E

OFF

)

75oC 12V

110 110oC

15V

15V 12V

120

, COLLECTOR TO EMITTER CURRENT (A)

, COLLECTOR TO EMITTER VOLTAGE (V)

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

50 500

VCE = 960V, RG = 3Ω, TJ= 125oC

, SHORT CIRCUIT WITHST AND TIME (µs)

6020

11 12 13 14 15 16

, GATE TO EMITTER VOLTAGE (V)

400

300

200

100

, PEAK SHORT CIRCUIT CURRENT (A)

FIGURE 3. OPERATINGFREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

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