Intersil Corporation HGTG27N120BN Datasheet

HGTG27N120BN

Data Sheet January 2000

72A, 1200V, NPT Series N-Channel IGBT

The HGTG27N120BN is a Non-Punch Through (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on­state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49280.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG27N120BN TO-247 G27N120BN

NOTE: When ordering, use the entire part number.

File Number 4482.3

Features

• 72A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.intersil.com

• Avalanche Rated

Packaging

JEDEC STYLE TO-247

E

C

G

= 150oC

J

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

SABER™ is a trademark of Analogy, Inc.

HGTG27N120BN

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG27N120BN UNITS

Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

C25

C110

CM

GES

GEM

72 A
34 A

216 A

±20 V
±30 V

Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

500 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

AV

STG

L
SC
SC

135 mJ

-55 to 150
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by Max junction temperature.

2. ICE = 30A, L = 400µH, TJ = 125oC

3. V

= 960V, TJ = 125oC, RG = 3Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, VGE= 0V 15 - - V
VCE = BV

= I

C110

CES

,

VGE = 15V
IC = 250µA, VCE = V

TC = 25oC - - 250 µA

= 125oC - 300 - µA

T

C

= 150oC--4mA

T

C

TC = 25oC - 2.45 2.7 V

= 150oC - 3.8 4.2 V

T

C

GE

6 6.6 - V

VGE = ±20V - - ±250 nA

= 150oC, RG = 3Ω, VGE = 15V,

J

L = 200µH, V
IC = I
IC = I

, VCE = 0.5 BV

C110

,

C110

VCE = 0.5 BV

CE(PK)

CES

= 1200V

CES

VGE = 15V - 270 325 nC

= 20V - 350 420 nC

V

GE

IGBT and Diode at TJ = 25oC,
ICE = I
VCE = 0.8 BV

C110

,

,

CES

VGE = 15V,
RG = 3Ω,
L = 1mH,
Test Circuit (Figure 18)

150 - - A

- 9.2 - V

-2430ns

-2025ns

- 195 240 ns

- 80 120 ns

- 2.2 - mJ

- 2.7 3.3 mJ

- 2.3 2.8 mJ

2

HGTG27N120BN

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC,
ICE = I
VCE = 0.8 BV

C110

,

,

CES

VGE = 15V,
RG = 3Ω,
L = 1mH,
Test Circuit (Figure 18)

-2228ns

-2025ns

- 220 280 ns

- 140 200 ns

- 2.7 - mJ

- 5.1 6.5 mJ

- 3.4 4.2 mJ

- - 0.25

NOTES:

4. Turn-OffEnergy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss of the IGBT only. E

ON1

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.

Typical Performance Curves Unless Otherwise Specified

80

70

60

50

V

= 15V

GE

200

TJ= 150oC, RG = 3Ω, VGE= 15V, L = 200µH

160

120

o

C/W

ON2

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

TJ= 150oC, RG = 3Ω, L = 1mH, VCE= 960V

T

V

C

GE

+ t

d(ON)I

+ E

75

75

OFF

o

15V

C

o

12V

C

)

)

T

V

C

GE

o

15V

C

110

12V

110oC

100

50

10

f

MAX1

f

MAX2

= CONDUCTION DISSIPATION

P

C

, OPERATING FREQUENCY (kHz)

MAX

R

f

ØJC

1

5

= 0.05 / (t
= (PD- PC) / (E

(DUTY FACTOR = 50%)

= 0.25oC/W, SEE NOTES

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

ON2

10

80

40

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

50

VCE = 960V, RG = 3Ω, TJ= 125oC

40

30

20

10

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

0

t

6020

11 12 13 14 15 16

VGE, GATE TO EMITTER VOLTAGE (V)

500

I

SC

400

300

200

t

SC

100

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

0

FIGURE 3. OPERATINGFREQUENCY vs COLLECTORTO

EMITTER CURRENT

3

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME